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Artigo de periodico
Bound photoinduced giant spin polaron in EuTe (2022)
Henriques, André Bohomoletz ; Kooten, Sjoerd Van ; Abramof, Eduardo ; Rappl, P.H.O. ; Galgano, Giovanni Decot
Source: Journal of Applied Physics. Unidade: IF
Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES (FÍSICO-QUÍMICA), FOTOLUMINESCÊNCIA, ESPECTROSCOPIA DA LUZ, SPIN, POLARIZAÇÃO, MÉTODO DE MONTE CARLO
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ABNT
HENRIQUES, André Bohomoletz et al. Bound photoinduced giant spin polaron in EuTe. Journal of Applied Physics, v. 131, n. 4, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0079384. Acesso em: 08 nov. 2025.
APA
Henriques, A. B., Kooten, S. V., Abramof, E., Rappl, P. H. O., & Galgano, G. D. (2022). Bound photoinduced giant spin polaron in EuTe. Journal of Applied Physics, 131( 4). doi:10.1063/5.0079384
NLM
Henriques AB, Kooten SV, Abramof E, Rappl PHO, Galgano GD. Bound photoinduced giant spin polaron in EuTe [Internet]. Journal of Applied Physics. 2022 ; 131( 4):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0079384
Vancouver
Henriques AB, Kooten SV, Abramof E, Rappl PHO, Galgano GD. Bound photoinduced giant spin polaron in EuTe [Internet]. Journal of Applied Physics. 2022 ; 131( 4):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0079384
Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 08 nov. 2025.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A ; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 08 nov. 2025.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 08 nov. 2025.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses (2015)
Santos, J. F. M.; Terra, I. A. A.; Astrath, N. G. C.; Guimarães, F. B.; Baesso, M. L.; Nunes, Luiz Antônio de Oliveira ; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, ENERGIA, ALUMÍNIO
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SANTOS, J. F. M. et al. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, v. 117, n. 5, p. 053102-1-053102-8, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4906781. Acesso em: 08 nov. 2025.
APA
Santos, J. F. M., Terra, I. A. A., Astrath, N. G. C., Guimarães, F. B., Baesso, M. L., Nunes, L. A. de O., & Catunda, T. (2015). Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, 117( 5), 053102-1-053102-8. doi:10.1063/1.4906781
NLM
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4906781
Vancouver
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4906781
Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Junior, Euclydes ; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 08 nov. 2025.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS
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SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 08 nov. 2025.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains (2014)
Kondratenko, S. V.; Vakulenko, O. V.; Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Ware, M. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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ABNT
KONDRATENKO, S. V. et al. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, v. No 2014, n. 19, p. 193707-1-193707-11, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4902311. Acesso em: 08 nov. 2025.
APA
Kondratenko, S. V., Vakulenko, O. V., Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., et al. (2014). Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, No 2014( 19), 193707-1-193707-11. doi:10.1063/1.4902311
NLM
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4902311
Vancouver
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4902311
Artigo de periodico
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Caface, R. A.; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 08 nov. 2025.
APA
Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
NLM
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4792301
Vancouver
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4792301
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
PUSEP, Yuri A et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4803494
Artigo de periodico
Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well (2012)
Santos, L. Fernandes dos; Pusep, Yuri A ; Bakarov, A. K.; Toropov, A. I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
SANTOS, L. Fernandes dos et al. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well. Journal of Applied Physics, v. 111, n. 12, p. 123523-1-123523-6, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4730769. Acesso em: 08 nov. 2025.
APA
Santos, L. F. dos, Pusep, Y. A., Bakarov, A. K., & Toropov, A. I. (2012). Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well. Journal of Applied Physics, 111( 12), 123523-1-123523-6. doi:10.1063/1.4730769
NLM
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well [Internet]. Journal of Applied Physics. 2012 ; 111( 12): 123523-1-123523-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4730769
Vancouver
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well [Internet]. Journal of Applied Physics. 2012 ; 111( 12): 123523-1-123523-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4730769
Artigo de periodico
Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures (2012)
Mazur, Yu. I.; Dorogan, V. G.; Ware, M. E.; Marega Junior, Euclydes ; Lytvyn, P. M.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, POLARIZAÇÃO
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ABNT
MAZUR, Yu. I. et al. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, v. 112, n. 8, p. 084314-1-084314-7, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4759318. Acesso em: 08 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Lytvyn, P. M., Zhuchenko, Z. Y., et al. (2012). Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, 112( 8), 084314-1-084314-7. doi:10.1063/1.4759318
NLM
Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4759318
Vancouver
Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4759318
Artigo de periodico
Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices (2011)
Pusep, Yuri A ; Gold, A.; Mamani, N. C.; Godoy, M. P. F.; Gobato, Y. Galvão; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
NLM
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3646365
Vancouver
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3646365
Artigo de periodico
Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation (2011)
Gracia, Lourdes; Longo, Valéria M.; Cavalcante, Laécio S.; Beltrán, Armando; Avansi, Waldir; Siu Li, Máximo ; Mastelaro, Valmor Roberto ; Varela, José A.; Longo, Elson; Andrés, Juan
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, FOTOLUMINESCÊNCIA, CRESCIMENTO DE CRISTAIS
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GRACIA, Lourdes et al. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, v. 110, n. 4, p. 043501-1-043501-11, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3615948. Acesso em: 08 nov. 2025.
APA
Gracia, L., Longo, V. M., Cavalcante, L. S., Beltrán, A., Avansi, W., Siu Li, M., et al. (2011). Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, 110( 4), 043501-1-043501-11. doi:10.1063/1.3615948
NLM
Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3615948
Vancouver
Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3615948
Artigo de periodico
Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers (2011)
Therézio, Eralci M.; Piovesan, Erick; Anni, Marco; Silva, R. A.; Oliveira Junior, Osvaldo Novais de ; Marletta, Alexandre
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, ENERGIA (TRANSFERÊNCIA)
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ABNT
THERÉZIO, Eralci M. et al. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers. Journal of Applied Physics, v. 110, n. 4, p. 044504-1-044504-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3622143. Acesso em: 08 nov. 2025.
APA
Therézio, E. M., Piovesan, E., Anni, M., Silva, R. A., Oliveira Junior, O. N. de, & Marletta, A. (2011). Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers. Journal of Applied Physics, 110( 4), 044504-1-044504-6. doi:10.1063/1.3622143
NLM
Therézio EM, Piovesan E, Anni M, Silva RA, Oliveira Junior ON de, Marletta A. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 044504-1-044504-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3622143
Vancouver
Therézio EM, Piovesan E, Anni M, Silva RA, Oliveira Junior ON de, Marletta A. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 044504-1-044504-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3622143
Artigo de periodico
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters (2010)
Borrero-González, L. J.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Wojcik, J.; Mascher, P.; Pusep, Yuri A ; Comedi, D.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)
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ABNT
BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 08 nov. 2025.
APA
Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900
NLM
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3457900
Vancouver
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3457900
Artigo de periodico
Structural and optical analysis of GaAsP/GaP core-shell nanowires (2009)
Mohseni, P. K.; Rodrigues, A. D.; Galzerani, J. C.; Pusep, Yuri A ; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
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ABNT
MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 08 nov. 2025.
APA
Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
NLM
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3269724
Vancouver
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3269724
Artigo de periodico
The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' (2009)
Milanez, Juliana; Figueiredo, Alberthmeiry T.; Lázaro, Sérgio; Longo, Valéria M.; Erlo, Rafael; Mastelaro, Valmor Roberto ; Franco, Roberto W. A.; Longo, Elson; Varela, José A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, RESSONÂNCIA PARAMAGNÉTICA DE SPIN, FILMES FINOS, MECÂNICA QUÂNTICA, ENERGIA, DENSIDADE
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ABNT
MILANEZ, Juliana et al. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3'. Journal of Applied Physics, v. 106, n. 4, p. 043526-1-043526-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3190524. Acesso em: 08 nov. 2025.
APA
Milanez, J., Figueiredo, A. T., Lázaro, S., Longo, V. M., Erlo, R., Mastelaro, V. R., et al. (2009). The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3'. Journal of Applied Physics, 106( 4), 043526-1-043526-7. doi:10.1063/1.3190524
NLM
Milanez J, Figueiredo AT, Lázaro S, Longo VM, Erlo R, Mastelaro VR, Franco RWA, Longo E, Varela JA. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' [Internet]. Journal of Applied Physics. 2009 ; 106( 4): 043526-1-043526-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3190524
Vancouver
Milanez J, Figueiredo AT, Lázaro S, Longo VM, Erlo R, Mastelaro VR, Franco RWA, Longo E, Varela JA. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' [Internet]. Journal of Applied Physics. 2009 ; 106( 4): 043526-1-043526-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3190524
Artigo de periodico
Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses (2009)
Santos, C. N.; Mohr, D.; Silva, W. F.; de Camargo, Andrea Simone Stucchi ; Eckert, Hellmut ; Siu Li, Máximo ; Vermelho, M. V. D.; Hernandes, Antônio Carlos ; Ibanez, A.; Jacinto, C.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FLUORESCÊNCIA, ÓPTICA (PROPRIEDADES TÉRMICAS), VIDRO, TERRAS RARAS, LASER
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ABNT
SANTOS, C. N. et al. Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses. Journal of Applied Physics, v. 106, n. 2, p. 023512-1-023512-6, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3176503. Acesso em: 08 nov. 2025.
APA
Santos, C. N., Mohr, D., Silva, W. F., de Camargo, A. S. S., Eckert, H., Siu Li, M., et al. (2009). Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses. Journal of Applied Physics, 106( 2), 023512-1-023512-6. doi:10.1063/1.3176503
NLM
Santos CN, Mohr D, Silva WF, de Camargo ASS, Eckert H, Siu Li M, Vermelho MVD, Hernandes AC, Ibanez A, Jacinto C. Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses [Internet]. Journal of Applied Physics. 2009 ; 106( 2): 023512-1-023512-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3176503
Vancouver
Santos CN, Mohr D, Silva WF, de Camargo ASS, Eckert H, Siu Li M, Vermelho MVD, Hernandes AC, Ibanez A, Jacinto C. Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses [Internet]. Journal of Applied Physics. 2009 ; 106( 2): 023512-1-023512-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3176503
Artigo de periodico
Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach (2008)
Longo, V. M.; Figueiredo, A. T.; Lázaro, S. de; Gurgel, M. F.; Costa, M. G. S.; Santos, C. O. Paiva; Varela, José Arana; Longo, Elson; Mastelaro, Valmor Roberto ; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos ; Franco, R. W. A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ÓPTICA (PROPRIEDADES), NANOTECNOLOGIA
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ABNT
LONGO, V. M. et al. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach. Journal of Applied Physics, v. 104, n. 2, p. 023515-1-023515-11, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2956741. Acesso em: 08 nov. 2025.
APA
Longo, V. M., Figueiredo, A. T., Lázaro, S. de, Gurgel, M. F., Costa, M. G. S., Santos, C. O. P., et al. (2008). Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach. Journal of Applied Physics, 104( 2), 023515-1-023515-11. doi:10.1063/1.2956741
NLM
Longo VM, Figueiredo AT, Lázaro S de, Gurgel MF, Costa MGS, Santos COP, Varela JA, Longo E, Mastelaro VR, De Vicente FS, Hernandes AC, Franco RWA. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach [Internet]. Journal of Applied Physics. 2008 ; 104( 2): 023515-1-023515-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2956741
Vancouver
Longo VM, Figueiredo AT, Lázaro S de, Gurgel MF, Costa MGS, Santos COP, Varela JA, Longo E, Mastelaro VR, De Vicente FS, Hernandes AC, Franco RWA. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach [Internet]. Journal of Applied Physics. 2008 ; 104( 2): 023515-1-023515-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2956741

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