Filtros : "Materials Science in Semiconductor Processing" Removido: "Mastelaro, Valmor Roberto" Limpar

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  • Source: Materials Science in Semiconductor Processing. Unidade: IQ

    Assunto: CÉLULAS SOLARES

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      KHALID, Muhammad et al. Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores. Materials Science in Semiconductor Processing, v. 182, p. 1-16 art. 108695, 2024Tradução . . Disponível em: https://dx.doi.org/10.1016/j.mssp.2024.108695. Acesso em: 17 jun. 2025.
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      khalid, M., Zafar, M., Shafiq, I., Braga, A. A. C., Haroon, M., & Ahamad, T. (2024). Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores. Materials Science in Semiconductor Processing, 182, 1-16 art. 108695. doi:10.1016/j.mssp.2024.108695
    • NLM

      khalid M, Zafar M, Shafiq I, Braga AAC, Haroon M, Ahamad T. Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores [Internet]. Materials Science in Semiconductor Processing. 2024 ; 182 1-16 art. 108695.[citado 2025 jun. 17 ] Available from: https://dx.doi.org/10.1016/j.mssp.2024.108695
    • Vancouver

      khalid M, Zafar M, Shafiq I, Braga AAC, Haroon M, Ahamad T. Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores [Internet]. Materials Science in Semiconductor Processing. 2024 ; 182 1-16 art. 108695.[citado 2025 jun. 17 ] Available from: https://dx.doi.org/10.1016/j.mssp.2024.108695
  • Source: Materials Science in Semiconductor Processing. Unidades: EEL, IQSC

    Subjects: FOTOCATÁLISE, ZINCO, BISMUTO

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      MORAES, Nícolas Perciani de et al. Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent. Materials Science in Semiconductor Processing, v. 177, p. 108412, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2024.108412. Acesso em: 17 jun. 2025.
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      Moraes, N. P. de, Oliveira, M. F. de, Bacani, R., Rocha, R. da S., Lanza, M. R. de V., & Rodrigues, L. A. (2024). Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent. Materials Science in Semiconductor Processing, 177, 108412. doi:10.1016/j.mssp.2024.108412
    • NLM

      Moraes NP de, Oliveira MF de, Bacani R, Rocha R da S, Lanza MR de V, Rodrigues LA. Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent [Internet]. Materials Science in Semiconductor Processing. 2024 ; 177 108412.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2024.108412
    • Vancouver

      Moraes NP de, Oliveira MF de, Bacani R, Rocha R da S, Lanza MR de V, Rodrigues LA. Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent [Internet]. Materials Science in Semiconductor Processing. 2024 ; 177 108412.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2024.108412
  • Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS

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      BRAGA, Osvaldo de Melo et al. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent. Materials Science in Semiconductor Processing, v. 154, p. 107200-1-107200-7, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2022.107200. Acesso em: 17 jun. 2025.
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      Braga, O. de M., Delfino, C. A., Kawabata, R. M. S., Pinto, L. D., Vieira, G. S., Pires, M. P., et al. (2023). Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent. Materials Science in Semiconductor Processing, 154, 107200-1-107200-7. doi:10.1016/j.mssp.2022.107200
    • NLM

      Braga O de M, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Junior E, Carlin JA, Krishna S. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent [Internet]. Materials Science in Semiconductor Processing. 2023 ; 154 107200-1-107200-7.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2022.107200
    • Vancouver

      Braga O de M, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Junior E, Carlin JA, Krishna S. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent [Internet]. Materials Science in Semiconductor Processing. 2023 ; 154 107200-1-107200-7.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2022.107200
  • Source: Materials Science in Semiconductor Processing. Unidade: IQSC

    Subjects: ELETROQUÍMICA, FILMES FINOS

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      LEMOS, Rafaela M.J. et al. Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties. Materials Science in Semiconductor Processing, v. no 2021, p. 105995, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2021.105995. Acesso em: 17 jun. 2025.
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      Lemos, R. M. J., Balboni, R. D. C., Cholant, C. M., Azevedo, C. F., Pawlicka, A., Gündel, A., et al. (2021). Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties. Materials Science in Semiconductor Processing, no 2021, 105995. doi:10.1016/j.mssp.2021.105995
    • NLM

      Lemos RMJ, Balboni RDC, Cholant CM, Azevedo CF, Pawlicka A, Gündel A, Flores WH, Avellaneda CO. Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties [Internet]. Materials Science in Semiconductor Processing. 2021 ; no 2021 105995.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2021.105995
    • Vancouver

      Lemos RMJ, Balboni RDC, Cholant CM, Azevedo CF, Pawlicka A, Gündel A, Flores WH, Avellaneda CO. Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties [Internet]. Materials Science in Semiconductor Processing. 2021 ; no 2021 105995.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2021.105995
  • Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: SÍNTESE QUÍMICA, PROPRIEDADES DOS MATERIAIS

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      SILVA, Gabriela N. et al. Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light. Materials Science in Semiconductor Processing, v. No 2021, p. 106064-1-106064-12, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2021.106064. Acesso em: 17 jun. 2025.
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      Silva, G. N., Martins, T. A., Nogueira, I. C., Santos, R. k., Siu Li, M., Longo, E., & Botelho, G. (2021). Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light. Materials Science in Semiconductor Processing, No 2021, 106064-1-106064-12. doi:10.1016/j.mssp.2021.106064
    • NLM

      Silva GN, Martins TA, Nogueira IC, Santos R k., Siu Li M, Longo E, Botelho G. Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light [Internet]. Materials Science in Semiconductor Processing. 2021 ; No 2021 106064-1-106064-12.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2021.106064
    • Vancouver

      Silva GN, Martins TA, Nogueira IC, Santos R k., Siu Li M, Longo E, Botelho G. Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light [Internet]. Materials Science in Semiconductor Processing. 2021 ; No 2021 106064-1-106064-12.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2021.106064
  • Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: ZINCO, ÍNDIO (ELEMENTO QUÍMICO), DIFRAÇÃO POR RAIOS X, FOTOLUMINESCÊNCIA, TECNOLOGIA DE MICRO-ONDAS

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      TAVARES, M. T. S. et al. Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method. Materials Science in Semiconductor Processing, v. No 2014, p. 1036-1041, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2014.08.034. Acesso em: 17 jun. 2025.
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      Tavares, M. T. S., Lovisa, L. X., Araújo, V. D., Longo, E., Siu Li, M., Nascimento, R. M., et al. (2014). Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method. Materials Science in Semiconductor Processing, No 2014, 1036-1041. doi:10.1016/j.mssp.2014.08.034
    • NLM

      Tavares MTS, Lovisa LX, Araújo VD, Longo E, Siu Li M, Nascimento RM, Paskocimas CA, Bomio MRD, Motta FV. Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method [Internet]. Materials Science in Semiconductor Processing. 2014 ; No 2014 1036-1041.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2014.08.034
    • Vancouver

      Tavares MTS, Lovisa LX, Araújo VD, Longo E, Siu Li M, Nascimento RM, Paskocimas CA, Bomio MRD, Motta FV. Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method [Internet]. Materials Science in Semiconductor Processing. 2014 ; No 2014 1036-1041.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2014.08.034
  • Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: FOTÔNICA, CRESCIMENTO DE CRISTAIS

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      ARAÚJO, V. D. et al. Effect of polyvinyl alcohol on the shape, photoluminescence and photocatalytic properties of PbMoO4 microcrystals. Materials Science in Semiconductor Processing, v. 26, p. 425-430, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2014.05.027. Acesso em: 17 jun. 2025.
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      Araújo, V. D., Tranquilin, R. L., Motta, F. V., Paskocimas, C. A., Bernardi, M. I. B., Cavalcante, L. S., et al. (2014). Effect of polyvinyl alcohol on the shape, photoluminescence and photocatalytic properties of PbMoO4 microcrystals. Materials Science in Semiconductor Processing, 26, 425-430. doi:10.1016/j.mssp.2014.05.027
    • NLM

      Araújo VD, Tranquilin RL, Motta FV, Paskocimas CA, Bernardi MIB, Cavalcante LS, Andres J, Longo E, Bomio MRD. Effect of polyvinyl alcohol on the shape, photoluminescence and photocatalytic properties of PbMoO4 microcrystals [Internet]. Materials Science in Semiconductor Processing. 2014 ; 26 425-430.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2014.05.027
    • Vancouver

      Araújo VD, Tranquilin RL, Motta FV, Paskocimas CA, Bernardi MIB, Cavalcante LS, Andres J, Longo E, Bomio MRD. Effect of polyvinyl alcohol on the shape, photoluminescence and photocatalytic properties of PbMoO4 microcrystals [Internet]. Materials Science in Semiconductor Processing. 2014 ; 26 425-430.[citado 2025 jun. 17 ] Available from: https://doi.org/10.1016/j.mssp.2014.05.027
  • Source: Materials Science in Semiconductor Processing. Unidade: IF

    Assunto: ENGENHARIA ELÉTRICA

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      DABROWSKI, J. et al. Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing, v. 3, n. 1-2, p. 85-89, 2000Tradução . . Acesso em: 17 jun. 2025.
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      Dabrowski, J., Mussig, H. J., Baierle, R. J., Caldas, M. J., & Zavodinsky, V. (2000). Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing, 3( 1-2), 85-89.
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      Dabrowski J, Mussig HJ, Baierle RJ, Caldas MJ, Zavodinsky V. Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing. 2000 ; 3( 1-2): 85-89.[citado 2025 jun. 17 ]
    • Vancouver

      Dabrowski J, Mussig HJ, Baierle RJ, Caldas MJ, Zavodinsky V. Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing. 2000 ; 3( 1-2): 85-89.[citado 2025 jun. 17 ]

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