Oxygen precipitation in heavy boron-doped cz silicon (1986)
Source: Proceedings. Conference titles: International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon. Unidade: IF
ABNT
STOJANOFF, Vivian et al. Oxygen precipitation in heavy boron-doped cz silicon. 1986, Anais.. Boston: Instituto de Física, Universidade de São Paulo, 1986. . Acesso em: 19 out. 2024.APA
Stojanoff, V., Pimentel, C. A., Bulla, D. A. P., Castro Junior, W. E., Hahn, S., & Ponce, F. A. (1986). Oxygen precipitation in heavy boron-doped cz silicon. In Proceedings. Boston: Instituto de Física, Universidade de São Paulo.NLM
Stojanoff V, Pimentel CA, Bulla DAP, Castro Junior WE, Hahn S, Ponce FA. Oxygen precipitation in heavy boron-doped cz silicon. Proceedings. 1986 ;[citado 2024 out. 19 ]Vancouver
Stojanoff V, Pimentel CA, Bulla DAP, Castro Junior WE, Hahn S, Ponce FA. Oxygen precipitation in heavy boron-doped cz silicon. Proceedings. 1986 ;[citado 2024 out. 19 ]