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Artigo de periodico
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
Zanatta, Antonio Ricardo ; Ingram, D. C.; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4896589
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4896589
Artigo de periodico
Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, CRISTALIZAÇÃO, ESPECTROSCOPIA RAMAN, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 09 nov. 2025.
APA
Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457
NLM
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2955457
Vancouver
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2955457
Artigo de periodico
Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films (2007)
Zanatta, Antonio Ricardo ; Ferri, Fabio Aparecido
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO, EXPANSÃO DO CALOR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e FERRI, Fabio Aparecido. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, v. 102, n. 4, p. 043509-1-043509-5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2770823. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., & Ferri, F. A. (2007). Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, 102( 4), 043509-1-043509-5. doi:10.1063/1.2770823
NLM
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2770823
Vancouver
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2770823

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