Optical studies on the incorporation of carbon as a dopant in cubic GaN (2003)
- Authors:
- Soares, J A N T
- Fernandez, J R L - Universidade Estadual de Campinas (UNICAMP)
- Cerdeira, F - Universidade Estadual de Campinas (UNICAMP)
- Brasil, M J S P
- Santos, A M
- Noriega, Odille Cue
- Leite, J. R.
- As, Donat Joseph - Universität Paderborn (UP)
- Köhler, U - Universität Paderborn (UP)
- Potthast, S - Universität Paderborn (UP)
- Pacheco-Salazar, D G - Universität Paderborn (UP)
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: VÁCUO; MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Paper SC-MoM7
- Conference titles: AVS 50th International Symposium
-
ABNT
SOARES, J A N T et al. Optical studies on the incorporation of carbon as a dopant in cubic GaN. 2003, Anais.. New York: AIP, 2003. . Acesso em: 10 jan. 2026. -
APA
Soares, J. A. N. T., Fernandez, J. R. L., Cerdeira, F., Brasil, M. J. S. P., Santos, A. M., Noriega, O. C., et al. (2003). Optical studies on the incorporation of carbon as a dopant in cubic GaN. In Paper SC-MoM7. New York: AIP. -
NLM
Soares JANT, Fernandez JRL, Cerdeira F, Brasil MJSP, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco-Salazar DG. Optical studies on the incorporation of carbon as a dopant in cubic GaN. Paper SC-MoM7. 2003 ;[citado 2026 jan. 10 ] -
Vancouver
Soares JANT, Fernandez JRL, Cerdeira F, Brasil MJSP, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco-Salazar DG. Optical studies on the incorporation of carbon as a dopant in cubic GaN. Paper SC-MoM7. 2003 ;[citado 2026 jan. 10 ] - Deep-levels associated to chalcogen impurities in silicon
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- Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon
- Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si
- Dynamical and thermodynamic properties of III-nitrides
- One-electron states induced by 3d transition metal impurities diamond
- Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots
- Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions
- Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N
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