Filtros : "FAZZIO, ADALBERTO" "Current Topics on Semiconductor Physics" Removido: "SBF" Limpar

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  • Source: Current Topics on Semiconductor Physics. Unidade: IF

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    • ABNT

      SCOLFARO, L M R e FAZZIO, Adalberto. Role played by interstitial 3d transition - metal atoms in gaas. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 05 dez. 2025.
    • APA

      Scolfaro, L. M. R., & Fazzio, A. (1988). Role played by interstitial 3d transition - metal atoms in gaas. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
    • NLM

      Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
    • Vancouver

      Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
  • Source: Current Topics on Semiconductor Physics. Unidade: IF

    How to cite
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    • ABNT

      MAKIUCHI, N et al. Study of 4d and 5d impurities in gallium arsenide. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 05 dez. 2025.
    • APA

      Makiuchi, N., Macedo, T. C., Caldas, M. J., & Fazzio, A. (1988). Study of 4d and 5d impurities in gallium arsenide. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
    • NLM

      Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
    • Vancouver

      Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
  • Source: Current Topics on Semiconductor Physics. Unidade: IF

    How to cite
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    • ABNT

      MOTA, R. e FAZZIO, Adalberto. Charge state stability of transition metals in semiconductors: negative u. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 05 dez. 2025.
    • APA

      Mota, R., & Fazzio, A. (1988). Charge state stability of transition metals in semiconductors: negative u. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
    • NLM

      Mota R, Fazzio A. Charge state stability of transition metals in semiconductors: negative u. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
    • Vancouver

      Mota R, Fazzio A. Charge state stability of transition metals in semiconductors: negative u. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
  • Source: Current Topics on Semiconductor Physics. Unidade: IF

    How to cite
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    • ABNT

      ANTONELLI, A et al. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 05 dez. 2025.
    • APA

      Antonelli, A., Valle do Amaral, O. A., Canuto, S. R. A., & Fazzio, A. (1988). Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
    • NLM

      Antonelli A, Valle do Amaral OA, Canuto SRA, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]
    • Vancouver

      Antonelli A, Valle do Amaral OA, Canuto SRA, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2025 dez. 05 ]

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