Fano resonance in heavily doped porous silicon (2011)
Source: Journal of Raman Spectroscopy. Unidade: IFSC
Subjects: ESPALHAMENTO, LUMINESCÊNCIA, SILÍCIO, SEMICONDUTORES, NANOTECNOLOGIA
ABNT
PUSEP, Yuri A et al. Fano resonance in heavily doped porous silicon. Journal of Raman Spectroscopy, v. 42, n. 6, p. 1405-1407, 2011Tradução . . Disponível em: https://doi.org/10.1002/jrs.2870. Acesso em: 31 out. 2024.APA
Pusep, Y. A., Rodrigues, A. D., Borrero-González, L. J., Acquaroli, L. N., Urteaga, R., Arce, R. D., et al. (2011). Fano resonance in heavily doped porous silicon. Journal of Raman Spectroscopy, 42( 6), 1405-1407. doi:10.1002/jrs.2870NLM
Pusep YA, Rodrigues AD, Borrero-González LJ, Acquaroli LN, Urteaga R, Arce RD, Koropecki RR, Tirado M, Comedi D. Fano resonance in heavily doped porous silicon [Internet]. Journal of Raman Spectroscopy. 2011 ; 42( 6): 1405-1407.[citado 2024 out. 31 ] Available from: https://doi.org/10.1002/jrs.2870Vancouver
Pusep YA, Rodrigues AD, Borrero-González LJ, Acquaroli LN, Urteaga R, Arce RD, Koropecki RR, Tirado M, Comedi D. Fano resonance in heavily doped porous silicon [Internet]. Journal of Raman Spectroscopy. 2011 ; 42( 6): 1405-1407.[citado 2024 out. 31 ] Available from: https://doi.org/10.1002/jrs.2870