Source: Resumo. Conference titles: International Conference on Ion Beam Analysis. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
ABNT
CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. 2011, Anais.. Itapema: IBA, 2011. Disponível em: http://www.if.ufrgs.br/iba2011/program/239.pdf. Acesso em: 23 ago. 2024.APA
Cirne, K. H., Lima, J. A. de, Seixas Jr, L. E., Silveira, M. A. G., Barbosa, M. D. L., Tabacniks, M. H., et al. (2011). Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. In Resumo. Itapema: IBA. Recuperado de http://www.if.ufrgs.br/iba2011/program/239.pdfNLM
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. [Internet]. Resumo. 2011 ;[citado 2024 ago. 23 ] Available from: http://www.if.ufrgs.br/iba2011/program/239.pdfVancouver
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. [Internet]. Resumo. 2011 ;[citado 2024 ago. 23 ] Available from: http://www.if.ufrgs.br/iba2011/program/239.pdf