Filtros : "Journal of Applied Physics" "Siu Li, Máximo" Removido: "IFSC444" Limpar

Filtros



Refine with date range


  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, FOTOLUMINESCÊNCIA, CRESCIMENTO DE CRISTAIS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      GRACIA, Lourdes et al. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, v. 110, n. 4, p. 043501-1-043501-11, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3615948. Acesso em: 18 nov. 2025.
    • APA

      Gracia, L., Longo, V. M., Cavalcante, L. S., Beltrán, A., Avansi, W., Siu Li, M., et al. (2011). Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, 110( 4), 043501-1-043501-11. doi:10.1063/1.3615948
    • NLM

      Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.3615948
    • Vancouver

      Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.3615948
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ÓPTICA (PROPRIEDADES), VIDRO, LITOGRAFIA (PROCESSOS DE IMPRESSÃO), FOTÔNICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      NALIN, M. et al. Two-dimensional photonic crystals in antimony-based films fabricated by holography. Journal of Applied Physics, v. 103, n. 10, p. 106101-1-106101-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2921603. Acesso em: 18 nov. 2025.
    • APA

      Nalin, M., Menezes, J. W., Cescato, L., Braga, E. S., Figueroa, H. H., Ribeiro, S. J. L., et al. (2008). Two-dimensional photonic crystals in antimony-based films fabricated by holography. Journal of Applied Physics, 103( 10), 106101-1-106101-3. doi:10.1063/1.2921603
    • NLM

      Nalin M, Menezes JW, Cescato L, Braga ES, Figueroa HH, Ribeiro SJL, Messaddeq Y, Siu Li M. Two-dimensional photonic crystals in antimony-based films fabricated by holography [Internet]. Journal of Applied Physics. 2008 ; 103( 10): 106101-1-106101-3.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.2921603
    • Vancouver

      Nalin M, Menezes JW, Cescato L, Braga ES, Figueroa HH, Ribeiro SJL, Messaddeq Y, Siu Li M. Two-dimensional photonic crystals in antimony-based films fabricated by holography [Internet]. Journal of Applied Physics. 2008 ; 103( 10): 106101-1-106101-3.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.2921603
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, ESPECTROSCOPIA RAMAN

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      RIBEIRO, C. T. M. e SIU LI, Máximo e ZANATTA, Antonio Ricardo. Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, v. 96, n. 2, p. 1068-1073, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1760843. Acesso em: 18 nov. 2025.
    • APA

      Ribeiro, C. T. M., Siu Li, M., & Zanatta, A. R. (2004). Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, 96( 2), 1068-1073. doi:10.1063/1.1760843
    • NLM

      Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.1760843
    • Vancouver

      Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.1760843
  • Source: Journal of Applied Physics. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      BERNUSSI, A A et al. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, v. 67, n. 9 , p. 4149-51, 1990Tradução . . Acesso em: 18 nov. 2025.
    • APA

      Bernussi, A. A., Iikawa, F., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, 67( 9 ), 4149-51.
    • NLM

      Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2025 nov. 18 ]
    • Vancouver

      Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2025 nov. 18 ]

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2025