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Trabalho de evento
Structural, Optical and thermal properties of NSH crystals doped with manganese ions. (2013)
Remedios, C M R; Morelhão, Sérgio Luiz; Cardoso, L P
Conference titles: Reunião Anual de Usuários do LNLS/CNPEM. Unidade: IF
Subjects: ESPECTROSCOPIA RAMAN, DIFRAÇÃO POR RAIOS X, RADIAÇÃO SINCROTRON
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ABNT
REMEDIOS, C M R e MORELHÃO, Sérgio Luiz e CARDOSO, L P. Structural, Optical and thermal properties of NSH crystals doped with manganese ions. 2013, Anais.. Campinas: Instituto de Física, Universidade de São Paulo, 2013. Disponível em: http://lnls.cnpem.br/wp-content/uploads/2013/04/Livro-Resumos-23RAU.pdf. Acesso em: 18 out. 2024.
APA
Remedios, C. M. R., Morelhão, S. L., & Cardoso, L. P. (2013). Structural, Optical and thermal properties of NSH crystals doped with manganese ions. In . Campinas: Instituto de Física, Universidade de São Paulo. Recuperado de http://lnls.cnpem.br/wp-content/uploads/2013/04/Livro-Resumos-23RAU.pdf
NLM
Remedios CMR, Morelhão SL, Cardoso LP. Structural, Optical and thermal properties of NSH crystals doped with manganese ions. [Internet]. 2013 ;[citado 2024 out. 18 ] Available from: http://lnls.cnpem.br/wp-content/uploads/2013/04/Livro-Resumos-23RAU.pdf
Vancouver
Remedios CMR, Morelhão SL, Cardoso LP. Structural, Optical and thermal properties of NSH crystals doped with manganese ions. [Internet]. 2013 ;[citado 2024 out. 18 ] Available from: http://lnls.cnpem.br/wp-content/uploads/2013/04/Livro-Resumos-23RAU.pdf
Trabalho de evento-resumo
Synchrotron radiation X-ray multiple diffraction in the study of KDP phase transition induced by electric field (2000)
Santos, A O dos; Gelamo, R V; Cardoso, L P; Miranda, M A R; Nogueira, M A M; Remedios, C M R; Melo, F. E. A.; Sasaki, J M; Avanci, Luis Humberto; Morelhao, Sergio Luiz
Source: Resumos. Conference titles: Congresso Brasileiro de Engenharia e Ciência dos Materiais. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SANTOS, A O dos et al. Synchrotron radiation X-ray multiple diffraction in the study of KDP phase transition induced by electric field. 2000, Anais.. São Carlos: UFSCAR, 2000. . Acesso em: 18 out. 2024.
APA
Santos, A. O. dos, Gelamo, R. V., Cardoso, L. P., Miranda, M. A. R., Nogueira, M. A. M., Remedios, C. M. R., et al. (2000). Synchrotron radiation X-ray multiple diffraction in the study of KDP phase transition induced by electric field. In Resumos. São Carlos: UFSCAR.
NLM
Santos AO dos, Gelamo RV, Cardoso LP, Miranda MAR, Nogueira MAM, Remedios CMR, Melo FEA, Sasaki JM, Avanci LH, Morelhao SL. Synchrotron radiation X-ray multiple diffraction in the study of KDP phase transition induced by electric field. Resumos. 2000 ;[citado 2024 out. 18 ]
Vancouver
Santos AO dos, Gelamo RV, Cardoso LP, Miranda MAR, Nogueira MAM, Remedios CMR, Melo FEA, Sasaki JM, Avanci LH, Morelhao SL. Synchrotron radiation X-ray multiple diffraction in the study of KDP phase transition induced by electric field. Resumos. 2000 ;[citado 2024 out. 18 ]
Trabalho de evento-anais periodico
Mapping of Bragg-surface diffraction of InP/GaAs (100) structure (1998)
Avanci, L H; Hayashi, M A; Cardoso, L P; Morelhão, Sérgio Luiz; Riesz, F; Rakennus, K; Hakkarainen, T
Source: Journal Crystal Growth. Conference titles: International Conference on Chemical Beam Epitaxy and Related Growth Techniques. Unidade: IF
Assunto: CRISTALOGRAFIA
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ABNT
AVANCI, L H et al. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. Amsterdam: North-Holland. . Acesso em: 18 out. 2024. , 1998
APA
Avanci, L. H., Hayashi, M. A., Cardoso, L. P., Morelhão, S. L., Riesz, F., Rakennus, K., & Hakkarainen, T. (1998). Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. Amsterdam: North-Holland.
NLM
Avanci LH, Hayashi MA, Cardoso LP, Morelhão SL, Riesz F, Rakennus K, Hakkarainen T. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. 1998 ; 188( 1-4): 220-224.[citado 2024 out. 18 ]
Vancouver
Avanci LH, Hayashi MA, Cardoso LP, Morelhão SL, Riesz F, Rakennus K, Hakkarainen T. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. 1998 ; 188( 1-4): 220-224.[citado 2024 out. 18 ]
Artigo de periodico
Observation of coherent hybrid reflection with synchrotron radiation (1998)
Morelhão, S L; Avanci, L H; Hayashi, M A; Cardoso, L P; Collins, S P
Source: Applied Physics Letters. Unidade: IF
Assunto: FÍSICA
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ABNT
MORELHÃO, S L et al. Observation of coherent hybrid reflection with synchrotron radiation. Applied Physics Letters, v. 73, n. 15, p. 2194-2196, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.122420. Acesso em: 18 out. 2024.
APA
Morelhão, S. L., Avanci, L. H., Hayashi, M. A., Cardoso, L. P., & Collins, S. P. (1998). Observation of coherent hybrid reflection with synchrotron radiation. Applied Physics Letters, 73( 15), 2194-2196. doi:10.1063/1.122420
NLM
Morelhão SL, Avanci LH, Hayashi MA, Cardoso LP, Collins SP. Observation of coherent hybrid reflection with synchrotron radiation [Internet]. Applied Physics Letters. 1998 ; 73( 15): 2194-2196.[citado 2024 out. 18 ] Available from: https://doi.org/10.1063/1.122420
Vancouver
Morelhão SL, Avanci LH, Hayashi MA, Cardoso LP, Collins SP. Observation of coherent hybrid reflection with synchrotron radiation [Internet]. Applied Physics Letters. 1998 ; 73( 15): 2194-2196.[citado 2024 out. 18 ] Available from: https://doi.org/10.1063/1.122420
Artigo de periodico
Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors (1997)
Hayashi, M A; Morelhão, Sérgio Luiz; Avanci, L H; Cardoso, L P; Sasaki, J M; Kretly, L C; Chang, S L
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HAYASHI, M A et al. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors. Applied Physics Letters, v. 71, n. 18, p. 2614-2616. 1997, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.120157. Acesso em: 18 out. 2024.
APA
Hayashi, M. A., Morelhão, S. L., Avanci, L. H., Cardoso, L. P., Sasaki, J. M., Kretly, L. C., & Chang, S. L. (1997). Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors. Applied Physics Letters, 71( 18), 2614-2616. 1997. doi:10.1063/1.120157
NLM
Hayashi MA, Morelhão SL, Avanci LH, Cardoso LP, Sasaki JM, Kretly LC, Chang SL. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors [Internet]. Applied Physics Letters. 1997 ; 71( 18): 2614-2616. 1997.[citado 2024 out. 18 ] Available from: https://doi.org/10.1063/1.120157
Vancouver
Hayashi MA, Morelhão SL, Avanci LH, Cardoso LP, Sasaki JM, Kretly LC, Chang SL. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors [Internet]. Applied Physics Letters. 1997 ; 71( 18): 2614-2616. 1997.[citado 2024 out. 18 ] Available from: https://doi.org/10.1063/1.120157

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