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Artigo de periodico
Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)
Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 04 nov. 2025.
APA
Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331
NLM
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Vancouver
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Artigo de periodico
Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers (2024)
Huang, T.-Y. ; Borrely, T ; Yang, Y.-C. ; Alzeidan, A. ; Jacobsen, G. M. ; Teodoro, M. D. ; Quivy, Alain André ; Goldman, R. S.
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: POÇOS QUÂNTICOS, CÉLULAS SOLARES, FOTOLUMINESCÊNCIA, LASER DO ESTADO SÓLIDO
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ABNT
HUANG, T.-Y. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, v. 125, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0219815. Acesso em: 04 nov. 2025.
APA
Huang, T. -Y., Borrely, T., Yang, Y. -C., Alzeidan, A., Jacobsen, G. M., Teodoro, M. D., et al. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, 125. doi:10.1063/5.0219815
NLM
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815
Vancouver
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815
Artigo de periodico
Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene (2014)
Shakouri, Kh.; Vasilopoulos, P.; Vargiamidis, V.; Hai, Guo-Qiang ; Peeters, F. M.
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: SPINTRÔNICA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SHAKOURI, Kh. et al. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, v. 104, n. 21, p. 213109-1-213109-4, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4878509. Acesso em: 04 nov. 2025.
APA
Shakouri, K., Vasilopoulos, P., Vargiamidis, V., Hai, G. -Q., & Peeters, F. M. (2014). Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, 104( 21), 213109-1-213109-4. doi:10.1063/1.4878509
NLM
Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4878509
Vancouver
Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4878509
Artigo de periodico
Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures (2011)
Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: ÓPTICA (PROPRIEDADES), FILMES FINOS, POÇOS QUÂNTICOS, ÁTOMOS (COMPORTAMENTO ESTRUTURAL)
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ABNT
MAZUR, Yu. I. et al. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures. Applied Physics Letters, v. 98, n. 8, p. 083118-1-083118-3, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3560063. Acesso em: 04 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., Zhuchenko, Z. Y., Tarasov, G. G., et al. (2011). Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures. Applied Physics Letters, 98( 8), 083118-1-083118-3. doi:10.1063/1.3560063
NLM
Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures [Internet]. Applied Physics Letters. 2011 ; 98( 8): 083118-1-083118-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3560063
Vancouver
Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures [Internet]. Applied Physics Letters. 2011 ; 98( 8): 083118-1-083118-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3560063
Artigo de periodico
Atomic scale characterization of Mn doped InAs/GaAs quantum dots (2010)
Bozkurt, M.; Grant, V. A.; Ulloa, J. M.; Campion, R. P.; Foxon, C. T.; Marega Junior, Euclydes ; Salamo, G. J.; Koenraad, P. M.
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: ÓPTICA (PROPRIEDADES), FILMES FINOS, POÇOS QUÂNTICOS, ÁTOMOS (COMPORTAMENTO ESTRUTURAL)
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ABNT
BOZKURT, M. et al. Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Applied Physics Letters, v. 96, n. Ja 2010, p. 042108-1-042108-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3293296. Acesso em: 04 nov. 2025.
APA
Bozkurt, M., Grant, V. A., Ulloa, J. M., Campion, R. P., Foxon, C. T., Marega Junior, E., et al. (2010). Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Applied Physics Letters, 96( Ja 2010), 042108-1-042108-3. doi:10.1063/1.3293296
NLM
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega Junior E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots [Internet]. Applied Physics Letters. 2010 ; 96( Ja 2010): 042108-1-042108-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3293296
Vancouver
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega Junior E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots [Internet]. Applied Physics Letters. 2010 ; 96( Ja 2010): 042108-1-042108-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3293296
Artigo de periodico
A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential (2010)
Pusep, Yuri A ; Mohseni, P. K.; LaPierre, R. R.; Bakarov, A. K.; Toropov, A. I.
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)
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ABNT
PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
NLM
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Vancouver
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Artigo de periodico
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition (2006)
Szafraniec, J; Tsao, S; Zhang, W; Lim, H; Taguchi, M; Quivy, A. A.; Movaghar, B; Razeghi, M
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS
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ABNT
SZAFRANIEC, J et al. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, v. 88, n. 12, p. 121102/1-121102/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2188056. Acesso em: 04 nov. 2025.
APA
Szafraniec, J., Tsao, S., Zhang, W., Lim, H., Taguchi, M., Quivy, A. A., et al. (2006). High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, 88( 12), 121102/1-121102/3. doi:10.1063/1.2188056
NLM
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2188056
Vancouver
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2188056

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