Source: Journal of the Brazilian Chemical Society. Unidades: IF, EP
Subjects: FÍSICO-QUÍMICA, CRISTALOGRAFIA FÍSICA, ESPECTROSCOPIA RAMAN, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA INFRAVERMELHA, FILMES FINOS
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FORHAN, Neisy Amparo Escobar e FANTINI, Marcia e PEREYRA, Inés. Characterization of Si1-xCx:H thin films deposited by PECVD for SiCOI heterojuntion fabrication. Journal of the Brazilian Chemical Society, v. 17, n. 6, p. 1158-1162, 2006Tradução . . Disponível em: https://doi.org/10.1590/S0103-50532006000600013. Acesso em: 08 nov. 2024.APA
Forhan, N. A. E., Fantini, M., & Pereyra, I. (2006). Characterization of Si1-xCx:H thin films deposited by PECVD for SiCOI heterojuntion fabrication. Journal of the Brazilian Chemical Society, 17( 6), 1158-1162. doi:10.1590/S0103-50532006000600013NLM
Forhan NAE, Fantini M, Pereyra I. Characterization of Si1-xCx:H thin films deposited by PECVD for SiCOI heterojuntion fabrication [Internet]. Journal of the Brazilian Chemical Society. 2006 ; 17( 6): 1158-1162.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1590/S0103-50532006000600013Vancouver
Forhan NAE, Fantini M, Pereyra I. Characterization of Si1-xCx:H thin films deposited by PECVD for SiCOI heterojuntion fabrication [Internet]. Journal of the Brazilian Chemical Society. 2006 ; 17( 6): 1158-1162.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1590/S0103-50532006000600013