Filtros : "Universidade Federal de São Carlos (UFSCar)" "Journal of Applied Physics" Removido: "Nogaroto, V." Limpar

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  • Source: Journal of Applied Physics. Unidade: ICMC

    Subjects: APRENDIZADO COMPUTACIONAL, MÉTODO DOS ELEMENTOS FINITOS, FORNO ELÉTRICO, TRANSFERÊNCIA DE CALOR

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      SANTOS, Denise P et al. Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework. Journal of Applied Physics, v. 127, n. 21, p. 215104-1-215104-7, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0004395. Acesso em: 29 jul. 2024.
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      Santos, D. P., Pelissari, P. I. B. G. B., Mello, R. F. de, & Pandolfelli, V. C. (2020). Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework. Journal of Applied Physics, 127( 21), 215104-1-215104-7. doi:10.1063/5.0004395
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      Santos DP, Pelissari PIBGB, Mello RF de, Pandolfelli VC. Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework [Internet]. Journal of Applied Physics. 2020 ; 127( 21): 215104-1-215104-7.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/5.0004395
    • Vancouver

      Santos DP, Pelissari PIBGB, Mello RF de, Pandolfelli VC. Estimating the thermal insulating performance of multi-component refractory ceramic systems based on a machine learning surrogate model framework [Internet]. Journal of Applied Physics. 2020 ; 127( 21): 215104-1-215104-7.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/5.0004395
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

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      OCHOA, Diego A. et al. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, v. 125, n. Ja 2019, p. 024101-1-024101-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5067243. Acesso em: 29 jul. 2024.
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      Ochoa, D. A., Casals, J. A., Venet, M., M'Peko, J. C., & García, J. E. (2019). Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, 125( Ja 2019), 024101-1-024101-8. doi:10.1063/1.5067243
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      Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.5067243
    • Vancouver

      Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.5067243
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

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      SANTA-ROSA, Washington et al. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, v. 125, n. 7, p. 075107-1-075107-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5063320. Acesso em: 29 jul. 2024.
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      Santa-Rosa, W., Silva Jr., P. S. da, M'Peko, J. C., Amorín, H., Algueró, M., & Venet, M. (2019). Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, 125( 7), 075107-1-075107-8. doi:10.1063/1.5063320
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      Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.5063320
    • Vancouver

      Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.5063320
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

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      TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 29 jul. 2024.
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      Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
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      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4942854
    • Vancouver

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4942854
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS

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      MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 29 jul. 2024.
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      Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
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      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4918544
    • Vancouver

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4918544
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS

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      PUSEP, Yuri A. et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 29 jul. 2024.
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      Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
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      Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4803494
    • Vancouver

      Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4803494
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FERRO, MATERIAIS CERÂMICOS, ESPECTROSCOPIA DE RAIO X

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      MESQUITA, A. et al. Fe K-edge X-ray absorption spectroscopy study of Pb(Fe2/3W1/3)O3-PbTiO3 multiferroic ceramics. Journal of Applied Physics, v. 113, n. 11, p. 114104-1-114104-5, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4795505. Acesso em: 29 jul. 2024.
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      Mesquita, A., Fraygola, B. M., Mastelaro, V. R., & Eiras, J. A. (2013). Fe K-edge X-ray absorption spectroscopy study of Pb(Fe2/3W1/3)O3-PbTiO3 multiferroic ceramics. Journal of Applied Physics, 113( 11), 114104-1-114104-5. doi:10.1063/1.4795505
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      Mesquita A, Fraygola BM, Mastelaro VR, Eiras JA. Fe K-edge X-ray absorption spectroscopy study of Pb(Fe2/3W1/3)O3-PbTiO3 multiferroic ceramics [Internet]. Journal of Applied Physics. 2013 ; 113( 11): 114104-1-114104-5.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4795505
    • Vancouver

      Mesquita A, Fraygola BM, Mastelaro VR, Eiras JA. Fe K-edge X-ray absorption spectroscopy study of Pb(Fe2/3W1/3)O3-PbTiO3 multiferroic ceramics [Internet]. Journal of Applied Physics. 2013 ; 113( 11): 114104-1-114104-5.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4795505
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, ELÉTRONS, DIFRAÇÃO POR RAIOS X, ESTRUTURA ELETRÔNICA

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      TEODORO, M. D. et al. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, v. 112, n. 1, p. 014319-1-014319-9, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4733964. Acesso em: 29 jul. 2024.
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      Teodoro, M. D., Malachias, A., Oliveira, V. L., Cesar, D. F., Richard, V. L., Marques, G. E., et al. (2012). In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, 112( 1), 014319-1-014319-9. doi:10.1063/1.4733964
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      Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Júnior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4733964
    • Vancouver

      Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Júnior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4733964
  • Source: Journal of Applied Physics. Conference titles: International Conference on the Study of Matter at Extreme Conditions - SMEC. Unidade: IFSC

    Subjects: OXIGÊNIO (FLUXO), ÓPTICA, FILMES FINOS

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      PEREIRA, André L. J. et al. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.4724334. Acesso em: 29 jul. 2024. , 2012
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      Pereira, A. L. J., Lisboa Filho, P. N., Acuña, J., Brandt, I. S., Pasa, A. A., Zanatta, A. R., et al. (2012). Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. doi:10.1063/1.4724334
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      Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4724334
    • Vancouver

      Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.4724334
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA

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      PUSEP, Yuri A. et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 29 jul. 2024.
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      Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
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      Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3646365
    • Vancouver

      Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3646365
  • Source: Journal of Applied Physics. Unidade: EESC

    Subjects: VIDROS METÁLICOS, TOPOLOGIA

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      GARGARELLA, Piter et al. Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity. Journal of Applied Physics, v. 109, p. 093509(1-7), 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3563099. Acesso em: 29 jul. 2024.
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      Gargarella, P., Oliveira, M. F. de, Kiminami, C. S., Pauly, S., Kühn, U., Bolfarini, C., et al. (2011). Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity. Journal of Applied Physics, 109, 093509(1-7). doi:10.1063/1.3563099
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      Gargarella P, Oliveira MF de, Kiminami CS, Pauly S, Kühn U, Bolfarini C, Botta Filho WJ, Eckert J. Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity [Internet]. Journal of Applied Physics. 2011 ; 109 093509(1-7).[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3563099
    • Vancouver

      Gargarella P, Oliveira MF de, Kiminami CS, Pauly S, Kühn U, Bolfarini C, Botta Filho WJ, Eckert J. Prediction of good glass formers in the 'AL'-'NI'-'LA' and 'AL'-'NI'-'GD' systems using topological instability and electronegativity [Internet]. Journal of Applied Physics. 2011 ; 109 093509(1-7).[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3563099
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, MAGNETISMO (PROPRIEDADES), FILMES FINOS

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      FERRI, F. A. et al. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, v. 108, n. 11, p. 113922-1-113922-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3520661. Acesso em: 29 jul. 2024.
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      Ferri, F. A., Silva, M. de A. P. da, Zanatta, A. R., Varella, A. L. S., & Oliveira, A. J. A. (2010). Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, 108( 11), 113922-1-113922-5. doi:10.1063/1.3520661
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      Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3520661
    • Vancouver

      Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3520661
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, PROPRIEDADES DOS MATERIAIS, FERROELETRICIDADE, ABSORÇÃO DA LUZ, ESTADO SÓLIDO (FASES), DIFRAÇÃO POR RAIOS X

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      MASTELARO, Valmor Roberto et al. Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics. Journal of Applied Physics, v. 107, n. 11, p. 114103-1-114103-9, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3431024. Acesso em: 29 jul. 2024.
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      Mastelaro, V. R., Mascarenhas, Y. P., Neves, P. P., Mir, M., Doriguetto, A. C., Michalowicz, A., et al. (2010). Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics. Journal of Applied Physics, 107( 11), 114103-1-114103-9. doi:10.1063/1.3431024
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      Mastelaro VR, Mascarenhas YP, Neves PP, Mir M, Doriguetto AC, Michalowicz A, Moscovici J, Lente MH, Eiras JA. Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics [Internet]. Journal of Applied Physics. 2010 ; 107( 11): 114103-1-114103-9.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3431024
    • Vancouver

      Mastelaro VR, Mascarenhas YP, Neves PP, Mir M, Doriguetto AC, Michalowicz A, Moscovici J, Lente MH, Eiras JA. Spontaneous long and short-range ferroelectric ordering in 'Pb IND.0.55''La IND.0.30'Ti'O IND.3' ceramics [Internet]. Journal of Applied Physics. 2010 ; 107( 11): 114103-1-114103-9.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3431024
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SUPERCONDUTIVIDADE, ELETROMAGNETISMO, ELETRODINÂMICA, ELETRICIDADE E ELETRÔNICA

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      SERGEENKOV, S. et al. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, v. 107, n. 9, p. 096102-1-096102-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3407566. Acesso em: 29 jul. 2024.
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      Sergeenkov, S., Rivera, V. A. G., Marega Júnior, E., & Moreira, F. M. A. (2010). Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, 107( 9), 096102-1-096102-3. doi:10.1063/1.3407566
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      Sergeenkov S, Rivera VAG, Marega Júnior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3407566
    • Vancouver

      Sergeenkov S, Rivera VAG, Marega Júnior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3407566
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, NANOTECNOLOGIA, ESTRUTURA ELETRÔNICA, OXIDAÇÃO, FILMES FINOS, SEMICONDUTORES

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      BERENGUE, O. M. et al. Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure. Journal of Applied Physics, v. 107, n. 3, p. 033717-1-033717-4, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3294613. Acesso em: 29 jul. 2024.
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      Berengue, O. M., Simon, R. A., Chiquito, A. J., Dalmaschio, C. J., Leite, E. R., Guerreiro, H. A., & Guimarães, F. E. G. (2010). Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure. Journal of Applied Physics, 107( 3), 033717-1-033717-4. doi:10.1063/1.3294613
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      Berengue OM, Simon RA, Chiquito AJ, Dalmaschio CJ, Leite ER, Guerreiro HA, Guimarães FEG. Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure [Internet]. Journal of Applied Physics. 2010 ; 107( 3): 033717-1-033717-4.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3294613
    • Vancouver

      Berengue OM, Simon RA, Chiquito AJ, Dalmaschio CJ, Leite ER, Guerreiro HA, Guimarães FEG. Semiconducting 'Sn IND. 3''O IND.4' nanobelts: growth and electronic structure [Internet]. Journal of Applied Physics. 2010 ; 107( 3): 033717-1-033717-4.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3294613
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN

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      MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 29 jul. 2024.
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      Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
    • NLM

      Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3269724
    • Vancouver

      Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3269724
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, RESSONÂNCIA PARAMAGNÉTICA DE SPIN, FILMES FINOS, MECÂNICA QUÂNTICA, ENERGIA, DENSIDADE

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      MILANEZ, Juliana et al. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3'. Journal of Applied Physics, v. 106, n. 4, p. 043526-1-043526-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3190524. Acesso em: 29 jul. 2024.
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      Milanez, J., Figueiredo, A. T., Lázaro, S., Longo, V. M., Erlo, R., Mastelaro, V. R., et al. (2009). The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3'. Journal of Applied Physics, 106( 4), 043526-1-043526-7. doi:10.1063/1.3190524
    • NLM

      Milanez J, Figueiredo AT, Lázaro S, Longo VM, Erlo R, Mastelaro VR, Franco RWA, Longo E, Varela JA. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' [Internet]. Journal of Applied Physics. 2009 ; 106( 4): 043526-1-043526-7.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3190524
    • Vancouver

      Milanez J, Figueiredo AT, Lázaro S, Longo VM, Erlo R, Mastelaro VR, Franco RWA, Longo E, Varela JA. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' [Internet]. Journal of Applied Physics. 2009 ; 106( 4): 043526-1-043526-7.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3190524
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CRISTALOGRAFIA, MATERIAIS CERÂMICOS, ESPECTROSCOPIA RAMAN, DIFRAÇÃO POR RAIOS X, BÁRIO, SOLUÇÕES, ZIRCÔNIO

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      MASTELARO, Valmor Roberto et al. Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques. Journal of Applied Physics, v. 105, n. 3, p. 033508-1-033508-6, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3073942. Acesso em: 29 jul. 2024.
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      Mastelaro, V. R., Mesquita, A., Neves, P. P., Michalowicz, A., Bounif, M., Pizani, P. S., et al. (2009). Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques. Journal of Applied Physics, 105( 3), 033508-1-033508-6. doi:10.1063/1.3073942
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      Mastelaro VR, Mesquita A, Neves PP, Michalowicz A, Bounif M, Pizani PS, Joya MR, Eiras JA. Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques [Internet]. Journal of Applied Physics. 2009 ; 105( 3): 033508-1-033508-6.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3073942
    • Vancouver

      Mastelaro VR, Mesquita A, Neves PP, Michalowicz A, Bounif M, Pizani PS, Joya MR, Eiras JA. Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques [Internet]. Journal of Applied Physics. 2009 ; 105( 3): 033508-1-033508-6.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.3073942
  • Source: Journal of Applied Physics. Unidade: IQSC

    Assunto: QUÍMICA ANALÍTICA

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      PONTES, F. M. et al. Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics, v. 104, n. 1, p. 014107-1, 2008Tradução . . Acesso em: 29 jul. 2024.
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      Pontes, F. M., Santos, L. S., Pontes, D. S. L., Longo, E., Claro Neto, S., Leite, E. R., et al. (2008). Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics, 104( 1), 014107-1.
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      Pontes FM, Santos LS, Pontes DSL, Longo E, Claro Neto S, Leite ER, Chiquito AJ, Pizani PS. Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics. 2008 ; 104( 1): 014107-1.[citado 2024 jul. 29 ]
    • Vancouver

      Pontes FM, Santos LS, Pontes DSL, Longo E, Claro Neto S, Leite ER, Chiquito AJ, Pizani PS. Study of phase transition in (Pb,Ba)Ti'OIND.3' thin films. Journal of Applied Physics. 2008 ; 104( 1): 014107-1.[citado 2024 jul. 29 ]
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ÓPTICA (PROPRIEDADES), NANOTECNOLOGIA

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      LONGO, V. M. et al. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach. Journal of Applied Physics, v. 104, n. 2, p. 023515-1-023515-11, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2956741. Acesso em: 29 jul. 2024.
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      Longo, V. M., Figueiredo, A. T., Lázaro, S. de, Gurgel, M. F., Costa, M. G. S., Santos, C. O. P., et al. (2008). Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach. Journal of Applied Physics, 104( 2), 023515-1-023515-11. doi:10.1063/1.2956741
    • NLM

      Longo VM, Figueiredo AT, Lázaro S de, Gurgel MF, Costa MGS, Santos COP, Varela JA, Longo E, Mastelaro VR, De Vicente FS, Hernandes AC, Franco RWA. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach [Internet]. Journal of Applied Physics. 2008 ; 104( 2): 023515-1-023515-11.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.2956741
    • Vancouver

      Longo VM, Figueiredo AT, Lázaro S de, Gurgel MF, Costa MGS, Santos COP, Varela JA, Longo E, Mastelaro VR, De Vicente FS, Hernandes AC, Franco RWA. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach [Internet]. Journal of Applied Physics. 2008 ; 104( 2): 023515-1-023515-11.[citado 2024 jul. 29 ] Available from: https://doi.org/10.1063/1.2956741

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