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Filtros : "Neves, Felipe S" Limpar

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  • Artigo de periodico

    Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016)

    Neves, Felipe S; Agopian, Paula Ghedini Der ; Cretu, B; Rooyackers, Rita; Vandooren, A; Simoen, Eddy ; Thean, Aaron; Martino, João Antonio

    Source: IEEE Transactions on Electron Devices. Unidade: EP

    Assunto: SEMICONDUTORES

    Acesso à fonteDOIHow to cite
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    • ABNT

      NEVES, Felipe S et al. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, v. 63, n. 4, p. 1658-1665, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2533360. Acesso em: 29 abr. 2026.

    • APA

      Neves, F. S., Agopian, P. G. D., Cretu, B., Rooyackers, R., Vandooren, A., Simoen, E., et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63( 4), 1658-1665. doi:10.1109/ted.2016.2533360

    • NLM

      Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2026 abr. 29 ] Available from: https://doi.org/10.1109/ted.2016.2533360

    • Vancouver

      Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2026 abr. 29 ] Available from: https://doi.org/10.1109/ted.2016.2533360

  • Artigo de periodico

    Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism (2015)

    Martino, Márcio Dalla Valle; Thean, Aaron; Claeys, Cor ; Neves, Felipe S; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Vandooren, A; Rooyackers, Rita; Simoen, Eddy

    Source: Solid-State Electronics. Unidade: EP

    Subjects: TRANSISTORES, MICROELETRÔNICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      MARTINO, Márcio Dalla Valle et al. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, v. 112, p. 51-55, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2015.02.006. Acesso em: 29 abr. 2026.

    • APA

      Martino, M. D. V., Thean, A., Claeys, C., Neves, F. S., Agopian, P. G. D., Martino, J. A., et al. (2015). Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, 112, 51-55. doi:10.1016/j.sse.2015.02.006

    • NLM

      Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2026 abr. 29 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006

    • Vancouver

      Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2026 abr. 29 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006
  • 1

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