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Filtros : "POÇOS QUÂNTICOS" "MORELHAO, SERGIO LUIZ" Limpar

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  • Trabalho de evento-anais periodico

    Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction (2009)

    Freitas, Raul de Oliveira; Diaz, Beatriz; Abramof, Eduardo; Quivy, A. A.; Morelhão, Sérgio Luiz

    Source: Physica Status Solidi A - Applications and Materials Science. Conference titles: Biennial Conference on High Resolution X-Ray Diffraction and Imaging. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X

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    • ABNT

      FREITAS, Raul de Oliveira et al. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART. Acesso em: 16 out. 2024. , 2009

    • APA

      Freitas, R. de O., Diaz, B., Abramof, E., Quivy, A. A., & Morelhão, S. L. (2009). Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

    • NLM

      Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 out. 16 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

    • Vancouver

      Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 out. 16 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

  • Artigo de periodico

    Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems (2009)

    Freitas, R O; Quivy, A. A.; Morelhão, Sérgio Luiz

    Conference titles: Activity Report 2008: LNLS/Brazilian Synchrotron Light Laboratory. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, SISTEMA QUÂNTICO, ESPALHAMENTO

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    • ABNT

      FREITAS, R O e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. 2009Tradução . . Disponível em: http://www.lnls.br/ar2008/web/index.html. Acesso em: 16 out. 2024.

    • APA

      Freitas, R. O., Quivy, A. A., & Morelhão, S. L. (2009). Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. Recuperado de http://www.lnls.br/ar2008/web/index.html

    • NLM

      Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2024 out. 16 ] Available from: http://www.lnls.br/ar2008/web/index.html

    • Vancouver

      Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2024 out. 16 ] Available from: http://www.lnls.br/ar2008/web/index.html

  • Trabalho de evento-resumo

    Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning (2005)

    Freitas, R. O.; Morelhão, Sérgio Luiz; Quivy, A. A.; Avanci, L H

    Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS

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    • ABNT

      FREITAS, R. O. et al. Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning. 2005, Anais.. São Paulo: Sociedade Brasileira de Física, 2005. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf. Acesso em: 16 out. 2024.

    • APA

      Freitas, R. O., Morelhão, S. L., Quivy, A. A., & Avanci, L. H. (2005). Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning. In Resumos. São Paulo: Sociedade Brasileira de Física. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf

    • NLM

      Freitas RO, Morelhão SL, Quivy AA, Avanci LH. Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning [Internet]. Resumos. 2005 ;[citado 2024 out. 16 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf

    • Vancouver

      Freitas RO, Morelhão SL, Quivy AA, Avanci LH. Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning [Internet]. Resumos. 2005 ;[citado 2024 out. 16 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf
  • 1

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