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  • Source: Journal of Physics D. Unidades: IFSC, IF

    Subjects: FOTOLUMINESCÊNCIA, FÍSICA MODERNA, HIDRODINÂMICA, POÇOS QUÂNTICOS

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      PUSEP, Yuri A. et al. Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel. Journal of Physics D, v. 56, n. 17, p. 175301-1-175301-8, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6463/acba2a. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., Levine, A., & Bakarov, A. (2023). Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel. Journal of Physics D, 56( 17), 175301-1-175301-8. doi:10.1088/1361-6463/acba2a
    • NLM

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Levine A, Bakarov A. Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel [Internet]. Journal of Physics D. 2023 ; 56( 17): 175301-1-175301-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6463/acba2a
    • Vancouver

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Levine A, Bakarov A. Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel [Internet]. Journal of Physics D. 2023 ; 56( 17): 175301-1-175301-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6463/acba2a
  • Source: Physica Scripta. Unidade: IFSC

    Subjects: CAMPO MAGNÉTICO, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA

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      PATRICIO, Marco Antonio Tito e PUSEP, Yuri A. Effect of magnetic field on recombination dynamics in random electron systems. Physica Scripta, v. 98, n. 9, p. 095938-1-095938-8, 2023Tradução . . Disponível em: https://doi.org/10.1088/1402-4896/aceec4. Acesso em: 14 set. 2024.
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      Patricio, M. A. T., & Pusep, Y. A. (2023). Effect of magnetic field on recombination dynamics in random electron systems. Physica Scripta, 98( 9), 095938-1-095938-8. doi:10.1088/1402-4896/aceec4
    • NLM

      Patricio MAT, Pusep YA. Effect of magnetic field on recombination dynamics in random electron systems [Internet]. Physica Scripta. 2023 ; 98( 9): 095938-1-095938-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1402-4896/aceec4
    • Vancouver

      Patricio MAT, Pusep YA. Effect of magnetic field on recombination dynamics in random electron systems [Internet]. Physica Scripta. 2023 ; 98( 9): 095938-1-095938-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1402-4896/aceec4
  • Source: Physical Chemistry Chemical Physics. Unidade: IFSC

    Subjects: FOTÔNICA, POÇOS QUÂNTICOS

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      SANTOS, Carlos Henrique Domingues dos et al. Size-dependent photoinduced transparency in colloidal CdTe quantum dots in the strong confinement regime: an inverse linear relationship. Physical Chemistry Chemical Physics, v. 25, n. Ja 2023, p. 359-365, 2023Tradução . . Disponível em: https://doi.org/10.1039/d2cp05006d. Acesso em: 14 set. 2024.
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      Santos, C. H. D. dos, Ferreira, D. L., Cocca, L. H. Z., Mourão, R. S., Schiavon, M. A., Mendonça, C. R., et al. (2023). Size-dependent photoinduced transparency in colloidal CdTe quantum dots in the strong confinement regime: an inverse linear relationship. Physical Chemistry Chemical Physics, 25( Ja 2023), 359-365. doi:10.1039/d2cp05006d
    • NLM

      Santos CHD dos, Ferreira DL, Cocca LHZ, Mourão RS, Schiavon MA, Mendonça CR, De Boni L, Vivas MG. Size-dependent photoinduced transparency in colloidal CdTe quantum dots in the strong confinement regime: an inverse linear relationship [Internet]. Physical Chemistry Chemical Physics. 2023 ; 25( Ja 2023): 359-365.[citado 2024 set. 14 ] Available from: https://doi.org/10.1039/d2cp05006d
    • Vancouver

      Santos CHD dos, Ferreira DL, Cocca LHZ, Mourão RS, Schiavon MA, Mendonça CR, De Boni L, Vivas MG. Size-dependent photoinduced transparency in colloidal CdTe quantum dots in the strong confinement regime: an inverse linear relationship [Internet]. Physical Chemistry Chemical Physics. 2023 ; 25( Ja 2023): 359-365.[citado 2024 set. 14 ] Available from: https://doi.org/10.1039/d2cp05006d
  • Source: 2D Materials. Unidade: IF

    Subjects: FÉRMIO, POÇOS QUÂNTICOS

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      GUSEV, Gennady et al. Transport through the network of topological channels in HgTe based quantum well. 2D Materials, v. 9, n. 1, 2022Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/ac351e. Acesso em: 14 set. 2024.
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      Gusev, G., Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Entin, M. V., & Mikhailov, N. N. (2022). Transport through the network of topological channels in HgTe based quantum well. 2D Materials, 9( 1). doi:10.1088/2053-1583/ac351e
    • NLM

      Gusev G, Kvon ZD, Kozlov DA, Olshanetsky EB, Entin MV, Mikhailov NN. Transport through the network of topological channels in HgTe based quantum well [Internet]. 2D Materials. 2022 ; 9( 1):[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/2053-1583/ac351e
    • Vancouver

      Gusev G, Kvon ZD, Kozlov DA, Olshanetsky EB, Entin MV, Mikhailov NN. Transport through the network of topological channels in HgTe based quantum well [Internet]. 2D Materials. 2022 ; 9( 1):[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/2053-1583/ac351e
  • Source: 2D Materials. Unidade: IF

    Subjects: TERMOELETRICIDADE, CONDUTIVIDADE ELÉTRICA, POÇOS QUÂNTICOS

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      GUSEV, G M et al. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, v. 6, n. 014001, p. 1-21, 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/aaf702. Acesso em: 14 set. 2024.
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      Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6( 014001), 1-21. doi:10.1088/2053-1583/aaf702
    • NLM

      Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
    • Vancouver

      Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
  • Source: Poster contributions. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, POÇOS QUÂNTICOS, SPIN

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      LAURINDO JUNIOR, V. et al. Magnetically spin controlled excitation transfer in hybrid quantum dot-quantum well nanostructures. 2019, Anais.. Bristol: Institute of Physics - IOP, 2019. Disponível em: http://www.ldsd2019.org/committees. Acesso em: 14 set. 2024.
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      Laurindo Junior, V., Mazur, Y. I., Oliveira, E. R. C., Alén, B., Ware, M. E., Marega Júnior, E., et al. (2019). Magnetically spin controlled excitation transfer in hybrid quantum dot-quantum well nanostructures. In Poster contributions. Bristol: Institute of Physics - IOP. Recuperado de http://www.ldsd2019.org/committees
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      Laurindo Junior V, Mazur YI, Oliveira ERC, Alén B, Ware ME, Marega Júnior E, Zchuchenko ZY, Tarasov GG, Marques GE, Salamo GJ, Teodoro MD. Magnetically spin controlled excitation transfer in hybrid quantum dot-quantum well nanostructures [Internet]. Poster contributions. 2019 ;[citado 2024 set. 14 ] Available from: http://www.ldsd2019.org/committees
    • Vancouver

      Laurindo Junior V, Mazur YI, Oliveira ERC, Alén B, Ware ME, Marega Júnior E, Zchuchenko ZY, Tarasov GG, Marques GE, Salamo GJ, Teodoro MD. Magnetically spin controlled excitation transfer in hybrid quantum dot-quantum well nanostructures [Internet]. Poster contributions. 2019 ;[citado 2024 set. 14 ] Available from: http://www.ldsd2019.org/committees
  • Source: Nanotechnology. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, TRANSPORTE DE CARGA, FILMES FINOS

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      JIMENEZ, Mawin J. M. et al. Enhanced mobility and controlled transparency in multilayered reduced graphene oxide quantum dots: a charge transport study. Nanotechnology, v. 30, n. 27, p. 275701-1-275701-8, 2019Tradução . . Disponível em: https://doi.org/10.1088/1361-6528/ab118e. Acesso em: 14 set. 2024.
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      Jimenez, M. J. M., Oliveira, R. F., Bufon, C. C. B., Silva, M. de A. P. da, Rodrigues, V., Gobbi, Â. L., et al. (2019). Enhanced mobility and controlled transparency in multilayered reduced graphene oxide quantum dots: a charge transport study. Nanotechnology, 30( 27), 275701-1-275701-8. doi:10.1088/1361-6528/ab118e
    • NLM

      Jimenez MJM, Oliveira RF, Bufon CCB, Silva M de AP da, Rodrigues V, Gobbi ÂL, Piazzetta MHO, Alvarez F, Cesar CL, Riul Junior A. Enhanced mobility and controlled transparency in multilayered reduced graphene oxide quantum dots: a charge transport study [Internet]. Nanotechnology. 2019 ; 30( 27): 275701-1-275701-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6528/ab118e
    • Vancouver

      Jimenez MJM, Oliveira RF, Bufon CCB, Silva M de AP da, Rodrigues V, Gobbi ÂL, Piazzetta MHO, Alvarez F, Cesar CL, Riul Junior A. Enhanced mobility and controlled transparency in multilayered reduced graphene oxide quantum dots: a charge transport study [Internet]. Nanotechnology. 2019 ; 30( 27): 275701-1-275701-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6528/ab118e
  • Source: Poster contributions. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS

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      TAVARES, Belarmino Gomes Mendes et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. 2019, Anais.. Bristol: Institute of Physics - IOP, 2019. Disponível em: http://www.ldsd2019.org/committees. Acesso em: 14 set. 2024.
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      Tavares, B. G. M., Teodoro, M. D., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2019). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. In Poster contributions. Bristol: Institute of Physics - IOP. Recuperado de http://www.ldsd2019.org/committees
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      Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 set. 14 ] Available from: http://www.ldsd2019.org/committees
    • Vancouver

      Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 set. 14 ] Available from: http://www.ldsd2019.org/committees
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, CAMPO ELETROMAGNÉTICO

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      CAMPOS, T. et al. Electrical tuning of helical edge states in topological multilayers. Journal of Physics: Condensed Matter, v. 31, n. 49, p. 495501-1-495501-10, 2019Tradução . . Disponível em: https://doi.org/10.1088/1361-648X/ab38a1. Acesso em: 14 set. 2024.
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      Campos, T., Sandoval, M. A. T., Diago-Cisneros, L., & Sipahi, G. M. (2019). Electrical tuning of helical edge states in topological multilayers. Journal of Physics: Condensed Matter, 31( 49), 495501-1-495501-10. doi:10.1088/1361-648X/ab38a1
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      Campos T, Sandoval MAT, Diago-Cisneros L, Sipahi GM. Electrical tuning of helical edge states in topological multilayers [Internet]. Journal of Physics: Condensed Matter. 2019 ; 31( 49): 495501-1-495501-10.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-648X/ab38a1
    • Vancouver

      Campos T, Sandoval MAT, Diago-Cisneros L, Sipahi GM. Electrical tuning of helical edge states in topological multilayers [Internet]. Journal of Physics: Condensed Matter. 2019 ; 31( 49): 495501-1-495501-10.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-648X/ab38a1
  • Source: Journal of Physics D. Unidade: IFSC

    Subjects: CAMPO MAGNÉTICO, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA

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      TITO, M. A. e PUSEP, Yuri A. Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells. Journal of Physics D, v. 51, n. Ja 2018, p. 015304-1-015304-6, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6463/aa99cd. Acesso em: 14 set. 2024.
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      Tito, M. A., & Pusep, Y. A. (2018). Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells. Journal of Physics D, 51( Ja 2018), 015304-1-015304-6. doi:10.1088/1361-6463/aa99cd
    • NLM

      Tito MA, Pusep YA. Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells [Internet]. Journal of Physics D. 2018 ; 51( Ja 2018): 015304-1-015304-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6463/aa99cd
    • Vancouver

      Tito MA, Pusep YA. Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells [Internet]. Journal of Physics D. 2018 ; 51( Ja 2018): 015304-1-015304-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6463/aa99cd
  • Source: Nanotechnology. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, TRANSPORTE DE CARGA, FILMES FINOS

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      JIMENEZ, Mawin J. M. et al. Charge carrier transport in defective reduced graphene oxide as quantum dots and nanoplatelets in multilayer films. Nanotechnology, v. No 2017, n. 49, p. 495711-1-495711-11, 2017Tradução . . Disponível em: https://doi.org/10.1088/1361-6528/aa91c2. Acesso em: 14 set. 2024.
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      Jimenez, M. J. M., Oliveira, R. F., Almeida, T. P., Ferreira, R. C. H., Bufon, C. C. B., Silva, M. de A. P. da, et al. (2017). Charge carrier transport in defective reduced graphene oxide as quantum dots and nanoplatelets in multilayer films. Nanotechnology, No 2017( 49), 495711-1-495711-11. doi:10.1088/1361-6528/aa91c2
    • NLM

      Jimenez MJM, Oliveira RF, Almeida TP, Ferreira RCH, Bufon CCB, Silva M de AP da, Gobbi ÂL, Piazzetta MHO, Riul Junior A. Charge carrier transport in defective reduced graphene oxide as quantum dots and nanoplatelets in multilayer films [Internet]. Nanotechnology. 2017 ; No 2017( 49): 495711-1-495711-11.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6528/aa91c2
    • Vancouver

      Jimenez MJM, Oliveira RF, Almeida TP, Ferreira RCH, Bufon CCB, Silva M de AP da, Gobbi ÂL, Piazzetta MHO, Riul Junior A. Charge carrier transport in defective reduced graphene oxide as quantum dots and nanoplatelets in multilayer films [Internet]. Nanotechnology. 2017 ; No 2017( 49): 495711-1-495711-11.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/1361-6528/aa91c2
  • Source: Superlattices and Microstructures. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, FOTODETECTORES, ELETRÔNICA QUÂNTICA

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      AQUINO, V M de et al. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, v. 101, n. ja, p. 236-243, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.11.042. Acesso em: 14 set. 2024.
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      Aquino, V. M. de, Iwamoto, H., Dias, I. F. L., Laureto, E., Silva, M. A. T. da, Silva, E. C. F. da, & Quivy, A. A. (2017). Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, 101( ja), 236-243. doi:10.1016/j.spmi.2016.11.042
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      Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2024 set. 14 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
    • Vancouver

      Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2024 set. 14 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA

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      PUSEP, Yuri A. e TITO, M. A. e LAPIERRE, R. R. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, v. 28, n. 17, p. 175602-1-175602-7, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/17/175602. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Tito, M. A., & LaPierre, R. R. (2016). Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, 28( 17), 175602-1-175602-7. doi:10.1088/0953-8984/28/17/175602
    • NLM

      Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602
    • Vancouver

      Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA

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      SANTOS, L. Fernandes dos et al. Excitonic spin-splitting in quantum wells with a tilted magnetic field. Journal of Physics: Condensed Matter, v. 28, n. 5, p. 055503-1-055503-8, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/5/055503. Acesso em: 14 set. 2024.
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      Santos, L. F. dos, Castelano, L. K., Padilha, J. X., Pusep, Y. A., Marques, G. E., Smirnov, D., et al. (2016). Excitonic spin-splitting in quantum wells with a tilted magnetic field. Journal of Physics: Condensed Matter, 28( 5), 055503-1-055503-8. doi:10.1088/0953-8984/28/5/055503
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      Santos LF dos, Castelano LK, Padilha JX, Pusep YA, Marques GE, Smirnov D, Bakarov AK, Toropov AI, Lopez-Richard V. Excitonic spin-splitting in quantum wells with a tilted magnetic field [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 5): 055503-1-055503-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/28/5/055503
    • Vancouver

      Santos LF dos, Castelano LK, Padilha JX, Pusep YA, Marques GE, Smirnov D, Bakarov AK, Toropov AI, Lopez-Richard V. Excitonic spin-splitting in quantum wells with a tilted magnetic field [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 5): 055503-1-055503-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/28/5/055503
  • Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES

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      SOBREIRA, Fernando Wellysson de Alencar et al. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf. Acesso em: 14 set. 2024.
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      Sobreira, F. W. de A., Arakaki, H., Souza, C. A. de, & Marega Junior, E. (2014). Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
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      Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
    • Vancouver

      Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
  • Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES

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      PUSEP, Yuri A. et al. Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Santos, L. F. dos, Castelano, L. K., Padilha, J. X., Lopez-Richard, V., Marques, G. E., et al. (2014). Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf
    • NLM

      Pusep YA, Santos LF dos, Castelano LK, Padilha JX, Lopez-Richard V, Marques GE, Smirnov D, Bakarov AK, Toropov AI. Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf
    • Vancouver

      Pusep YA, Santos LF dos, Castelano LK, Padilha JX, Lopez-Richard V, Marques GE, Smirnov D, Bakarov AK, Toropov AI. Valence band spin-splitting detuning with tilting magnetic field in multiple quantum wells [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Spintronics_Spin_Phenomena.pdf
  • Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA, SEMICONDUTORES

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      PUSEP, Yuri A. et al. Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Santos, L. F. dos, Barbosa, B., Gusev, G. M., Ludwig, J., Smirnov, D., & Bakarov, A. (2014). Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf
    • NLM

      Pusep YA, Santos LF dos, Barbosa B, Gusev GM, Ludwig J, Smirnov D, Bakarov A. Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf
    • Vancouver

      Pusep YA, Santos LF dos, Barbosa B, Gusev GM, Ludwig J, Smirnov D, Bakarov A. Evidence of quantum hall gap collapse caused by tilted magnetic field in photoluminescence spectra of a GaAs/AlGaAs triple quantum well [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Quantum_Hall_Effects.pdf
  • Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES

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      FERRI, Fabio Aparecido et al. Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf. Acesso em: 14 set. 2024.
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      Ferri, F. A., Benamara, M., Salamo, G., Teodoro, M., & Marega Júnior, E. (2014). Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf
    • NLM

      Ferri FA, Benamara M, Salamo G, Teodoro M, Marega Júnior E. Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf
    • Vancouver

      Ferri FA, Benamara M, Salamo G, Teodoro M, Marega Júnior E. Study of Mn incorporation in InAs quantum dots fabricated by low-temperature molecular beam epitaxy [Internet]. Abstracts. 2014 ;[citado 2024 set. 14 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_A.pdf
  • Source: Semiconductor Science Technology. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, FÍSICA TEÓRICA

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      MICHETTI, P. et al. Helical edge states in multiple topological mass domains. Semiconductor Science Technology, v. 27, n. 12, p. 124007-1-124007-10, 2012Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/27/12/124007. Acesso em: 14 set. 2024.
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      Michetti, P., Penteado, P. H., Egues, J. C., & Recher, P. (2012). Helical edge states in multiple topological mass domains. Semiconductor Science Technology, 27( 12), 124007-1-124007-10. doi:10.1088/0268-1242/27/12/124007
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      Michetti P, Penteado PH, Egues JC, Recher P. Helical edge states in multiple topological mass domains [Internet]. Semiconductor Science Technology. 2012 ; 27( 12): 124007-1-124007-10.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0268-1242/27/12/124007
    • Vancouver

      Michetti P, Penteado PH, Egues JC, Recher P. Helical edge states in multiple topological mass domains [Internet]. Semiconductor Science Technology. 2012 ; 27( 12): 124007-1-124007-10.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0268-1242/27/12/124007
  • Source: Nanotechnology. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, POÇOS QUÂNTICOS

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      FREITAS NETO, E. S. et al. Temperature-dependent Raman study of thermal parameters in CdS quantum dots. Nanotechnology, v. 23, n. 12, p. 125701-1-125701-8, 2012Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/23/12/125701. Acesso em: 14 set. 2024.
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      Freitas Neto, E. S., Dantas, N. O., Silva, S. W., Morais, P. C., Silva, M. de A. P. da, Moreno, A. J. D., et al. (2012). Temperature-dependent Raman study of thermal parameters in CdS quantum dots. Nanotechnology, 23( 12), 125701-1-125701-8. doi:10.1088/0957-4484/23/12/125701
    • NLM

      Freitas Neto ES, Dantas NO, Silva SW, Morais PC, Silva M de AP da, Moreno AJD, López-Richard V, Marques GE, Trallero-Giner C. Temperature-dependent Raman study of thermal parameters in CdS quantum dots [Internet]. Nanotechnology. 2012 ; 23( 12): 125701-1-125701-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0957-4484/23/12/125701
    • Vancouver

      Freitas Neto ES, Dantas NO, Silva SW, Morais PC, Silva M de AP da, Moreno AJD, López-Richard V, Marques GE, Trallero-Giner C. Temperature-dependent Raman study of thermal parameters in CdS quantum dots [Internet]. Nanotechnology. 2012 ; 23( 12): 125701-1-125701-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0957-4484/23/12/125701

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