Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
ABNT
BULLA, Douglas Anderson Pereira e MORIMOTO, Nilton Itiro. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 18 out. 2024.APA
Bulla, D. A. P., & Morimoto, N. I. (1997). Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI.NLM
Bulla DAP, Morimoto NI. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom). Proceedings. 1997 ;[citado 2024 out. 18 ]Vancouver
Bulla DAP, Morimoto NI. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom). Proceedings. 1997 ;[citado 2024 out. 18 ]