ReP USP - Resultado da busca

Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 10 nov. 2024.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Growth and characterization of cubic (2005)
Pacheco-Salazar, D G; Li, S F; Cerdeira, F; Meneses, E A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; As, D J; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: CRISTALOGRAFIA, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PACHECO-SALAZAR, D G et al. Growth and characterization of cubic. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 10 nov. 2024.
APA
Pacheco-Salazar, D. G., Li, S. F., Cerdeira, F., Meneses, E. A., Leite, J. R., Scolfaro, L. M. R., et al. (2005). Growth and characterization of cubic. Journal of Crystal Growth, 284( 3-4), 379-387. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 nov. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 nov. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Trabalho de evento-resumo
Optical studies on the incorporation of carbon as a dopant in cubic GaN (2003)
Soares, J A N T; Fernandez, J R L; Cerdeira, F; Brasil, M J S P; Santos, A M; Noriega, Odille Cue; Leite, J. R.; As, Donat Joseph; Köhler, U; Potthast, S; Pacheco-Salazar, D G
Source: Paper SC-MoM7. Conference titles: AVS 50th International Symposium. Unidade: IF
Subjects: VÁCUO, MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOARES, J A N T et al. Optical studies on the incorporation of carbon as a dopant in cubic GaN. 2003, Anais.. New York: AIP, 2003. . Acesso em: 10 nov. 2024.
APA
Soares, J. A. N. T., Fernandez, J. R. L., Cerdeira, F., Brasil, M. J. S. P., Santos, A. M., Noriega, O. C., et al. (2003). Optical studies on the incorporation of carbon as a dopant in cubic GaN. In Paper SC-MoM7. New York: AIP.
NLM
Soares JANT, Fernandez JRL, Cerdeira F, Brasil MJSP, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco-Salazar DG. Optical studies on the incorporation of carbon as a dopant in cubic GaN. Paper SC-MoM7. 2003 ;[citado 2024 nov. 10 ]
Vancouver
Soares JANT, Fernandez JRL, Cerdeira F, Brasil MJSP, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco-Salazar DG. Optical studies on the incorporation of carbon as a dopant in cubic GaN. Paper SC-MoM7. 2003 ;[citado 2024 nov. 10 ]

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