Filtros : "EP-PEE" "Brazilian Journal of Physics" "EP" Removidos: "Dias, Eduardo Mario" "ANTAC" Limpar

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  • Source: Brazilian Journal of Physics. Unidades: EP, IQ

    Assunto: DISPOSITIVOS ELETRÔNICOS

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    • ABNT

      SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, v. 29, n. 4, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400028. Acesso em: 05 out. 2024.
    • APA

      Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (1999). Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, 29( 4). doi:10.1590/s0103-97331999000400028
    • NLM

      Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 out. 05 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
    • Vancouver

      Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 out. 05 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
  • Source: Brazilian Journal of Physics. Unidades: IF, EP

    Assunto: FISICA APLICADA

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    • ABNT

      ZHENRUI, yu et al. Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics, v. 27/A, n. 4, p. 105-109, 1997Tradução . . Acesso em: 05 out. 2024.
    • APA

      Zhenrui, yu, Paez Carreño, M. N., Pereyra, I., D`Addio-Fazzio, T. F., & Fantini, M. C. de A. (1997). Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics, 27/A( 4), 105-109.
    • NLM

      Zhenrui yu, Paez Carreño MN, Pereyra I, D`Addio-Fazzio TF, Fantini MC de A. Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics. 1997 ; 27/A( 4): 105-109.[citado 2024 out. 05 ]
    • Vancouver

      Zhenrui yu, Paez Carreño MN, Pereyra I, D`Addio-Fazzio TF, Fantini MC de A. Intrinsic and doped microcrystalline silicon films for application in double barrier structures. Brazilian Journal of Physics. 1997 ; 27/A( 4): 105-109.[citado 2024 out. 05 ]
  • Source: Brazilian Journal of Physics. Unidades: EP, IF

    Assunto: FISICA APLICADA

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    • ABNT

      PEREYRA, Inés et al. Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics, v. 27/A, n. 4, p. 150-153, 1997Tradução . . Acesso em: 05 out. 2024.
    • APA

      Pereyra, I., Paez Carreño, M. N., Prado, R. J., Tabacniks, M. H., & Fantini, M. C. de A. (1997). Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics, 27/A( 4), 150-153.
    • NLM

      Pereyra I, Paez Carreño MN, Prado RJ, Tabacniks MH, Fantini MC de A. Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics. 1997 ; 27/A( 4): 150-153.[citado 2024 out. 05 ]
    • Vancouver

      Pereyra I, Paez Carreño MN, Prado RJ, Tabacniks MH, Fantini MC de A. Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics. 1997 ; 27/A( 4): 150-153.[citado 2024 out. 05 ]

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