ReP USP - Resultado da busca

Trabalho de evento-resumo
Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates (2021)
Souto, Sérgio Paulo Amaral ; Souza, Daniele de; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Almalki, A.; Alhuwayz, M.; Kazakov, Igor; Klekovkin, Alexey V.; Zinov'ev, Sergey A.; Likhachev, Igor A.; Pashaev, Elkhan. M.; Gobato, Yara Galvao ; Galeti, Helder Vinícius Avanço; Henini, Mohamed
Source: Anais. Conference titles: Encontro de Outono. Unidade: FZEA
Subjects: ESPECTROSCOPIA RAMAN, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUTO, Sérgio Paulo Amaral et al. Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates. 2021, Anais.. São Paulo: Sociedade Brasileira de Fisica, 2021. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2021/sys/resumos/R0630-1.pdf. Acesso em: 03 nov. 2024.
APA
Souto, S. P. A., Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., et al. (2021). Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates. In Anais. São Paulo: Sociedade Brasileira de Fisica. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2021/sys/resumos/R0630-1.pdf
NLM
Souto SPA, Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Almalki A, Alhuwayz M, Kazakov I, Klekovkin AV, Zinov'ev SA, Likhachev IA, Pashaev EM, Gobato YG, Galeti HVA, Henini M. Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates [Internet]. Anais. 2021 ;[citado 2024 nov. 03 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2021/sys/resumos/R0630-1.pdf
Vancouver
Souto SPA, Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Almalki A, Alhuwayz M, Kazakov I, Klekovkin AV, Zinov'ev SA, Likhachev IA, Pashaev EM, Gobato YG, Galeti HVA, Henini M. Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates [Internet]. Anais. 2021 ;[citado 2024 nov. 03 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2021/sys/resumos/R0630-1.pdf
Artigo de periodico
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy (2021)
Alhassan, Sultan; Souza, Daniele de; Alhassni, Amra; Almunyif, Amjad; Alotaibi, Saud; Almalki, Abdulaziz; Alhuwayz, Maryam; Kazakov, Igor P.; Klekovkin, Alexey V.; Tsekhosh, Vladimir I.; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Al Saqri, N.; Galeti, Helder Vinícius Avanço; Al Mashary, Faisal; Albalawi, Hindi; Alwadai, Norah; Henini, Mohamed
Source: Journal of Alloys and Compounds. Unidade: FZEA
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALHASSAN, Sultan et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, p. 1-11, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2021.161019. Acesso em: 03 nov. 2024.
APA
Alhassan, S., Souza, D. de, Alhassni, A., Almunyif, A., Alotaibi, S., Almalki, A., et al. (2021). Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, 885, 1-11. doi:10.1016/j.jallcom.2021.161019
NLM
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019
Vancouver
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019
Artigo de periodico
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates (2021)
Souza, Daniele de; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Albalawi, Hindi; Kazakov, Igor P.; Klekovkin, Alexey V.; ZinovEv, Sergey A; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Galeti, Helder Vinícius Avanço; Henini, Mohamed
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUZA, Daniele de et al. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/abf3d1. Acesso em: 03 nov. 2024.
APA
Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Albalawi, H., et al. (2021). Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 36( 7), 1-12. doi:10.1088/1361-6641/abf3d1
NLM
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Vancouver
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1

USP Schools

ReP

Filtros

Authors

Non normalized affiliation