Filtros : "Teodoro, M D" Removido: "Brasil" Limpar

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  • Source: Solar Energy Materials and Solar Cells. Unidade: IF

    Assunto: EPITAXIA POR FEIXE MOLECULAR

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SANTOS, Thales Borrely dos et al. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, v. 254, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.solmat.2023.112281. Acesso em: 13 nov. 2024.
    • APA

      Santos, T. B. dos, Alzeidan, A., Lima, M. D. de, Jacobsen, G. M., Huang, T. Y., Yang, Y. C., et al. (2023). Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, 254. doi:10.1016/j.solmat.2023.112281
    • NLM

      Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281
    • Vancouver

      Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281
  • Source: Micro and Nanostructures. Unidade: IF

    Assunto: POÇOS QUÂNTICOS

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      CANTALICE, Tiago Fernandes de et al. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, v. 172, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.micrna.2022.207449. Acesso em: 13 nov. 2024.
    • APA

      Cantalice, T. F. de, Alzeidan, A., Jacobsen, G. M., Santos, T. B. dos, Teodoro, M. D., & Quivy, A. A. (2022). Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, 172. doi:10.1016/j.micrna.2022.207449
    • NLM

      Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449
    • Vancouver

      Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449

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