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Artigo de periodico
Giant microwave photo-conductance of a tunnel point contact with a bridged gate (2015)
Levin, A. D.; Kvon, Z. D.; Bakarov, A. K.; Rodyakina, E. E.; Latyshev, A. V.; Mikhailov, S. A.; Dvoretsky, S. A.; Savostianova, N. A.; Gusev, Gennady
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: CAMPO MAGNÉTICO, MAGNETISMO TRANSITÓRIO
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ABNT
LEVIN, A. D. et al. Giant microwave photo-conductance of a tunnel point contact with a bridged gate. APPLIED PHYSICS LETTERS, v. 107, n. 7, p. 072112, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4928733. Acesso em: 25 maio 2024.
APA
Levin, A. D., Kvon, Z. D., Bakarov, A. K., Rodyakina, E. E., Latyshev, A. V., Mikhailov, S. A., et al. (2015). Giant microwave photo-conductance of a tunnel point contact with a bridged gate. APPLIED PHYSICS LETTERS, 107( 7), 072112. doi:10.1063/1.4928733
NLM
Levin AD, Kvon ZD, Bakarov AK, Rodyakina EE, Latyshev AV, Mikhailov SA, Dvoretsky SA, Savostianova NA, Gusev G. Giant microwave photo-conductance of a tunnel point contact with a bridged gate [Internet]. APPLIED PHYSICS LETTERS. 2015 ; 107( 7): 072112.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4928733
Vancouver
Levin AD, Kvon ZD, Bakarov AK, Rodyakina EE, Latyshev AV, Mikhailov SA, Dvoretsky SA, Savostianova NA, Gusev G. Giant microwave photo-conductance of a tunnel point contact with a bridged gate [Internet]. APPLIED PHYSICS LETTERS. 2015 ; 107( 7): 072112.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4928733
Artigo de periodico
Spin caloritronics in graphene with 'MN' (2014)
Torres, Alberto ; Lima, Matheus P ; Fazzio, Adalberto ; Silva, Antonio Jose Roque da
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: SPIN, TERMOELETRICIDADE
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ABNT
TORRES, Alberto et al. Spin caloritronics in graphene with 'MN'. APPLIED PHYSICS LETTERS, v. fe 2014, n. 7, p. 072412, 2014Tradução . . Disponível em: http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866184. Acesso em: 25 maio 2024.
APA
Torres, A., Lima, M. P., Fazzio, A., & Silva, A. J. R. da. (2014). Spin caloritronics in graphene with 'MN'. APPLIED PHYSICS LETTERS, fe 2014( 7), 072412. Recuperado de http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866184
NLM
Torres A, Lima MP, Fazzio A, Silva AJR da. Spin caloritronics in graphene with 'MN' [Internet]. APPLIED PHYSICS LETTERS. 2014 ; fe 2014( 7): 072412.[citado 2024 maio 25 ] Available from: http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866184
Vancouver
Torres A, Lima MP, Fazzio A, Silva AJR da. Spin caloritronics in graphene with 'MN' [Internet]. APPLIED PHYSICS LETTERS. 2014 ; fe 2014( 7): 072412.[citado 2024 maio 25 ] Available from: http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866184
Artigo de periodico
Measurement of the impedance of aqueous solutions of 'K''CL': an analysis using an extension of the poisson-nernst-planck model (2014)
Duarte, Alexsander Ramos; Batalioto, Fernando ; Figueiredo Neto, Antonio Martins
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: ESPECTROSCOPIA
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ABNT
DUARTE, Alexsander Ramos e BATALIOTO, Fernando e FIGUEIREDO NETO, Antonio Martins. Measurement of the impedance of aqueous solutions of 'K''CL': an analysis using an extension of the poisson-nernst-planck model. APPLIED PHYSICS LETTERS, v. 105, n. 2, p. 022901, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4890386. Acesso em: 25 maio 2024.
APA
Duarte, A. R., Batalioto, F., & Figueiredo Neto, A. M. (2014). Measurement of the impedance of aqueous solutions of 'K''CL': an analysis using an extension of the poisson-nernst-planck model. APPLIED PHYSICS LETTERS, 105( 2), 022901. doi:10.1063/1.4890386
NLM
Duarte AR, Batalioto F, Figueiredo Neto AM. Measurement of the impedance of aqueous solutions of 'K''CL': an analysis using an extension of the poisson-nernst-planck model [Internet]. APPLIED PHYSICS LETTERS. 2014 ; 105( 2): 022901.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4890386
Vancouver
Duarte AR, Batalioto F, Figueiredo Neto AM. Measurement of the impedance of aqueous solutions of 'K''CL': an analysis using an extension of the poisson-nernst-planck model [Internet]. APPLIED PHYSICS LETTERS. 2014 ; 105( 2): 022901.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4890386
Artigo de periodico
Systematic study of doping dependence on linear magnetoresistance in p-'PB''TE' (2014)
Schneider, J. M.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.; Chitta, Valmir Antonio ; Oliveira Junior, Nei Fernandes de
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: SPIN, QUARK
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ABNT
SCHNEIDER, J. M. et al. Systematic study of doping dependence on linear magnetoresistance in p-'PB''TE'. APPLIED PHYSICS LETTERS, v. 105, n. 16, p. 162108, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4900486. Acesso em: 25 maio 2024.
APA
Schneider, J. M., Peres, M. L., Castro, S. de, Soares, D. A. W., Wiedmann, S., Zeitler, U., et al. (2014). Systematic study of doping dependence on linear magnetoresistance in p-'PB''TE'. APPLIED PHYSICS LETTERS, 105( 16), 162108. doi:10.1063/1.4900486
NLM
Schneider JM, Peres ML, Castro S de, Soares DAW, Wiedmann S, Zeitler U, Abramof E, Rappl PHO, Mengui UA, Chitta VA, Oliveira Junior NF de. Systematic study of doping dependence on linear magnetoresistance in p-'PB''TE' [Internet]. APPLIED PHYSICS LETTERS. 2014 ; 105( 16): 162108.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4900486
Vancouver
Schneider JM, Peres ML, Castro S de, Soares DAW, Wiedmann S, Zeitler U, Abramof E, Rappl PHO, Mengui UA, Chitta VA, Oliveira Junior NF de. Systematic study of doping dependence on linear magnetoresistance in p-'PB''TE' [Internet]. APPLIED PHYSICS LETTERS. 2014 ; 105( 16): 162108.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4900486
Artigo de periodico
Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy (2013)
Gallardo-Hernandez, S.; Martinez-Velis, I.; Ramirez-Lopez, M.; Lopez-Lopez, M.; Kudriatsev, Y.; Escobosa-Echavarria, A.; Morelhão, Sergio Luiz
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
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ABNT
GALLARDO-HERNANDEZ, S. et al. Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy. APPLIED PHYSICS LETTERS, v. no2013, n. 19, p. 192113, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4829922. Acesso em: 25 maio 2024.
APA
Gallardo-Hernandez, S., Martinez-Velis, I., Ramirez-Lopez, M., Lopez-Lopez, M., Kudriatsev, Y., Escobosa-Echavarria, A., & Morelhão, S. L. (2013). Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy. APPLIED PHYSICS LETTERS, no2013( 19), 192113. doi:10.1063/1.4829922
NLM
Gallardo-Hernandez S, Martinez-Velis I, Ramirez-Lopez M, Lopez-Lopez M, Kudriatsev Y, Escobosa-Echavarria A, Morelhão SL. Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy [Internet]. APPLIED PHYSICS LETTERS. 2013 ; no2013( 19): 192113.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4829922
Vancouver
Gallardo-Hernandez S, Martinez-Velis I, Ramirez-Lopez M, Lopez-Lopez M, Kudriatsev Y, Escobosa-Echavarria A, Morelhão SL. Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy [Internet]. APPLIED PHYSICS LETTERS. 2013 ; no2013( 19): 192113.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4829922
Artigo de periodico
Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing (2012)
Keizer, J. G; Henriques, André Bohomoletz; Maia, A D B; Quivy, A. A.; Koenraad, P. M
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, FÍSICA DA MATÉRIA CONDENSADA
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ABNT
KEIZER, J. G et al. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, v. 101 24, p. 243113, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4770371. Acesso em: 25 maio 2024.
APA
Keizer, J. G., Henriques, A. B., Maia, A. D. B., Quivy, A. A., & Koenraad, P. M. (2012). Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, 101 24, 243113. doi:10.1063/1.4770371
NLM
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4770371
Vancouver
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.4770371
Artigo de periodico
Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots (2011)
Schwan, A; Maia, A D B; Quivy, A A; Henriques, A B
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SCHWAN, A et al. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots. APPLIED PHYSICS LETTERS, v. no2011, n. 22, p. 221914, 2011Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal. Acesso em: 25 maio 2024.
APA
Schwan, A., Maia, A. D. B., Quivy, A. A., & Henriques, A. B. (2011). Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots. APPLIED PHYSICS LETTERS, no2011( 22), 221914. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
NLM
Schwan A, Maia ADB, Quivy AA, Henriques AB. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ; no2011( 22): 221914.[citado 2024 maio 25 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
Vancouver
Schwan A, Maia ADB, Quivy AA, Henriques AB. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ; no2011( 22): 221914.[citado 2024 maio 25 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
Artigo de periodico
Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots (2011)
Schwan, A; Meiners, B M; Spatzek, S; Varwig, S; Yakovlev, D R; Bayer, M; Henriques, A B ; Quivy, A A ; Maia, A D B
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SCHWAN, A et al. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, v. 98, n. ju2011, p. 233102, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3588413. Acesso em: 25 maio 2024.
APA
Schwan, A., Meiners, B. M., Spatzek, S., Varwig, S., Yakovlev, D. R., Bayer, M., et al. (2011). Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, 98( ju2011), 233102. doi:10.1063/1.3588413
NLM
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3588413
Vancouver
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3588413
Artigo de periodico
Doping of graphene adsorbed on the a-'SI''O IND.2' surface (2011)
Miwa, R H; Schmidt, Tome M; Scopel, W L; Fazzio, A
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
MIWA, R H et al. Doping of graphene adsorbed on the a-'SI''O IND.2' surface. APPLIED PHYSICS LETTERS, v. 99, n. 16, p. 163108, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3653261. Acesso em: 25 maio 2024.
APA
Miwa, R. H., Schmidt, T. M., Scopel, W. L., & Fazzio, A. (2011). Doping of graphene adsorbed on the a-'SI''O IND.2' surface. APPLIED PHYSICS LETTERS, 99( 16), 163108. doi:10.1063/1.3653261
NLM
Miwa RH, Schmidt TM, Scopel WL, Fazzio A. Doping of graphene adsorbed on the a-'SI''O IND.2' surface [Internet]. APPLIED PHYSICS LETTERS. 2011 ;99( 16): 163108.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3653261
Vancouver
Miwa RH, Schmidt TM, Scopel WL, Fazzio A. Doping of graphene adsorbed on the a-'SI''O IND.2' surface [Internet]. APPLIED PHYSICS LETTERS. 2011 ;99( 16): 163108.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3653261
Artigo de periodico
Zero-phonon emission and magnetic polaron parameters in 'EU''TE' (2011)
Henriques, A B ; Galgano, G D
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
HENRIQUES, A B e GALGANO, G D. Zero-phonon emission and magnetic polaron parameters in 'EU''TE'. APPLIED PHYSICS LETTERS, v. 99, n. 9, p. 091906, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3634030. Acesso em: 25 maio 2024.
APA
Henriques, A. B., & Galgano, G. D. (2011). Zero-phonon emission and magnetic polaron parameters in 'EU''TE'. APPLIED PHYSICS LETTERS, 99( 9), 091906. doi:10.1063/1.3634030
NLM
Henriques AB, Galgano GD. Zero-phonon emission and magnetic polaron parameters in 'EU''TE' [Internet]. APPLIED PHYSICS LETTERS. 2011 ; 99( 9): 091906.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3634030
Vancouver
Henriques AB, Galgano GD. Zero-phonon emission and magnetic polaron parameters in 'EU''TE' [Internet]. APPLIED PHYSICS LETTERS. 2011 ; 99( 9): 091906.[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3634030
Artigo de periodico
Design and fabrication of superhydrophobic surfaces formed of microcavities (2010)
Salvadori, M C; Salvadori, M C; Cattani, M; Oliveira, M S; Brown, I G; Teixeira, F S
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: MICROSCÓPIO ELETRÔNICO
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ABNT
SALVADORI, M C et al. Design and fabrication of superhydrophobic surfaces formed of microcavities. APPLIED PHYSICS LETTERS, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3327836. Acesso em: 25 maio 2024.
APA
Salvadori, M. C., Salvadori, M. C., Cattani, M., Oliveira, M. S., Brown, I. G., & Teixeira, F. S. (2010). Design and fabrication of superhydrophobic surfaces formed of microcavities. APPLIED PHYSICS LETTERS. doi:10.1063/1.3327836
NLM
Salvadori MC, Salvadori MC, Cattani M, Oliveira MS, Brown IG, Teixeira FS. Design and fabrication of superhydrophobic surfaces formed of microcavities [Internet]. APPLIED PHYSICS LETTERS. 2010 ;[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3327836
Vancouver
Salvadori MC, Salvadori MC, Cattani M, Oliveira MS, Brown IG, Teixeira FS. Design and fabrication of superhydrophobic surfaces formed of microcavities [Internet]. APPLIED PHYSICS LETTERS. 2010 ;[citado 2024 maio 25 ] Available from: https://doi.org/10.1063/1.3327836

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