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Artigo de periodico
Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers (2024)
Huang, T.-Y. ; Borrely, T ; Yang, Y.-C. ; Alzeidan, A. ; Jacobsen, G. M. ; Teodoro, M. D. ; Quivy, Alain André ; Goldman, R. S.
Source: Applied Physics Letters. Unidade: IF
Subjects: POÇOS QUÂNTICOS, CÉLULAS SOLARES, FOTOLUMINESCÊNCIA, LASER DO ESTADO SÓLIDO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANG, T.-Y. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, v. 125, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0219815. Acesso em: 04 nov. 2025.
APA
Huang, T. -Y., Borrely, T., Yang, Y. -C., Alzeidan, A., Jacobsen, G. M., Teodoro, M. D., et al. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, 125. doi:10.1063/5.0219815
NLM
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815
Vancouver
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815
Artigo de periodico
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition (2006)
Szafraniec, J; Tsao, S; Zhang, W; Lim, H; Taguchi, M; Quivy, A. A.; Movaghar, B; Razeghi, M
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SZAFRANIEC, J et al. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, v. 88, n. 12, p. 121102/1-121102/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2188056. Acesso em: 04 nov. 2025.
APA
Szafraniec, J., Tsao, S., Zhang, W., Lim, H., Taguchi, M., Quivy, A. A., et al. (2006). High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, 88( 12), 121102/1-121102/3. doi:10.1063/1.2188056
NLM
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2188056
Vancouver
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2188056
Artigo de periodico
InAs/GaAs quantum dots optically active at 1.5 'mu' (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T E; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA DOS MATERIAIS, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, v. 82, n. 16, p. 2646-2648, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1569053. Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, 82( 16), 2646-2648. doi:10.1063/1.1569053
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1569053
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1569053
Artigo de periodico
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 04 nov. 2025.
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1513182
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1513182

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