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Artigo de periodico
Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C (2022)
Silva, Vanessa Cristina Pereira da; Leal, João Vitor da Costa; Perina, Welder F; Martino, João Antonio ; Simoen, Eddy ; Veloso, A; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, NANOTECNOLOGIA, BAIXA TEMPERATURA
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ABNT
SILVA, Vanessa Cristina Pereira da et al. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, v. 17, n. 1, p. 1-6, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17il.550. Acesso em: 04 out. 2024.
APA
Silva, V. C. P. da, Leal, J. V. da C., Perina, W. F., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2022). Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, 17( 1), 1-6. doi:10.29292/jics.v17i1.550
NLM
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2024 out. 04 ] Available from: https://doi.org/10.29292/jics.v17il.550
Vancouver
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2024 out. 04 ] Available from: https://doi.org/10.29292/jics.v17il.550
Trabalho de evento
The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures (2012)
Nicoletti, Talitha; Martino, João Antonio ; Santos, S; Almeida, L; Aoulaiche, Marc; Veloso, A; Jurczak, Michael J; Simoen, Eddy ; Claeys, Cor
Source: Proceedings of the conference. Conference titles: International Conference on Ultimate Integration on Silicon. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
NICOLETTI, Talitha et al. The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures. 2012, Anais.. Piscataway: IEEE, 2012. Disponível em: https://doi.org/10.1109/ULIS.2012.6193372. Acesso em: 04 out. 2024.
APA
Nicoletti, T., Martino, J. A., Santos, S., Almeida, L., Aoulaiche, M., Veloso, A., et al. (2012). The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures. In Proceedings of the conference. Piscataway: IEEE. doi:10.1109/ULIS.2012.6193372
NLM
Nicoletti T, Martino JA, Santos S, Almeida L, Aoulaiche M, Veloso A, Jurczak MJ, Simoen E, Claeys C. The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures [Internet]. Proceedings of the conference. 2012 ;[citado 2024 out. 04 ] Available from: https://doi.org/10.1109/ULIS.2012.6193372
Vancouver
Nicoletti T, Martino JA, Santos S, Almeida L, Aoulaiche M, Veloso A, Jurczak MJ, Simoen E, Claeys C. The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures [Internet]. Proceedings of the conference. 2012 ;[citado 2024 out. 04 ] Available from: https://doi.org/10.1109/ULIS.2012.6193372
Trabalho de evento
Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS (2012)
Santos, Sara Dereste dos ; Nicoletti, Talitha; Aoulaiche, Marc; Martino, João Antonio ; Veloso, A; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf. Acesso em: 04 out. 2024.
APA
Santos, S. D. dos, Nicoletti, T., Aoulaiche, M., Martino, J. A., Veloso, A., Jurczak, M., et al. (2012). Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf
NLM
Santos SD dos, Nicoletti T, Aoulaiche M, Martino JA, Veloso A, Jurczak M, Simoen E, Claeys C. Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 04 ] Available from: https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf
Vancouver
Santos SD dos, Nicoletti T, Aoulaiche M, Martino JA, Veloso A, Jurczak M, Simoen E, Claeys C. Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 04 ] Available from: https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf

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