Recombination dynamics of Landau levels in an InGaAs/InP quantum well

Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2019)

Authors:
USP affiliated authors: POUSSEP, IOURI - IFSC ; TAVARES, BELARMINO GOMES MENDES - IFSC
Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA; POÇOS QUÂNTICOS
Language: Inglês
Imprenta:
- Publisher: Institute of Physics - IOP
- Publisher place: Bristol
- Date published: 2019
Source:
- Título: Poster contributions
Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD

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ABNT

TAVARES, Belarmino Gomes Mendes et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. 2019, Anais.. Bristol: Institute of Physics - IOP, 2019. Disponível em: http://www.ldsd2019.org/committees. Acesso em: 28 dez. 2025.
APA

Tavares, B. G. M., Teodoro, M. D., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2019). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. In Poster contributions. Bristol: Institute of Physics - IOP. Recuperado de http://www.ldsd2019.org/committees
NLM

Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2025 dez. 28 ] Available from: http://www.ldsd2019.org/committees
Vancouver

Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2025 dez. 28 ] Available from: http://www.ldsd2019.org/committees