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Artigo de periodico
Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs (2004)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Poças, L C; Toginho Filho, D O; Leite, J. R.
Fonte: Brazilian Journal of Physics. Unidade: IF
Assuntos: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
LOURENÇO, S A et al. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000300031. Acesso em: 14 out. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Poças, L. C., Toginho Filho, D. O., & Leite, J. R. (2004). Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000300031
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Poças LC, Toginho Filho DO, Leite JR. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332004000300031
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Poças LC, Toginho Filho DO, Leite JR. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332004000300031
Artigo de periodico
Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells (2002)
Laureto, E; Meneses, E A; Carvalho Junior, W; Bernussi, A A; Ribeiro, E; Silva, Euzi Conceicao Fernandes da; Oliveira, J B B de
Fonte: Brazilian Journal of Physics. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAURETO, E et al. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells. Brazilian Journal of Physics, v. 32, n. 2A, p. 314-317, 2002Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332002000200017. Acesso em: 14 out. 2024.
APA
Laureto, E., Meneses, E. A., Carvalho Junior, W., Bernussi, A. A., Ribeiro, E., Silva, E. C. F. da, & Oliveira, J. B. B. de. (2002). Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells. Brazilian Journal of Physics, 32( 2A), 314-317. doi:10.1590/s0103-97332002000200017
NLM
Laureto E, Meneses EA, Carvalho Junior W, Bernussi AA, Ribeiro E, Silva ECF da, Oliveira JBB de. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 314-317.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332002000200017
Vancouver
Laureto E, Meneses EA, Carvalho Junior W, Bernussi AA, Ribeiro E, Silva ECF da, Oliveira JBB de. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 314-317.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332002000200017
Artigo de periodico
In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy (2002)
Martini, S; Quivy, A. A.
Fonte: Brazilian Journal of Physics. Unidade: IF
Assuntos: FOTOLUMINESCÊNCIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S e QUIVY, A. A. In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy. Brazilian Journal of Physics, v. 32, n. 2A, p. 359-361, 2002Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332002000200031. Acesso em: 14 out. 2024.
APA
Martini, S., & Quivy, A. A. (2002). In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy. Brazilian Journal of Physics, 32( 2A), 359-361. doi:10.1590/s0103-97332002000200031
NLM
Martini S, Quivy AA. In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 359-361.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332002000200031
Vancouver
Martini S, Quivy AA. In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 359-361.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332002000200031
Artigo de periodico
'nipi' delta-doping superlattices for amplitude modulation (2002)
Tribuzy, C V-B; Landi, S M; Pires, M P; Butendeich, R; Souza, P L; Bittencourt, A C; Marques, G E; Henriques, André Bohomoletz
Fonte: Brazilian Journal of Physics. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TRIBUZY, C V-B et al. 'nipi' delta-doping superlattices for amplitude modulation. Brazilian Journal of Physics, v. 32, n. 2A, p. 269-274, 2002Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332002000200006. Acesso em: 14 out. 2024.
APA
Tribuzy, C. V. -B., Landi, S. M., Pires, M. P., Butendeich, R., Souza, P. L., Bittencourt, A. C., et al. (2002). 'nipi' delta-doping superlattices for amplitude modulation. Brazilian Journal of Physics, 32( 2A), 269-274. doi:10.1590/s0103-97332002000200006
NLM
Tribuzy CV-B, Landi SM, Pires MP, Butendeich R, Souza PL, Bittencourt AC, Marques GE, Henriques AB. 'nipi' delta-doping superlattices for amplitude modulation [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 269-274.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332002000200006
Vancouver
Tribuzy CV-B, Landi SM, Pires MP, Butendeich R, Souza PL, Bittencourt AC, Marques GE, Henriques AB. 'nipi' delta-doping superlattices for amplitude modulation [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 269-274.[citado 2024 out. 14 ] Available from: https://doi.org/10.1590/s0103-97332002000200006
Artigo de periodico
Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices (2002)
Hanamoto, L K; Henriques, André Bohomoletz; Tribuzy, C V B; Souza, P L; Yavich, B; Abramof, E
Fonte: Brazilian Journal of Physics. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HANAMOTO, L K et al. Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices. Brazilian Journal of Physics, v. 32, n. 2A, p. 334-337, 2002Tradução . . Disponível em: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf. Acesso em: 14 out. 2024.
APA
Hanamoto, L. K., Henriques, A. B., Tribuzy, C. V. B., Souza, P. L., Yavich, B., & Abramof, E. (2002). Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices. Brazilian Journal of Physics, 32( 2A), 334-337. Recuperado de http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf
NLM
Hanamoto LK, Henriques AB, Tribuzy CVB, Souza PL, Yavich B, Abramof E. Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 334-337.[citado 2024 out. 14 ] Available from: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf
Vancouver
Hanamoto LK, Henriques AB, Tribuzy CVB, Souza PL, Yavich B, Abramof E. Interfacial layers and impurity segregation in InP/'In IND.0.53''Ga IND.0.47'As superlattices [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 334-337.[citado 2024 out. 14 ] Available from: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_334.pdf

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