Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators (2019)
- Authors:
- USP affiliated authors: GUSEV, GENNADY - IF ; RAHIM, ABDUR - IF
- Unidade: IF
- DOI: 10.1016/j.mee.2018.12.011
- Subjects: PROPRIEDADES DOS MATERIAIS; NANOTECNOLOGIA
- Keywords: TOPOLOGICAL INSULATORS; ENERGY RELAXATION MECHANISMS; NON-LINEAR TRANSPORT; ELECTRON-PHONON SCATTERING; INELASTIC PROCESSES
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Microelectronic Engineering
- ISSN: 1873-5568
- Volume/Número/Paginação/Ano: v. 206, Feb, p. 55-59, 2019
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
RAHIM, Abdur et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, v. 206, p. 55-59, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2018.12.011. Acesso em: 10 jan. 2026. -
APA
Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011 -
NLM
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011 -
Vancouver
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011 - Efeito Hall de spin em nanoestruturas semicondutoras
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- 2D lattice of coupled Sinai billiards: metal or insulator at g1?
- Coherence properties of submicron GaAs/AlGaAs rings with a ferromagnetic gate
- Nonlinear effects in a two-dimensional electron gas with periodic lattice of scatterers
- Circularly polarized photoluminescence as a probe of density of states in 'GA''AS'/'AL''GA''AS' quantum hall bilayers
- Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system
- Magnetophonon oscillations of thermoelectric power and combined resonance in two-subband electron systems
- 2D lattice of coupled Sinai billiards: metal or insulator at g1?
Informações sobre o DOI: 10.1016/j.mee.2018.12.011 (Fonte: oaDOI API)
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