Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy (1993)
Source: Abstracts. Conference titles: Brazilian School of Semiconductor Physics. Unidade: IFQSC
Assunto: MATÉRIA CONDENSADA
ABNT
GALZERANI, J C et al. Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 01 jun. 2024.APA
Galzerani, J. C., Pizani, P. S., Rossi, J. C., Lubyshev, D. I., & Basmaji, P. (1993). Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. In Abstracts. Sao Carlos: Usp/Ufscar.NLM
Galzerani JC, Pizani PS, Rossi JC, Lubyshev DI, Basmaji P. Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. Abstracts. 1993 ;[citado 2024 jun. 01 ]Vancouver
Galzerani JC, Pizani PS, Rossi JC, Lubyshev DI, Basmaji P. Raman scattering study of 'GA''AS' grown on porous 'SI'by molecular beam epitaxy. Abstracts. 1993 ;[citado 2024 jun. 01 ]