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Artigo de periodico
Tunnel-FET evolution and applications for analog circuits (2022)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SENSOR, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-7, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.631. Acesso em: 08 out. 2024.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., Rooyackers, R., & Claeys, C. (2022). Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, 17( 2), 1-7. doi:10.29292/jics.v17i2.631
NLM
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2024 out. 08 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Vancouver
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2024 out. 08 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Trabalho de evento
Influence of interface trap density on vertical NW-TFETs with different source composition (2013)
Martino, João Antonio ; Souza, Felipe Neves; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Vandooren, A.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Influence of interface trap density on vertical NW-TFETs with different source composition. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 08 out. 2024.
APA
Martino, J. A., Souza, F. N., Agopian, P. G. D., Rooyackers, R., Vandooren, A., Simoen, E., & Claeys, C. (2013). Influence of interface trap density on vertical NW-TFETs with different source composition. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 out. 08 ]
Vancouver
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 out. 08 ]
Artigo de periodico
Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs (2010)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Rooyackers, Rita; Collaert, Nadine
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 168-173, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.324. Acesso em: 08 out. 2024.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C., Rooyackers, R., & Collaert, N. (2010). Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, 5( 2), 168-173. doi:10.29292/jics.v5i2.324
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2024 out. 08 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2024 out. 08 ] Available from: https://doi.org/10.29292/jics.v5i2.324

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