Source: Micro and Nanostructures. Unidade: IF
Assunto: SEMICONDUTORES
ABNT
CANTALICE, T. F. e URAHATA, S. M. e QUIVY, A. A. Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation. Micro and Nanostructures, 2026Tradução . . Disponível em: https://doi.org/10.1016/j.micrna.2026.208567. Acesso em: 25 jan. 2026.APA
Cantalice, T. F., Urahata, S. M., & Quivy, A. A. (2026). Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation. Micro and Nanostructures. doi:https://doi.org/10.1016/j.micrna.2026.208567NLM
Cantalice TF, Urahata SM, Quivy AA. Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation [Internet]. Micro and Nanostructures. 2026 ;[citado 2026 jan. 25 ] Available from: https://doi.org/10.1016/j.micrna.2026.208567Vancouver
Cantalice TF, Urahata SM, Quivy AA. Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation [Internet]. Micro and Nanostructures. 2026 ;[citado 2026 jan. 25 ] Available from: https://doi.org/10.1016/j.micrna.2026.208567
