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Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 08 nov. 2025.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A ; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 08 nov. 2025.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 08 nov. 2025.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)
Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
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ABNT
BARBOSA, B. G. et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, v. 115, p. 114312-1-114312-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4869218. Acesso em: 08 nov. 2025.
APA
Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218
NLM
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4869218
Vancouver
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4869218
Artigo de periodico
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Caface, R. A.; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 08 nov. 2025.
APA
Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
NLM
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4792301
Vancouver
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4792301
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
PUSEP, Yuri A et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4803494
Artigo de periodico
Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well (2012)
Santos, L. Fernandes dos; Pusep, Yuri A ; Bakarov, A. K.; Toropov, A. I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
SANTOS, L. Fernandes dos et al. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well. Journal of Applied Physics, v. 111, n. 12, p. 123523-1-123523-6, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4730769. Acesso em: 08 nov. 2025.
APA
Santos, L. F. dos, Pusep, Y. A., Bakarov, A. K., & Toropov, A. I. (2012). Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well. Journal of Applied Physics, 111( 12), 123523-1-123523-6. doi:10.1063/1.4730769
NLM
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well [Internet]. Journal of Applied Physics. 2012 ; 111( 12): 123523-1-123523-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4730769
Vancouver
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well [Internet]. Journal of Applied Physics. 2012 ; 111( 12): 123523-1-123523-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4730769
Artigo de periodico
Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices (2011)
Pusep, Yuri A ; Gold, A.; Mamani, N. C.; Godoy, M. P. F.; Gobato, Y. Galvão; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
NLM
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3646365
Vancouver
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3646365
Artigo de periodico
Magnetotransport in a wide parabolic well superimposed with a superlattice (2011)
Pusep, Yuri A ; Gusev, Guennadii Michailovich ; Bakarov, A. K.; Toropov, A. I.; Portal, J. C.
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, EFEITO HALL, SEMICONDUTORES (SISTEMAS), FÍSICA DA MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Magnetotransport in a wide parabolic well superimposed with a superlattice. Journal of Applied Physics, v. 109, n. 10, p. 102403-1-102403-3, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3576134. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Gusev, G. M., Bakarov, A. K., Toropov, A. I., & Portal, J. C. (2011). Magnetotransport in a wide parabolic well superimposed with a superlattice. Journal of Applied Physics, 109( 10), 102403-1-102403-3. doi:10.1063/1.3576134
NLM
Pusep YA, Gusev GM, Bakarov AK, Toropov AI, Portal JC. Magnetotransport in a wide parabolic well superimposed with a superlattice [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 102403-1-102403-3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3576134
Vancouver
Pusep YA, Gusev GM, Bakarov AK, Toropov AI, Portal JC. Magnetotransport in a wide parabolic well superimposed with a superlattice [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 102403-1-102403-3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3576134
Artigo de periodico
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters (2010)
Borrero-González, L. J.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Wojcik, J.; Mascher, P.; Pusep, Yuri A ; Comedi, D.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)
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ABNT
BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 08 nov. 2025.
APA
Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900
NLM
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3457900
Vancouver
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3457900
Artigo de periodico
Structural and optical analysis of GaAsP/GaP core-shell nanowires (2009)
Mohseni, P. K.; Rodrigues, A. D.; Galzerani, J. C.; Pusep, Yuri A ; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
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ABNT
MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 08 nov. 2025.
APA
Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
NLM
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3269724
Vancouver
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3269724
Artigo de periodico
Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: EFEITO HALL, POÇOS QUÂNTICOS (ESTRUTURA), SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 104, p. 063702-1-063702-6, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2007.09.036. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers. Journal of Applied Physics, 104, 063702-1-063702-6. doi:10.1016/j.physe.2007.09.036
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2008 ; 104 063702-1-063702-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1016/j.physe.2007.09.036
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2008 ; 104 063702-1-063702-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1016/j.physe.2007.09.036
Artigo de periodico
High resolution x-ray diffraction analysis of InGaAs/InP superlattices (2006)
Cornet, D. M.; LaPierre, R. R.; Comedi, D.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA, SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
CORNET, D. M. et al. High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, v. 100, n. 4, p. 043518-1-043518-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335689. Acesso em: 08 nov. 2025.
APA
Cornet, D. M., LaPierre, R. R., Comedi, D., & Pusep, Y. A. (2006). High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, 100( 4), 043518-1-043518-6. doi:10.1063/1.2335689
NLM
Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2335689
Vancouver
Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2335689
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A ; Silva, M T O; Fernandez, J R L; Chitta, Valmir Antonio ; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2025 nov. 08 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Artigo de periodico
Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder (2002)
Pusep, Yuri A ; Chiquito, Adenilson José; Mergulhao, S; Toropov, A I
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder. Journal of Applied Physics, v. 92, n. 7, p. 3830-3834, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1506002. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Chiquito, A. J., Mergulhao, S., & Toropov, A. I. (2002). Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder. Journal of Applied Physics, 92( 7), 3830-3834. doi:10.1063/1.1506002
NLM
Pusep YA, Chiquito AJ, Mergulhao S, Toropov AI. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder [Internet]. Journal of Applied Physics. 2002 ;92( 7): 3830-3834.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1506002
Vancouver
Pusep YA, Chiquito AJ, Mergulhao S, Toropov AI. Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder [Internet]. Journal of Applied Physics. 2002 ;92( 7): 3830-3834.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1506002

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