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Artigo de periodico
Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires (2019)
Piton, Marcelo Rizzo; Koivusalo, Eero; Hakkarainen, Teemu; Galeti, Helder Vinícius Avanço; Rodrigues, Ariano de Giovanni; Talmila, Soile; Souto, Sérgio Paulo Amaral; Lupo, Donald; Gobato, Yara Galvao; Guina, Mircea
Source: Nanotechnology. Unidade: FZEA
Subjects: SEMICONDUTORES, ÓPTICA ELETRÔNICA
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ABNT
PITON, Marcelo Rizzo et al. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, p. 1-11, 2019Tradução . . Disponível em: https://doi.org/10.1088/1361-6528/ab1a97. Acesso em: 09 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Galeti, H. V. A., Rodrigues, A. de G., Talmila, S., et al. (2019). Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, 30( 33), 1-11. doi:10.1088/1361-6528/ab1a97
NLM
Piton MR, Koivusalo E, Hakkarainen T, Galeti HVA, Rodrigues A de G, Talmila S, Souto SPA, Lupo D, Gobato YG, Guina M. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires [Internet]. Nanotechnology. 2019 ; 30( 33): 1-11.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1088/1361-6528/ab1a97
Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Galeti HVA, Rodrigues A de G, Talmila S, Souto SPA, Lupo D, Gobato YG, Guina M. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires [Internet]. Nanotechnology. 2019 ; 30( 33): 1-11.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1088/1361-6528/ab1a97
Artigo de periodico
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Prando, G. A.; Gordo, Vanessa Orsi; Puustinen, J.; Hilska, J.; Alghamdi, H. M.; Som, G; Gunes, M; Akyol, M; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Galeti, Helder Vinícius Avanço; Henini, M; Gobato, Yara Galvao; Guina, Mircea
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: FOTOLUMINESCÊNCIA, EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PRANDO, G. A. et al. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, p. 1-7, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aad02e. Acesso em: 09 nov. 2024.
APA
Prando, G. A., Gordo, V. O., Puustinen, J., Hilska, J., Alghamdi, H. M., Som, G., et al. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33( 8), 1-7. doi:10.1088/1361-6641/aad02e
NLM
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Vancouver
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Trabalho de evento-resumo
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties (2018)
Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Lupo, Donald; Rodrigues, Ariano de Giovanni; Pizani, Paulo Sérgio; Gobato, Yara Galvao; Guina, Mircea
Source: Proceedings. Conference titles: Brazilian MRS Meeting. Unidade: FZEA
Assunto: EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PITON, Marcelo Rizzo et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2018. Disponível em: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf. Acesso em: 09 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Souto, S. P. A., Galeti, H. V. A., Lupo, D., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
NLM
Piton MR, Koivusalo E, Suomalainen S, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Pizani PS, Gobato YG, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings. 2018 ;[citado 2024 nov. 09 ] Available from: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Pizani PS, Gobato YG, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings. 2018 ;[citado 2024 nov. 09 ] Available from: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
Trabalho de evento-resumo
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties (2018)
Gobato, Yara Galvao; Galeti, Helder Vinícius Avanço; Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Hakkarainen, Teemu; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Pizani, Paulo Sérgio; Lupo, Donald; Guina, Mircea
Source: Proceedings ICPS. Conference titles: International Conference on the Physics of Semiconductors. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOBATO, Yara Galvao et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2018. Disponível em: http://www.icps2018.org/en/program/abstract. Acesso em: 09 nov. 2024.
APA
Gobato, Y. G., Galeti, H. V. A., Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings ICPS. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. Recuperado de http://www.icps2018.org/en/program/abstract
NLM
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 nov. 09 ] Available from: http://www.icps2018.org/en/program/abstract
Vancouver
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 nov. 09 ] Available from: http://www.icps2018.org/en/program/abstract

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