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Artigo de periodico
Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) (2005)
Miwa, R H; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, v. 86, p. 213111, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1931027. Acesso em: 04 nov. 2025.
APA
Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, 86, 213111. doi:10.1063/1.1931027
NLM
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1931027
Vancouver
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1931027
Artigo de periodico
Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110) (2002)
Miotto, R; Ferraz, A. C.
Source: Applied Physics Letters. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, MICROSCOPIA ELETRÔNICA DE VARREDURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIOTTO, R e FERRAZ, A. C. Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110). Applied Physics Letters, v. 81, n. 3, p. 481-483, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1494456. Acesso em: 04 nov. 2025.
APA
Miotto, R., & Ferraz, A. C. (2002). Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110). Applied Physics Letters, 81( 3), 481-483. doi:10.1063/1.1494456
NLM
Miotto R, Ferraz AC. Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110) [Internet]. Applied Physics Letters. 2002 ; 81( 3): 481-483.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1494456
Vancouver
Miotto R, Ferraz AC. Zn-induced features at the GaAs(110) surface and its importance in the growth of ZnSe on GaAs(110) [Internet]. Applied Physics Letters. 2002 ; 81( 3): 481-483.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1494456
Artigo de periodico
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 04 nov. 2025.
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1513182
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1513182

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