Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N (2000)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Trans Tech Publications
- Publisher place: Zuerich
- Date published: 2000
- Source:
- Título: Materials Science Forum
- Volume/Número/Paginação/Ano: v. 338-342, pt. 2, p. 1595-1598, 2000
- Conference titles: Proceedings of the International Conference on Silicon Carbide and Related Materials
-
ABNT
LEMOS, V et al. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications. . Acesso em: 09 jan. 2026. , 2000 -
APA
Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Frey, T., et al. (2000). Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications. -
NLM
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.[citado 2026 jan. 09 ] -
Vancouver
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.[citado 2026 jan. 09 ] - Deep-levels associated to chalcogen impurities in silicon
- Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'
- 2D-3D transition in a parabolic quantum well
- Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon
- Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si
- Dynamical and thermodynamic properties of III-nitrides
- One-electron states induced by 3d transition metal impurities diamond
- Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots
- Optical studies on the incorporation of carbon as a dopant in cubic GaN
- Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions
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