Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
ABNT
SOBREIRA, Fernando Wellysson de Alencar et al. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf. Acesso em: 23 ago. 2024.APA
Sobreira, F. W. de A., Arakaki, H., Souza, C. A. de, & Marega Junior, E. (2014). Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Material_Structure.pdfNLM
Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 ago. 23 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdfVancouver
Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 ago. 23 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf