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Artigo de periodico
Topological insulators based on HgTe (2020)
Kvon, Z D; Kozlov, D A; Olshanetsky, E B; Gusev, G M ; Mikhailov, N N; Dvoretsky, S A
Fonte: Physics Uspekhi. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
KVON, Z D et al. Topological insulators based on HgTe. Physics Uspekhi, v. 63, n. 7, p. 629-647, 2020Tradução . . Disponível em: https://doi.org/10.3367/UFNe.2019.10.038669. Acesso em: 16 nov. 2024.
APA
Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Topological insulators based on HgTe. Physics Uspekhi, 63( 7), 629-647. doi:10.3367/UFNe.2019.10.038669
NLM
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 nov. 16 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Vancouver
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 nov. 16 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Artigo de periodico
Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators (2019)
Rahim, Abdur; Gusev, G M ; Kvonc, Z D; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Fonte: Microelectronic Engineering. Unidade: IF
Assuntos: PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA
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ABNT
RAHIM, Abdur et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, v. 206, p. 55-59, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2018.12.011. Acesso em: 16 nov. 2024.
APA
Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
NLM
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Vancouver
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Artigo de periodico
Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well (2019)
Gusev, G M ; Raichev, O E; Olshanetsky, E B; Levin, A D ; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Fonte: 2D Materials. Unidade: IF
Assuntos: TERMOELETRICIDADE, CONDUTIVIDADE ELÉTRICA, POÇOS QUÂNTICOS
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ABNT
GUSEV, G M et al. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, v. 6, n. 014001, p. 1-21, 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/aaf702. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6( 014001), 1-21. doi:10.1088/2053-1583/aaf702
NLM
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Vancouver
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Trabalho de evento-resumo
Nonlocal transport near charge neutrality point in Two-dimensional topological insulator (2013)
Rahim, Ahmad Ali Abdul; Gusev, G M; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Nome do evento: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assuntos: SEMICONDUTORES, PROPRIEDADES DOS MATERIAIS
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ABNT
RAHIM, Ahmad Ali Abdul et al. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75. Acesso em: 16 nov. 2024.
APA
Rahim, A. A. A., Gusev, G. M., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2013). Nonlocal transport near charge neutrality point in Two-dimensional topological insulator. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
NLM
Rahim AAA, Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
Vancouver
Rahim AAA, Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
Artigo de periodico
Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field (2012)
Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M
Fonte: JETP Letters. Unidade: IF
Assunto: MAGNETISMO
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ABNT
OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 16 nov. 2024.
APA
Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072
NLM
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Vancouver
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Artigo de periodico
Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system (2012)
Gusev, G M ; Olshanetsky, E B; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Levin, A D
Fonte: Physical Review Letters. Unidade: IF
Assunto: CAMPO MAGNÉTICO
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ABNT
GUSEV, G M et al. Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system. Physical Review Letters, v. 108, n. 22, p. 226804, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.108.226804. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Levin, A. D. (2012). Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system. Physical Review Letters, 108( 22), 226804. doi:10.1103/PhysRevLett.108.226804
NLM
Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Levin AD. Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review Letters. 2012 ;108( 22): 226804.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevLett.108.226804
Vancouver
Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Levin AD. Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review Letters. 2012 ;108( 22): 226804.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevLett.108.226804
Relatorio tecnico
Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system (2012)
Gusev, G M; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Olshanetsky, E B; Levin, A D
Unidade: IF
Assuntos: CAMPO MAGNÉTICO, ELÉTRONS
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ABNT
GUSEV, G M et al. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/pdf/1205.7070v1.pdf. Acesso em: 16 nov. 2024. , 2012
APA
Gusev, G. M., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Olshanetsky, E. B., & Levin, A. D. (2012). Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/pdf/1205.7070v1.pdf
NLM
Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA, Olshanetsky EB, Levin AD. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system [Internet]. 2012 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/pdf/1205.7070v1.pdf
Vancouver
Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA, Olshanetsky EB, Levin AD. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system [Internet]. 2012 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/pdf/1205.7070v1.pdf
Artigo de periodico
Transport in disordered two-dimensional topological insulators (2011)
Gusev, G M ; Kvon, Z D; Shegai, O A; Mikhailov, N N; Dvoretsky, S A; Portal, J C
Fonte: PHYSICAL REVIEW D. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, v. 84, n. 12, p. 121302, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.121302. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2011). Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, 84( 12), 121302. doi:10.1103/PhysRevB.84.121302
NLM
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Relatorio tecnico
Transport in disordered two-dimensional topological insulator (2011)
Gusev, G M; Kvon, Z D; Shegai, O A; Portal, J C; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulator. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf. Acesso em: 16 nov. 2024. , 2011
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Portal, J. C., Mikhailov, N. N., & Dvoretsky, S. A. (2011). Transport in disordered two-dimensional topological insulator. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
NLM
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Artigo de periodico
Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System (2010)
Gousev, Guennadii Michailovich; Olshanetsky, E B; Kvon, Z D; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Fonte: Physical Review Letters. Unidade: IF
Assunto: EFEITO HALL
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ABNT
GOUSEV, Guennadii Michailovich et al. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, v. 104, n. 16, p. 166401-1 - 166401-4, 2010Tradução . . Disponível em: http://prl.aps.org/pdf/PRL/v104/i16/e166401. Acesso em: 16 nov. 2024.
APA
Gousev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, 104( 16), 166401-1 - 166401-4. Recuperado de http://prl.aps.org/pdf/PRL/v104/i16/e166401
NLM
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401
Vancouver
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401

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