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Artigo de periodico
Strain-induced topological transitions in epitaxial films of cadmium arsenide (2025)
Ahadi, Sina ; Huang, Victor ; Rashidi, Arman ; Munyan, Simon ; Smith, Michael; Quito, Victor Luiz ; Orth, Peter P. ; Martin, Ivar ; Stemmer, Susanne
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ESPECTROSCOPIA, FILMES FINOS, DIFRAÇÃO POR RAIOS X
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ABNT
AHADI, Sina et al. Strain-induced topological transitions in epitaxial films of cadmium arsenide. Applied Physics Letters, v. 127, n. 3, p. 033103-1-033103-5 + supplementary material, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0281482. Acesso em: 04 nov. 2025.
APA
Ahadi, S., Huang, V., Rashidi, A., Munyan, S., Smith, M., Quito, V. L., et al. (2025). Strain-induced topological transitions in epitaxial films of cadmium arsenide. Applied Physics Letters, 127( 3), 033103-1-033103-5 + supplementary material. doi:10.1063/5.0281482
NLM
Ahadi S, Huang V, Rashidi A, Munyan S, Smith M, Quito VL, Orth PP, Martin I, Stemmer S. Strain-induced topological transitions in epitaxial films of cadmium arsenide [Internet]. Applied Physics Letters. 2025 ; 127( 3): 033103-1-033103-5 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0281482
Vancouver
Ahadi S, Huang V, Rashidi A, Munyan S, Smith M, Quito VL, Orth PP, Martin I, Stemmer S. Strain-induced topological transitions in epitaxial films of cadmium arsenide [Internet]. Applied Physics Letters. 2025 ; 127( 3): 033103-1-033103-5 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0281482
Artigo de periodico
Low cost ion implantation technique (2012)
Salvadori, M C ; Teixeira, F S ; Sgubin, L G ; Araújo, W W R ; Spirin, R E; Oks, E M; Yu, K M; Brown, I G
Source: Applied Physics Letters. Unidade: IF
Assunto: FILMES FINOS
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ABNT
SALVADORI, M C et al. Low cost ion implantation technique. Applied Physics Letters, v. 101, n. 22, p. 224104/1-224104/4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4768699. Acesso em: 04 nov. 2025.
APA
Salvadori, M. C., Teixeira, F. S., Sgubin, L. G., Araújo, W. W. R., Spirin, R. E., Oks, E. M., et al. (2012). Low cost ion implantation technique. Applied Physics Letters, 101( 22), 224104/1-224104/4. doi:10.1063/1.4768699
NLM
Salvadori MC, Teixeira FS, Sgubin LG, Araújo WWR, Spirin RE, Oks EM, Yu KM, Brown IG. Low cost ion implantation technique [Internet]. Applied Physics Letters. 2012 ;101( 22): 224104/1-224104/4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4768699
Vancouver
Salvadori MC, Teixeira FS, Sgubin LG, Araújo WWR, Spirin RE, Oks EM, Yu KM, Brown IG. Low cost ion implantation technique [Internet]. Applied Physics Letters. 2012 ;101( 22): 224104/1-224104/4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4768699
Artigo de periodico
Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal (2012)
Kellermann, Guinther; Montoro, Luciano A; Giovanetti, Lisandro J; Claro, Paula C dos Santos; Zhang, Liang; Ramirez, Antonio J; Requejo, Félix G; Craievich, Aldo Felix
Source: Applied Physics Letters. Unidade: IF
Subjects: NANOPARTÍCULAS, FILMES FINOS
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ABNT
KELLERMANN, Guinther et al. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal. Applied Physics Letters, v. 100, n. 6, p. 063116/1-063116/5, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.3683493. Acesso em: 04 nov. 2025.
APA
Kellermann, G., Montoro, L. A., Giovanetti, L. J., Claro, P. C. dos S., Zhang, L., Ramirez, A. J., et al. (2012). Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal. Applied Physics Letters, 100( 6), 063116/1-063116/5. doi:10.1063/1.3683493
NLM
Kellermann G, Montoro LA, Giovanetti LJ, Claro PC dos S, Zhang L, Ramirez AJ, Requejo FG, Craievich AF. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal [Internet]. Applied Physics Letters. 2012 ; 100( 6): 063116/1-063116/5.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3683493
Vancouver
Kellermann G, Montoro LA, Giovanetti LJ, Claro PC dos S, Zhang L, Ramirez AJ, Requejo FG, Craievich AF. Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal [Internet]. Applied Physics Letters. 2012 ; 100( 6): 063116/1-063116/5.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3683493
Artigo de periodico
Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures (2011)
Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), FILMES FINOS, POÇOS QUÂNTICOS, ÁTOMOS (COMPORTAMENTO ESTRUTURAL)
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MAZUR, Yu. I. et al. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures. Applied Physics Letters, v. 98, n. 8, p. 083118-1-083118-3, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3560063. Acesso em: 04 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., Zhuchenko, Z. Y., Tarasov, G. G., et al. (2011). Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures. Applied Physics Letters, 98( 8), 083118-1-083118-3. doi:10.1063/1.3560063
NLM
Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures [Internet]. Applied Physics Letters. 2011 ; 98( 8): 083118-1-083118-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3560063
Vancouver
Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures [Internet]. Applied Physics Letters. 2011 ; 98( 8): 083118-1-083118-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3560063
Artigo de periodico
Atomic scale characterization of Mn doped InAs/GaAs quantum dots (2010)
Bozkurt, M.; Grant, V. A.; Ulloa, J. M.; Campion, R. P.; Foxon, C. T.; Marega Junior, Euclydes ; Salamo, G. J.; Koenraad, P. M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), FILMES FINOS, POÇOS QUÂNTICOS, ÁTOMOS (COMPORTAMENTO ESTRUTURAL)
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ABNT
BOZKURT, M. et al. Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Applied Physics Letters, v. 96, n. Ja 2010, p. 042108-1-042108-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3293296. Acesso em: 04 nov. 2025.
APA
Bozkurt, M., Grant, V. A., Ulloa, J. M., Campion, R. P., Foxon, C. T., Marega Junior, E., et al. (2010). Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Applied Physics Letters, 96( Ja 2010), 042108-1-042108-3. doi:10.1063/1.3293296
NLM
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega Junior E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots [Internet]. Applied Physics Letters. 2010 ; 96( Ja 2010): 042108-1-042108-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3293296
Vancouver
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega Junior E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots [Internet]. Applied Physics Letters. 2010 ; 96( Ja 2010): 042108-1-042108-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3293296
Artigo de periodico
Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer (2009)
Mendonça, Cleber Renato ; Correa, D. S.; Marlow, F.; Voss, T.; Tayalia, P.; Mazur, E.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POLÍMEROS (MATERIAIS), FILMES FINOS, FOTÔNICA, POLIMERIZAÇÃO
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ABNT
MENDONÇA, Cleber Renato et al. Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer. Applied Physics Letters, v. 95, n. 11, p. 113309-1-113309-3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3232207. Acesso em: 04 nov. 2025.
APA
Mendonça, C. R., Correa, D. S., Marlow, F., Voss, T., Tayalia, P., & Mazur, E. (2009). Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer. Applied Physics Letters, 95( 11), 113309-1-113309-3. doi:10.1063/1.3232207
NLM
Mendonça CR, Correa DS, Marlow F, Voss T, Tayalia P, Mazur E. Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer [Internet]. Applied Physics Letters. 2009 ; 95( 11): 113309-1-113309-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3232207
Vancouver
Mendonça CR, Correa DS, Marlow F, Voss T, Tayalia P, Mazur E. Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer [Internet]. Applied Physics Letters. 2009 ; 95( 11): 113309-1-113309-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3232207
Artigo de periodico
Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers (2008)
Rubinger, Carla Patricia Lacerda; Costa, L. C.; Macatrão, M.; Peres, M.; Monteiro, T.; Costa, F. M.; Franco, N.; Alves, E.; Saggioro, Bruno Zaniboni; Andreeta, Marcello Rubens Barsi ; Hernandes, Antônio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: TECNOLOGIA DE MICRO-ONDAS, LUMINESCÊNCIA, DIELÉTRICOS (PROPRIEDADES), LASER, FOTOLUMINESCÊNCIA, CERÂMICA, FILMES FINOS
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ABNT
RUBINGER, Carla Patricia Lacerda et al. Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters, v. 92, n. 25, p. 252904-1-252904-2, 2008Tradução . . Acesso em: 04 nov. 2025.
APA
Rubinger, C. P. L., Costa, L. C., Macatrão, M., Peres, M., Monteiro, T., Costa, F. M., et al. (2008). Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters, 92( 25), 252904-1-252904-2.
NLM
Rubinger CPL, Costa LC, Macatrão M, Peres M, Monteiro T, Costa FM, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters. 2008 ; 92( 25): 252904-1-252904-2.[citado 2025 nov. 04 ]
Vancouver
Rubinger CPL, Costa LC, Macatrão M, Peres M, Monteiro T, Costa FM, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters. 2008 ; 92( 25): 252904-1-252904-2.[citado 2025 nov. 04 ]
Artigo de periodico
Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3' (2007)
Volanti, D. P.; Cavalcante, L. S.; Paris, E. C.; Simões, A. Z.; Keyson, D.; Longo, V. M.; Figueiredo, A. T. de; Longo, E.; Varela, J. A.; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, BAIXA TEMPERATURA
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ABNT
VOLANTI, D. P. et al. Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters, v. 90, n. Ju 2007, p. 261913-2-261913-3, 2007Tradução . . Acesso em: 04 nov. 2025.
APA
Volanti, D. P., Cavalcante, L. S., Paris, E. C., Simões, A. Z., Keyson, D., Longo, V. M., et al. (2007). Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters, 90( Ju 2007), 261913-2-261913-3.
NLM
Volanti DP, Cavalcante LS, Paris EC, Simões AZ, Keyson D, Longo VM, Figueiredo AT de, Longo E, Varela JA, De Vicente FS, Hernandes AC. Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters. 2007 ; 90( Ju 2007): 261913-2-261913-3.[citado 2025 nov. 04 ]
Vancouver
Volanti DP, Cavalcante LS, Paris EC, Simões AZ, Keyson D, Longo VM, Figueiredo AT de, Longo E, Varela JA, De Vicente FS, Hernandes AC. Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters. 2007 ; 90( Ju 2007): 261913-2-261913-3.[citado 2025 nov. 04 ]
Artigo de periodico
Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart ; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidades: EESC, IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILICONE
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Antonio Ricardo. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, v. 89, n. 3, p. 031917-1-031917-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2227644. Acesso em: 04 nov. 2025.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, A. R. (2006). Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, 89( 3), 031917-1-031917-3. doi:10.1063/1.2227644
NLM
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2227644
Vancouver
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2227644
Artigo de periodico
Thermoelectric effect in very thin film Pt/Au thermocouples (2006)
Salvadori, Maria Cecília Barbosa da Silveira; Vaz, A; Teixeira, F S; Cattani, Mauro Sérgio Dorsa ; Brown, I G
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS
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ABNT
SALVADORI, Maria Cecília Barbosa da Silveira et al. Thermoelectric effect in very thin film Pt/Au thermocouples. Applied Physics Letters, v. 88, n. 13, p. 133106/1-133106/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2189192. Acesso em: 04 nov. 2025.
APA
Salvadori, M. C. B. da S., Vaz, A., Teixeira, F. S., Cattani, M. S. D., & Brown, I. G. (2006). Thermoelectric effect in very thin film Pt/Au thermocouples. Applied Physics Letters, 88( 13), 133106/1-133106/3. doi:10.1063/1.2189192
NLM
Salvadori MCB da S, Vaz A, Teixeira FS, Cattani MSD, Brown IG. Thermoelectric effect in very thin film Pt/Au thermocouples [Internet]. Applied Physics Letters. 2006 ; 88( 13): 133106/1-133106/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2189192
Vancouver
Salvadori MCB da S, Vaz A, Teixeira FS, Cattani MSD, Brown IG. Thermoelectric effect in very thin film Pt/Au thermocouples [Internet]. Applied Physics Letters. 2006 ; 88( 13): 133106/1-133106/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2189192
Artigo de periodico
Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' (2004)
Scopel, W L; Silva, Antonio Jose Roque da; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: FILMES FINOS, MATÉRIA CONDENSADA
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ABNT
SCOPEL, W L et al. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'. Applied Physics Letters, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Scopel, W. L., Silva, A. J. R. da, Orellana, W., & Fazzio, A. (2004). Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'. Applied Physics Letters. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
NLM
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' [Internet]. Applied Physics Letters. 2004 ;[citado 2025 nov. 04 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
Vancouver
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' [Internet]. Applied Physics Letters. 2004 ;[citado 2025 nov. 04 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
Artigo de periodico
Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions (2004)
Chitta, Valmir Antonio ; Coaquira, J A H; Fernandez, J R L; Duarte, C A; Leite, J. R.; Schikora, D; As, D J; Lischka, K; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, FILMES FINOS, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA RAMAN
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ABNT
CHITTA, Valmir Antonio et al. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, v. 85, n. 17, p. 3777-3779, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1812590. Acesso em: 04 nov. 2025.
APA
Chitta, V. A., Coaquira, J. A. H., Fernandez, J. R. L., Duarte, C. A., Leite, J. R., Schikora, D., et al. (2004). Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, 85( 17), 3777-3779. doi:10.1063/1.1812590
NLM
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1812590
Vancouver
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1812590
Artigo de periodico
InAs/GaAs quantum dots optically active at 1.5 'mu' (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T E; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA DOS MATERIAIS, FILMES FINOS
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ABNT
SILVA, M J da et al. InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, v. 82, n. 16, p. 2646-2648, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1569053. Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, 82( 16), 2646-2648. doi:10.1063/1.1569053
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1569053
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1569053
Artigo de periodico
Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function (2003)
Marques, M; Teles, L. K.; Anjos, V; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Freire, V N; Farias, G A; Silva Junior, E F da
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FILMES FINOS, ÓPTICA
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ABNT
MARQUES, M et al. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, v. 82, n. 18, p. 3074-3076, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1570922. Acesso em: 04 nov. 2025.
APA
Marques, M., Teles, L. K., Anjos, V., Scolfaro, L. M. R., Leite, J. R., Freire, V. N., et al. (2003). Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, 82( 18), 3074-3076. doi:10.1063/1.1570922
NLM
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1570922
Vancouver
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1570922
Artigo de periodico
Synthesis and spectroscopic investigation of ruby microstructures (2003)
Ribeiro, C. T. M.; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO, C. T. M. e ZANATTA, Antonio Ricardo. Synthesis and spectroscopic investigation of ruby microstructures. Applied Physics Letters, v. 83, n. 12, p. Se 2003, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1613815. Acesso em: 04 nov. 2025.
APA
Ribeiro, C. T. M., & Zanatta, A. R. (2003). Synthesis and spectroscopic investigation of ruby microstructures. Applied Physics Letters, 83( 12), Se 2003. doi:10.1063/1.1613815
NLM
Ribeiro CTM, Zanatta AR. Synthesis and spectroscopic investigation of ruby microstructures [Internet]. Applied Physics Letters. 2003 ; 83( 12): Se 2003.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1613815
Vancouver
Ribeiro CTM, Zanatta AR. Synthesis and spectroscopic investigation of ruby microstructures [Internet]. Applied Physics Letters. 2003 ; 83( 12): Se 2003.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1613815
Artigo de periodico
Nanostructure of sol-gel films by x-ray specular reflectivity (2002)
Morelhão, Sérgio Luiz; Brito, Giancarlo Esposito de Souza; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Assunto: FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MORELHÃO, Sérgio Luiz e BRITO, Giancarlo Esposito de Souza e ABRAMOF, E. Nanostructure of sol-gel films by x-ray specular reflectivity. Applied Physics Letters, v. 80, n. 3, p. 407-409, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1436271. Acesso em: 04 nov. 2025.
APA
Morelhão, S. L., Brito, G. E. de S., & Abramof, E. (2002). Nanostructure of sol-gel films by x-ray specular reflectivity. Applied Physics Letters, 80( 3), 407-409. doi:10.1063/1.1436271
NLM
Morelhão SL, Brito GE de S, Abramof E. Nanostructure of sol-gel films by x-ray specular reflectivity [Internet]. Applied Physics Letters. 2002 ; 80( 3): 407-409.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1436271
Vancouver
Morelhão SL, Brito GE de S, Abramof E. Nanostructure of sol-gel films by x-ray specular reflectivity [Internet]. Applied Physics Letters. 2002 ; 80( 3): 407-409.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1436271
Artigo de periodico
Contamination due to memory effects in filtered vacuum arc plasma deposition systems (2002)
Martins, Deilton Reis; Salvadori, Maria Cecília Barbosa da Silveira; Verdonck, Patrick Bernard; Brown, I G
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: VÁCUO, FÍSICA DE PLASMAS, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, Deilton Reis et al. Contamination due to memory effects in filtered vacuum arc plasma deposition systems. Applied Physics Letters, v. 81, n. 11, p. 1969-1971, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1506019. Acesso em: 04 nov. 2025.
APA
Martins, D. R., Salvadori, M. C. B. da S., Verdonck, P. B., & Brown, I. G. (2002). Contamination due to memory effects in filtered vacuum arc plasma deposition systems. Applied Physics Letters, 81( 11), 1969-1971. doi:10.1063/1.1506019
NLM
Martins DR, Salvadori MCB da S, Verdonck PB, Brown IG. Contamination due to memory effects in filtered vacuum arc plasma deposition systems [Internet]. Applied Physics Letters. 2002 ; 81( 11): 1969-1971.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1506019
Vancouver
Martins DR, Salvadori MCB da S, Verdonck PB, Brown IG. Contamination due to memory effects in filtered vacuum arc plasma deposition systems [Internet]. Applied Physics Letters. 2002 ; 81( 11): 1969-1971.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1506019
Artigo de periodico
Aluminium-induced crystallization of hydrogenated amorphous germanium thin films (2001)
Chambouleyron, Ivan; Fajardo, Francisco; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHAMBOULEYRON, Ivan e FAJARDO, Francisco e ZANATTA, Antonio Ricardo. Aluminium-induced crystallization of hydrogenated amorphous germanium thin films. Applied Physics Letters, v. 79, n. 20, p. 3233-3235, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1415772. Acesso em: 04 nov. 2025.
APA
Chambouleyron, I., Fajardo, F., & Zanatta, A. R. (2001). Aluminium-induced crystallization of hydrogenated amorphous germanium thin films. Applied Physics Letters, 79( 20), 3233-3235. doi:10.1063/1.1415772
NLM
Chambouleyron I, Fajardo F, Zanatta AR. Aluminium-induced crystallization of hydrogenated amorphous germanium thin films [Internet]. Applied Physics Letters. 2001 ;79( 20): 3233-3235.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1415772
Vancouver
Chambouleyron I, Fajardo F, Zanatta AR. Aluminium-induced crystallization of hydrogenated amorphous germanium thin films [Internet]. Applied Physics Letters. 2001 ;79( 20): 3233-3235.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1415772

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