H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys (2003)
- Authors:
- USP affiliated authors: MULATO, MARCELO - FFCLRP ; ZANATTA, ANTONIO RICARDO - IFSC
- Unidades: FFCLRP; IFSC
- Subjects: CRISTALIZAÇÃO; SEMICONDUTORES; LASER; CRISTALOGRAFIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstract Book and Final Program
- Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors : Science and Technology - ICAMS
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ABNT
MULATO, M. et al. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. 2003, Anais.. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, 2003. . Acesso em: 18 set. 2024. -
APA
Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2003). H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. In Abstract Book and Final Program. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo. -
NLM
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2024 set. 18 ] -
Vancouver
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2024 set. 18 ] - Laser interference structuring of a-GeN for the production of optical diffraction gratings
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