ReP USP - Resultado da busca

Artigo de periodico
Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations (2002)
Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Furthmuller, J; Bechstedt, F
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA DOS SÓLIDOS, MUDANÇA DE FASE, ESTRUTURA ELETRÔNICA
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ABNT
TELES, L. K. et al. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, v. 92, n. 12, p. 7109-7113, 2002Tradução . . Acesso em: 08 nov. 2025.
APA
Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmuller, J., & Bechstedt, F. (2002). Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, 92( 12), 7109-7113.
NLM
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2025 nov. 08 ]
Vancouver
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2025 nov. 08 ]
Artigo de periodico
Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4" (2002)
Paduan-Filho, A.; Becerra, Carlos Castilla
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MAGNETISMO, MAGNETISMO
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ABNT
PADUAN-FILHO, A. e BECERRA, Carlos Castilla. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics, v. 91, n. 10, p. 8249-8250, 2002Tradução . . Acesso em: 08 nov. 2025.
APA
Paduan-Filho, A., & Becerra, C. C. (2002). Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics, 91( 10), 8249-8250.
NLM
Paduan-Filho A, Becerra CC. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics. 2002 ; 91( 10): 8249-8250.[citado 2025 nov. 08 ]
Vancouver
Paduan-Filho A, Becerra CC. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics. 2002 ; 91( 10): 8249-8250.[citado 2025 nov. 08 ]
Artigo de periodico
Optical constants and thickness determination of very thin amorphous semiconductor films (2002)
Chambouleyron, Ivan Emílio; Ventura, S. D.; Birgin, Ernesto Julian Goldberg ; Martínez, José Mário
Source: Journal of Applied Physics. Unidade: IME
Subjects: ALGORITMOS, SEMICONDUTORES, DIELÉTRICOS
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ABNT
CHAMBOULEYRON, Ivan Emílio et al. Optical constants and thickness determination of very thin amorphous semiconductor films. Journal of Applied Physics, v. 92, n. 6, p. 3093-3102, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1500785. Acesso em: 08 nov. 2025.
APA
Chambouleyron, I. E., Ventura, S. D., Birgin, E. J. G., & Martínez, J. M. (2002). Optical constants and thickness determination of very thin amorphous semiconductor films. Journal of Applied Physics, 92( 6), 3093-3102. doi:10.1063/1.1500785
NLM
Chambouleyron IE, Ventura SD, Birgin EJG, Martínez JM. Optical constants and thickness determination of very thin amorphous semiconductor films [Internet]. Journal of Applied Physics. 2002 ; 92( 6): 3093-3102.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1500785
Vancouver
Chambouleyron IE, Ventura SD, Birgin EJG, Martínez JM. Optical constants and thickness determination of very thin amorphous semiconductor films [Internet]. Journal of Applied Physics. 2002 ; 92( 6): 3093-3102.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1500785
Artigo de periodico-carta/editorial
Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)] (2002)
Zanatta, Antonio Ricardo ; Ribeiro, C T M; Alvarez, F
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, FÍSICA DA MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C T M e ALVAREZ, F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. New York: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 08 nov. 2025. , 2002
APA
Zanatta, A. R., Ribeiro, C. T. M., & Alvarez, F. (2002). Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. New York: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Zanatta AR, Ribeiro CTM, Alvarez F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. 2002 ;92( 10): 6349-6350.[citado 2025 nov. 08 ]
Vancouver
Zanatta AR, Ribeiro CTM, Alvarez F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. 2002 ;92( 10): 6349-6350.[citado 2025 nov. 08 ]
Artigo de periodico
Laser interference structuring of a-Ge films on GaAs (2002)
Santos, P V; Zanatta, Antonio Ricardo ; Jahn, U; Trampert, A; Dondeo, F; Chambouleyron, Ivan
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR
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ABNT
SANTOS, P V et al. Laser interference structuring of a-Ge films on GaAs. Journal of Applied Physics, v. 91, n. 5, p. 2916-2920, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1448674. Acesso em: 08 nov. 2025.
APA
Santos, P. V., Zanatta, A. R., Jahn, U., Trampert, A., Dondeo, F., & Chambouleyron, I. (2002). Laser interference structuring of a-Ge films on GaAs. Journal of Applied Physics, 91( 5), 2916-2920. doi:10.1063/1.1448674
NLM
Santos PV, Zanatta AR, Jahn U, Trampert A, Dondeo F, Chambouleyron I. Laser interference structuring of a-Ge films on GaAs [Internet]. Journal of Applied Physics. 2002 ;91( 5): 2916-2920.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1448674
Vancouver
Santos PV, Zanatta AR, Jahn U, Trampert A, Dondeo F, Chambouleyron I. Laser interference structuring of a-Ge films on GaAs [Internet]. Journal of Applied Physics. 2002 ;91( 5): 2916-2920.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1448674
Artigo de periodico
Mossbauer spectroscopy and magnetoresistiviry of Fe-57 substituted Mn in 'La IND.0.7-x''y IND.0.3''MnO IND.31 (2002)
Goya, Gerardo Fabían; Souza, J A; Jardim, Renato de Figueiredo
Source: Journal of Applied Physics. Unidade: IF
Assunto: ESPECTROSCOPIA DO MOSSBAUER
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ABNT
GOYA, Gerardo Fabían e SOUZA, J A e JARDIM, Renato de Figueiredo. Mossbauer spectroscopy and magnetoresistiviry of Fe-57 substituted Mn in 'La IND.0.7-x''y IND.0.3''MnO IND.31. Journal of Applied Physics, v. 91, n. 10, p. 7932-7934, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/serviet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000010007932000001&idtype=cvips. Acesso em: 08 nov. 2025.
APA
Goya, G. F., Souza, J. A., & Jardim, R. de F. (2002). Mossbauer spectroscopy and magnetoresistiviry of Fe-57 substituted Mn in 'La IND.0.7-x''y IND.0.3''MnO IND.31. Journal of Applied Physics, 91( 10), 7932-7934. Recuperado de http://ojps.aip.org/getpdf/serviet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000010007932000001&idtype=cvips
NLM
Goya GF, Souza JA, Jardim R de F. Mossbauer spectroscopy and magnetoresistiviry of Fe-57 substituted Mn in 'La IND.0.7-x''y IND.0.3''MnO IND.31 [Internet]. Journal of Applied Physics. 2002 ; 91( 10): 7932-7934.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/serviet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000010007932000001&idtype=cvips
Vancouver
Goya GF, Souza JA, Jardim R de F. Mossbauer spectroscopy and magnetoresistiviry of Fe-57 substituted Mn in 'La IND.0.7-x''y IND.0.3''MnO IND.31 [Internet]. Journal of Applied Physics. 2002 ; 91( 10): 7932-7934.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/serviet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000010007932000001&idtype=cvips
Artigo de periodico
Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics (2002)
Shapira, Y; Bindilatti, Valdir
Source: Journal of Applied Physics. Unidade: IF
Subjects: MAGNETISMO, SEMICONDUTORES, MUDANÇA DE FASE
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ABNT
SHAPIRA, Y e BINDILATTI, Valdir. Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics. Journal of Applied Physics, v. 92, n. 8, p. 4155-4185, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1507808. Acesso em: 08 nov. 2025.
APA
Shapira, Y., & Bindilatti, V. (2002). Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics. Journal of Applied Physics, 92( 8), 4155-4185. doi:10.1063/1.1507808
NLM
Shapira Y, Bindilatti V. Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics [Internet]. Journal of Applied Physics. 2002 ; 92( 8): 4155-4185.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1507808
Vancouver
Shapira Y, Bindilatti V. Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics [Internet]. Journal of Applied Physics. 2002 ; 92( 8): 4155-4185.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1507808
Artigo de periodico
Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation (2002)
Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS (PROPRIEDADES ELÉTRICAS), ESTRUTURA ELETRÔNICA
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ABNT
ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, v. 91, n. 9, p. 5892-5895, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips. Acesso em: 08 nov. 2025.
APA
Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2002). Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, 91( 9), 5892-5895. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
NLM
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Vancouver
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A ; Silva, M T O; Fernandez, J R L; Chitta, Valmir Antonio ; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Artigo de periodico
Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder (2002)
Pusep, Yuri A ; Chiquito, Adenilson José; Mergulhao, S; Toropov, A I
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder. Journal of Applied Physics, v. 92, n. 7, p. 3830-3834, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1506002. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Chiquito, A. J., Mergulhao, S., & Toropov, A. I. (2002). Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder. Journal of Applied Physics, 92( 7), 3830-3834. doi:10.1063/1.1506002
NLM
Pusep YA, Chiquito AJ, Mergulhao S, Toropov AI. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder [Internet]. Journal of Applied Physics. 2002 ;92( 7): 3830-3834.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1506002
Vancouver
Pusep YA, Chiquito AJ, Mergulhao S, Toropov AI. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder [Internet]. Journal of Applied Physics. 2002 ;92( 7): 3830-3834.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1506002

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