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Artigo de periodico
Trimming Si surfaces for molecular electronics (2007)
Caldas, Marilia Junqueira ; Calzolari, A; Cucinotta, C S
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
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ABNT
CALDAS, Marilia Junqueira e CALZOLARI, A e CUCINOTTA, C S. Trimming Si surfaces for molecular electronics. Journal of Applied Physics, v. 101, n. 8, p. 081719/1-081719/5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2723176. Acesso em: 08 nov. 2025.
APA
Caldas, M. J., Calzolari, A., & Cucinotta, C. S. (2007). Trimming Si surfaces for molecular electronics. Journal of Applied Physics, 101( 8), 081719/1-081719/5. doi:10.1063/1.2723176
NLM
Caldas MJ, Calzolari A, Cucinotta CS. Trimming Si surfaces for molecular electronics [Internet]. Journal of Applied Physics. 2007 ; 101( 8): 081719/1-081719/5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2723176
Vancouver
Caldas MJ, Calzolari A, Cucinotta CS. Trimming Si surfaces for molecular electronics [Internet]. Journal of Applied Physics. 2007 ; 101( 8): 081719/1-081719/5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2723176
Artigo de periodico
Impedance spectroscopy of an electrolytic cell limited by ohmic electrodes (2007)
Barbero, Giovanni; Batalioto, F; Figueiredo Neto, Antonio Martins
Source: Journal of Applied Physics. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, CRISTAIS LÍQUIDOS, ÍONS
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ABNT
BARBERO, Giovanni e BATALIOTO, F e FIGUEIREDO NETO, Antonio Martins. Impedance spectroscopy of an electrolytic cell limited by ohmic electrodes. Journal of Applied Physics, v. 101, n. 5, p. 054102/1-054102/5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2709531. Acesso em: 08 nov. 2025.
APA
Barbero, G., Batalioto, F., & Figueiredo Neto, A. M. (2007). Impedance spectroscopy of an electrolytic cell limited by ohmic electrodes. Journal of Applied Physics, 101( 5), 054102/1-054102/5. doi:10.1063/1.2709531
NLM
Barbero G, Batalioto F, Figueiredo Neto AM. Impedance spectroscopy of an electrolytic cell limited by ohmic electrodes [Internet]. Journal of Applied Physics. 2007 ; 101( 5): 054102/1-054102/5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2709531
Vancouver
Barbero G, Batalioto F, Figueiredo Neto AM. Impedance spectroscopy of an electrolytic cell limited by ohmic electrodes [Internet]. Journal of Applied Physics. 2007 ; 101( 5): 054102/1-054102/5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2709531
Artigo de periodico
Optical characterization of urethane/urea elastomers undoped and doped with magnetic nanoparticles subjected to a uniaxial strain (2007)
Sena, C; Godinho, M H; Figueiredo Neto, Antonio Martins
Source: Journal of Applied Physics. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, NANOPARTÍCULAS
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ABNT
SENA, C e GODINHO, M H e FIGUEIREDO NETO, Antonio Martins. Optical characterization of urethane/urea elastomers undoped and doped with magnetic nanoparticles subjected to a uniaxial strain. Journal of Applied Physics, v. 102, n. 7, p. 073524/1-073524/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2786921. Acesso em: 08 nov. 2025.
APA
Sena, C., Godinho, M. H., & Figueiredo Neto, A. M. (2007). Optical characterization of urethane/urea elastomers undoped and doped with magnetic nanoparticles subjected to a uniaxial strain. Journal of Applied Physics, 102( 7), 073524/1-073524/6. doi:10.1063/1.2786921
NLM
Sena C, Godinho MH, Figueiredo Neto AM. Optical characterization of urethane/urea elastomers undoped and doped with magnetic nanoparticles subjected to a uniaxial strain [Internet]. Journal of Applied Physics. 2007 ; 102( 7): 073524/1-073524/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2786921
Vancouver
Sena C, Godinho MH, Figueiredo Neto AM. Optical characterization of urethane/urea elastomers undoped and doped with magnetic nanoparticles subjected to a uniaxial strain [Internet]. Journal of Applied Physics. 2007 ; 102( 7): 073524/1-073524/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2786921
Artigo de periodico
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA
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ABNT
MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389336. Acesso em: 08 nov. 2025.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1389336
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1389336
Artigo de periodico
Nitrogen in germanium (1998)
Chambouleyron, I; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, MATÉRIA CONDENSADA
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ABNT
CHAMBOULEYRON, I e ZANATTA, Antonio Ricardo. Nitrogen in germanium. Journal of Applied Physics, v. 84, n. 1, p. 1-30, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.368612. Acesso em: 08 nov. 2025.
APA
Chambouleyron, I., & Zanatta, A. R. (1998). Nitrogen in germanium. Journal of Applied Physics, 84( 1), 1-30. doi:10.1063/1.368612
NLM
Chambouleyron I, Zanatta AR. Nitrogen in germanium [Internet]. Journal of Applied Physics. 1998 ; 84( 1): 1-30.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.368612
Vancouver
Chambouleyron I, Zanatta AR. Nitrogen in germanium [Internet]. Journal of Applied Physics. 1998 ; 84( 1): 1-30.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.368612
Artigo de periodico
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering (1997)
Silva, S W da; Lubyshev, D I; Basmaji, Pierre; Pusep, Yuri A ; Pizani, Paulo Sérgio; Galzerani, J C; Katiyar, R S; Morell, G
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, SEMICONDUTORES
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ABNT
SILVA, S W da et al. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, v. 82, n. 12, p. 6247-6250, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366511. Acesso em: 08 nov. 2025.
APA
Silva, S. W. da, Lubyshev, D. I., Basmaji, P., Pusep, Y. A., Pizani, P. S., Galzerani, J. C., et al. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, 82( 12), 6247-6250. doi:10.1063/1.366511
NLM
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.366511
Vancouver
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.366511

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