Photoluminescence of a-GeN alloys doped with different rare-earth ions (2003)
Source: Abstract Book and Final Program. Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors : Science and Technology - ICAMS. Unidade: IFSC
Subjects: SEMICONDUTORES, LASER, FOTOLUMINESCÊNCIA, FILMES FINOS, TERRAS RARAS
ABNT
RIBEIRO, C. T. M. e ZANATTA, Antonio Ricardo. Photoluminescence of a-GeN alloys doped with different rare-earth ions. 2003, Anais.. Campinas: Instituto de Física de São Carlos, Universidade de São Paulo, 2003. . Acesso em: 04 nov. 2025.APA
Ribeiro, C. T. M., & Zanatta, A. R. (2003). Photoluminescence of a-GeN alloys doped with different rare-earth ions. In Abstract Book and Final Program. Campinas: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Ribeiro CTM, Zanatta AR. Photoluminescence of a-GeN alloys doped with different rare-earth ions. Abstract Book and Final Program. 2003 ;[citado 2025 nov. 04 ]Vancouver
Ribeiro CTM, Zanatta AR. Photoluminescence of a-GeN alloys doped with different rare-earth ions. Abstract Book and Final Program. 2003 ;[citado 2025 nov. 04 ]
