ReP USP - Resultado da busca

Trabalho de evento-resumo
Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions (2022)
Kawahala, Nícolas Massarico; Gusev, Guennadii Michailovich ; Hernandez, F G G; Raichev, O E; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: FÉRMIO
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ABNT
KAWAHALA, Nícolas Massarico et al. Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 16 nov. 2024.
APA
Kawahala, N. M., Gusev, G. M., Hernandez, F. G. G., Raichev, O. E., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2022). Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Kawahala NM, Gusev GM, Hernandez FGG, Raichev OE, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. Resumos. 2022 ;[citado 2024 nov. 16 ]
Vancouver
Kawahala NM, Gusev GM, Hernandez FGG, Raichev OE, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. Resumos. 2022 ;[citado 2024 nov. 16 ]
Trabalho de evento-resumo
Thermoelectric phenomena in 2D e 3D topological insulators (2022)
Levin, A D ; Gusev, Guennadii Michailovich ; Raichev, O E; Olshanetsky, E B; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: TERMOELETRICIDADE
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LEVIN, A D et al. Thermoelectric phenomena in 2D e 3D topological insulators. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 16 nov. 2024.
APA
Levin, A. D., Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2022). Thermoelectric phenomena in 2D e 3D topological insulators. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Levin AD, Gusev GM, Raichev OE, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric phenomena in 2D e 3D topological insulators. Resumos. 2022 ;[citado 2024 nov. 16 ]
Vancouver
Levin AD, Gusev GM, Raichev OE, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric phenomena in 2D e 3D topological insulators. Resumos. 2022 ;[citado 2024 nov. 16 ]
Artigo de periodico
Topological insulators based on HgTe (2020)
Kvon, Z D; Kozlov, D A; Olshanetsky, E B; Gusev, G M ; Mikhailov, N N; Dvoretsky, S A
Source: Physics Uspekhi. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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KVON, Z D et al. Topological insulators based on HgTe. Physics Uspekhi, v. 63, n. 7, p. 629-647, 2020Tradução . . Disponível em: https://doi.org/10.3367/UFNe.2019.10.038669. Acesso em: 16 nov. 2024.
APA
Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Topological insulators based on HgTe. Physics Uspekhi, 63( 7), 629-647. doi:10.3367/UFNe.2019.10.038669
NLM
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 nov. 16 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Vancouver
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 nov. 16 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Artigo de periodico
Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators (2019)
Rahim, Abdur; Gusev, G M ; Kvonc, Z D; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Source: Microelectronic Engineering. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA
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RAHIM, Abdur et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, v. 206, p. 55-59, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2018.12.011. Acesso em: 16 nov. 2024.
APA
Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
NLM
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Vancouver
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Artigo de periodico
Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well (2019)
Gusev, G M ; Raichev, O E; Olshanetsky, E B; Levin, A D ; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: 2D Materials. Unidade: IF
Subjects: TERMOELETRICIDADE, CONDUTIVIDADE ELÉTRICA, POÇOS QUÂNTICOS
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ABNT
GUSEV, G M et al. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, v. 6, n. 014001, p. 1-21, 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/aaf702. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6( 014001), 1-21. doi:10.1088/2053-1583/aaf702
NLM
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Vancouver
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Artigo de periodico
Robust helical edge transport at 'nü' = 0 quantum Hall state (2017)
Gusev, Guennadii Michailovich; Kozlov, D A; Levin, Alexander D; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: Physical Review B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
GUSEV, Guennadii Michailovich et al. Robust helical edge transport at 'nü' = 0 quantum Hall state. Physical Review B, v. 96, n. 4, p. 045304/1-045304/5, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.96.045304. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Kozlov, D. A., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2017). Robust helical edge transport at 'nü' = 0 quantum Hall state. Physical Review B, 96( 4), 045304/1-045304/5. doi:10.1103/PhysRevB.96.045304
NLM
Gusev GM, Kozlov DA, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Robust helical edge transport at 'nü' = 0 quantum Hall state [Internet]. Physical Review B. 2017 ;96( 4): 045304/1-045304/5.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.96.045304
Vancouver
Gusev GM, Kozlov DA, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Robust helical edge transport at 'nü' = 0 quantum Hall state [Internet]. Physical Review B. 2017 ;96( 4): 045304/1-045304/5.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.96.045304
Trabalho de evento-resumo
Nonlocal transport near charge neutrality point in Two-dimensional topological insulator (2013)
Rahim, Ahmad Ali Abdul; Gusev, G M; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, PROPRIEDADES DOS MATERIAIS
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ABNT
RAHIM, Ahmad Ali Abdul et al. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75. Acesso em: 16 nov. 2024.
APA
Rahim, A. A. A., Gusev, G. M., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2013). Nonlocal transport near charge neutrality point in Two-dimensional topological insulator. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
NLM
Rahim AAA, Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
Vancouver
Rahim AAA, Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA. Nonlocal transport near charge neutrality point in Two-dimensional topological insulator [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=75
Relatorio tecnico
Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions (2013)
Gusev, Guennadii Michailovich; Levine, Alexandre; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Assunto: EFEITO HALL
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ABNT
GUSEV, Guennadii Michailovich et al. Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://lanl.arxiv.org/pdf/1302.3523v1.pdf. Acesso em: 16 nov. 2024. , 2013
APA
Gusev, G. M., Levine, A., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2013). Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://lanl.arxiv.org/pdf/1302.3523v1.pdf
NLM
Gusev GM, Levine A, Kvon ZD, Mikhailov NN, Dvoretsky SA. Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://lanl.arxiv.org/pdf/1302.3523v1.pdf
Vancouver
Gusev GM, Levine A, Kvon ZD, Mikhailov NN, Dvoretsky SA. Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://lanl.arxiv.org/pdf/1302.3523v1.pdf
Artigo de periodico
Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field (2012)
Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M
Source: JETP Letters. Unidade: IF
Assunto: MAGNETISMO
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ABNT
OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 16 nov. 2024.
APA
Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072
NLM
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Vancouver
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Artigo de periodico
Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system (2012)
Gusev, G M ; Olshanetsky, E B; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Levin, A D
Source: Physical Review Letters. Unidade: IF
Assunto: CAMPO MAGNÉTICO
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ABNT
GUSEV, G M et al. Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system. Physical Review Letters, v. 108, n. 22, p. 226804, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.108.226804. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Levin, A. D. (2012). Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system. Physical Review Letters, 108( 22), 226804. doi:10.1103/PhysRevLett.108.226804
NLM
Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Levin AD. Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review Letters. 2012 ;108( 22): 226804.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevLett.108.226804
Vancouver
Gusev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Levin AD. Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system [Internet]. Physical Review Letters. 2012 ;108( 22): 226804.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevLett.108.226804
Relatorio tecnico
Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system (2012)
Gusev, G M; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Olshanetsky, E B; Levin, A D
Unidade: IF
Subjects: CAMPO MAGNÉTICO, ELÉTRONS
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ABNT
GUSEV, G M et al. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/pdf/1205.7070v1.pdf. Acesso em: 16 nov. 2024. , 2012
APA
Gusev, G. M., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Olshanetsky, E. B., & Levin, A. D. (2012). Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/pdf/1205.7070v1.pdf
NLM
Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA, Olshanetsky EB, Levin AD. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system [Internet]. 2012 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/pdf/1205.7070v1.pdf
Vancouver
Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA, Olshanetsky EB, Levin AD. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system [Internet]. 2012 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/pdf/1205.7070v1.pdf
Artigo de periodico
Transport in disordered two-dimensional topological insulators (2011)
Gusev, G M ; Kvon, Z D; Shegai, O A; Mikhailov, N N; Dvoretsky, S A; Portal, J C
Source: PHYSICAL REVIEW D. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, v. 84, n. 12, p. 121302, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.121302. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2011). Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, 84( 12), 121302. doi:10.1103/PhysRevB.84.121302
NLM
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Relatorio tecnico
Transport in disordered two-dimensional topological insulator (2011)
Gusev, G M; Kvon, Z D; Shegai, O A; Portal, J C; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulator. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf. Acesso em: 16 nov. 2024. , 2011
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Portal, J. C., Mikhailov, N. N., & Dvoretsky, S. A. (2011). Transport in disordered two-dimensional topological insulator. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
NLM
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Artigo de periodico
Weak antilocalization in HgTe quantum wells near a topological transition (2010)
Olshanetskya, E B; Kvon, Z D; Gusev, Guennadii Michailovich ; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: JETP Letters. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
OLSHANETSKYA, E B et al. Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, v. 91, n. 7, p. 347-350, 2010Tradução . . Disponível em: https://doi.org/10.1134/S0021364010070052. Acesso em: 16 nov. 2024.
APA
Olshanetskya, E. B., Kvon, Z. D., Gusev, G. M., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, 91( 7), 347-350. doi:10.1134/S0021364010070052
NLM
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Vancouver
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Artigo de periodico
Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System (2010)
Gousev, Guennadii Michailovich; Olshanetsky, E B; Kvon, Z D; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: Physical Review Letters. Unidade: IF
Assunto: EFEITO HALL
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ABNT
GOUSEV, Guennadii Michailovich et al. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, v. 104, n. 16, p. 166401-1 - 166401-4, 2010Tradução . . Disponível em: http://prl.aps.org/pdf/PRL/v104/i16/e166401. Acesso em: 16 nov. 2024.
APA
Gousev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, 104( 16), 166401-1 - 166401-4. Recuperado de http://prl.aps.org/pdf/PRL/v104/i16/e166401
NLM
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401
Vancouver
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401

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