H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys

H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys (2003)

Authors:
USP affiliated authors: MULATO, MARCELO - FFCLRP ; ZANATTA, ANTONIO RICARDO - IFSC
Unidades: FFCLRP; IFSC
Subjects: CRISTALIZAÇÃO; SEMICONDUTORES; LASER; CRISTALOGRAFIA
Language: Inglês
Imprenta:
- Publisher place: Campinas
- Date published: 2003
Source:
- Título: Abstract Book and Final Program
Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors : Science and Technology - ICAMS

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ABNT

MULATO, M. et al. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. 2003, Anais.. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, 2003. . Acesso em: 25 fev. 2026.
APA

Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2003). H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. In Abstract Book and Final Program. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo.
NLM

Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2026 fev. 25 ]
Vancouver

Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2026 fev. 25 ]