Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System (2010)
- Authors:
- Autor USP: GOUSSEV, GUENNADII MIKHAILOVITCH - IF
- Unidade: IF
- Assunto: EFEITO HALL
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review Letters
- Volume/Número/Paginação/Ano: v. 104, n. 16, p. 166401-1 - 166401-4, 2010
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ABNT
GOUSEV, Guennadii Michailovich; OLSHANETSKY, E B; KVON, Z D; et al. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, Woodbury, v. 104, n. 16, p. 166401-1 - 166401-4, 2010. Disponível em: < http://prl.aps.org/pdf/PRL/v104/i16/e166401 >. -
APA
Gousev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, 104( 16), 166401-1 - 166401-4. Recuperado de http://prl.aps.org/pdf/PRL/v104/i16/e166401 -
NLM
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401 -
Vancouver
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401 - Low field magnetoresistance in a 2D topological insulator based on wide 'HG''TE' quantum well
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