On the photoconductivity of n-doped 'AL''GA''AS' around liquid 'HE' temperature (1993)
Fonte: Abstracts. Nome do evento: Brazilian School of Semiconductor Physics. Unidade: IFQSC
Assunto: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
ABNT
SCALVI, L V A et al. On the photoconductivity of n-doped 'AL''GA''AS' around liquid 'HE' temperature. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 16 set. 2024.APA
Scalvi, L. V. A., Siu Li, M., Minami, E., & Oliveira, L. (1993). On the photoconductivity of n-doped 'AL''GA''AS' around liquid 'HE' temperature. In Abstracts. Sao Carlos: Usp/Ufscar.NLM
Scalvi LVA, Siu Li M, Minami E, Oliveira L. On the photoconductivity of n-doped 'AL''GA''AS' around liquid 'HE' temperature. Abstracts. 1993 ;[citado 2024 set. 16 ]Vancouver
Scalvi LVA, Siu Li M, Minami E, Oliveira L. On the photoconductivity of n-doped 'AL''GA''AS' around liquid 'HE' temperature. Abstracts. 1993 ;[citado 2024 set. 16 ]