ReP USP - Resultado da busca

Trabalho de evento-resumo
Electronic properties of polytypic superlattices (2011)
Faria Junior, P. E.; Sipahi, Guilherme Matos
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: NANOTECNOLOGIA, CRESCIMENTO DE CRISTAIS, ÓPTICA (PROPRIEDADES;ESTUDO)
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ABNT
FARIA JUNIOR, P. E. e SIPAHI, Guilherme Matos. Electronic properties of polytypic superlattices. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 08 out. 2025.
APA
Faria Junior, P. E., & Sipahi, G. M. (2011). Electronic properties of polytypic superlattices. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Faria Junior PE, Sipahi GM. Electronic properties of polytypic superlattices. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Vancouver
Faria Junior PE, Sipahi GM. Electronic properties of polytypic superlattices. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Investigation of vertical transport in thin layers based on group III-V semiconductors (2011)
Santos, O. F. P.; Rodrigues, S. C. P.; Sipahi, Guilherme Matos ; Scolfaro, L. M. R.; Silva Junior, E. F.
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: SEMICONDUTORES, FENÔMENOS DE TRANSPORTE, FILMES FINOS
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ABNT
SANTOS, O. F. P. et al. Investigation of vertical transport in thin layers based on group III-V semiconductors. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 08 out. 2025.
APA
Santos, O. F. P., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Silva Junior, E. F. (2011). Investigation of vertical transport in thin layers based on group III-V semiconductors. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Santos OFP, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Silva Junior EF. Investigation of vertical transport in thin layers based on group III-V semiconductors. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Vancouver
Santos OFP, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Silva Junior EF. Investigation of vertical transport in thin layers based on group III-V semiconductors. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Study of localized states in disordered superlattices embedded in wide AlGaAs parabolic well (2011)
Santos, L. Fernandes dos; Pusep, Yuri A ; Bakarovi, A.; Toropov, A.
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: FILMES FINOS, ÓPTICA (PROPRIEDADES), EMISSÃO DA LUZ, LASER
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ABNT
SANTOS, L. Fernandes dos et al. Study of localized states in disordered superlattices embedded in wide AlGaAs parabolic well. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 08 out. 2025.
APA
Santos, L. F. dos, Pusep, Y. A., Bakarovi, A., & Toropov, A. (2011). Study of localized states in disordered superlattices embedded in wide AlGaAs parabolic well. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Santos LF dos, Pusep YA, Bakarovi A, Toropov A. Study of localized states in disordered superlattices embedded in wide AlGaAs parabolic well. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Vancouver
Santos LF dos, Pusep YA, Bakarovi A, Toropov A. Study of localized states in disordered superlattices embedded in wide AlGaAs parabolic well. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields (2011)
Teodoro, M. D.; Campo Junior, V. L.; López-Richard, V.; Marega Junior, Euclydes ; Marques, G. E.; Gobato, Y. Galvão; Iikawa, F.; Brasil, M. J. S. P.; AbuWaard, Z. Y.; Dorogan, V. G.; Mazur, Yu I.; Benamara, M.; Salamo, G. J.
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA, SEMICONDUTORES
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ABNT
TEODORO, M. D. et al. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 08 out. 2025.
APA
Teodoro, M. D., Campo Junior, V. L., López-Richard, V., Marega Junior, E., Marques, G. E., Gobato, Y. G., et al. (2011). Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Teodoro MD, Campo Junior VL, López-Richard V, Marega Junior E, Marques GE, Gobato YG, Iikawa F, Brasil MJSP, AbuWaard ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Vancouver
Teodoro MD, Campo Junior VL, López-Richard V, Marega Junior E, Marques GE, Gobato YG, Iikawa F, Brasil MJSP, AbuWaard ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well (2011)
Santos, L. Fernandes dos; Pusep, Yuri A ; Bakarov, A.; Toropov, A.
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: EMISSÃO DA LUZ, POÇOS QUÂNTICOS, FILMES FINOS, EFEITO HALL
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ABNT
SANTOS, L. Fernandes dos et al. Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 08 out. 2025.
APA
Santos, L. F. dos, Pusep, Y. A., Bakarov, A., & Toropov, A. (2011). Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Santos LF dos, Pusep YA, Bakarov A, Toropov A. Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Vancouver
Santos LF dos, Pusep YA, Bakarov A, Toropov A. Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well. Book of Abstracts. 2011 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices (1995)
Pusep, Yuri A ; Silva, S.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 08 out. 2025.
APA
Pusep, Y. A., Silva, S., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2025 out. 08 ]
Vancouver
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures (1995)
Guimarães, Francisco Eduardo Gontijo ; Lubyshev, D.; Chitta, V. A.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 08 out. 2025.
APA
Guimarães, F. E. G., Lubyshev, D., Chitta, V. A., & Basmaji, P. (1995). Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Guimarães FEG, Lubyshev D, Chitta VA, Basmaji P. Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. Abstracts. 1995 ;[citado 2025 out. 08 ]
Vancouver
Guimarães FEG, Lubyshev D, Chitta VA, Basmaji P. Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures. Abstracts. 1995 ;[citado 2025 out. 08 ]
Trabalho de evento-resumo
Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, Gennady ; Lubyshev, D. I.; Silva, S. W.
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 08 out. 2025.
APA
Basmaji, P., Gusev, G., Lubyshev, D. I., & Silva, S. W. (1995). Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2025 out. 08 ]
Vancouver
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2025 out. 08 ]

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