Mobility degradation influence on the SOI MOSFET channel length extraction at 77K (1996)
Fonte: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
ABNT
NICOLETT, Aparecido Sirley et al. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 22 ago. 2024.APA
Nicolett, A. S., Simoen, E., Claeys, C., & Martino, J. A. (1996). Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.NLM
Nicolett AS, Simoen E, Claeys C, Martino JA. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 ago. 22 ]Vancouver
Nicolett AS, Simoen E, Claeys C, Martino JA. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 ago. 22 ]