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Filtros : "ESPALHAMENTO" "QUIVY, ALAIN ANDRE" Removido: "DIFRAÇÃO POR RAIOS X" Limpar

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  • Artigo de periodico

    Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems (2009)

    Freitas, R O; Quivy, A. A.; Morelhão, Sérgio Luiz

    Conference titles: Activity Report 2008: LNLS/Brazilian Synchrotron Light Laboratory. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, SISTEMA QUÂNTICO, ESPALHAMENTO

    Acesso à fonteHow to cite
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    • ABNT

      FREITAS, R O e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. 2009Tradução . . Disponível em: http://www.lnls.br/ar2008/web/index.html. Acesso em: 31 out. 2024.

    • APA

      Freitas, R. O., Quivy, A. A., & Morelhão, S. L. (2009). Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. Recuperado de http://www.lnls.br/ar2008/web/index.html

    • NLM

      Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2024 out. 31 ] Available from: http://www.lnls.br/ar2008/web/index.html

    • Vancouver

      Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2024 out. 31 ] Available from: http://www.lnls.br/ar2008/web/index.html

  • Artigo de periodico

    The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells (2008)

    Silva, M A T da; Morais, R R O; Dias, I F L; Lourenço, S A; Duarte, J L; Laureto, E; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: SEMICONDUTORES, ESPALHAMENTO

    PrivadoAcesso à fonteHow to cite
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    • ABNT

      SILVA, M A T da et al. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, v. 20, n. 25, p. 255246/1-255246/9, 2008Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d. Acesso em: 31 out. 2024.

    • APA

      Silva, M. A. T. da, Morais, R. R. O., Dias, I. F. L., Lourenço, S. A., Duarte, J. L., Laureto, E., et al. (2008). The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, 20( 25), 255246/1-255246/9. Recuperado de http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

    • NLM

      Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 out. 31 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

    • Vancouver

      Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 out. 31 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d
  • 1

1 - 2 (2 records)

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