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Artigo de periodico
Light interaction with natural photonic crystal from band gap structure to possible light localization phenomena (2022)
Patiño, Claudia Patricia Barrera; Mattos, Vicente Silva; D'Almeida, Camila de Paula; Oliveira, Éverton Lucas de; Oliveira, Lucas Orlandi de; Castro Neto, Jarbas Caiado de ; Bagnato, Vanderlei Salvador
Source: Photonics and Nanostructures. Unidade: IFSC
Subjects: FOTÔNICA, LUZ
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ABNT
PATIÑO, Claudia Patricia Barrera et al. Light interaction with natural photonic crystal from band gap structure to possible light localization phenomena. Photonics and Nanostructures, v. 52, p. 101089-1-101089-11, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.photonics.2022.101089. Acesso em: 05 nov. 2024.
APA
Patiño, C. P. B., Mattos, V. S., D'Almeida, C. de P., Oliveira, É. L. de, Oliveira, L. O. de, Castro Neto, J. C. de, & Bagnato, V. S. (2022). Light interaction with natural photonic crystal from band gap structure to possible light localization phenomena. Photonics and Nanostructures, 52, 101089-1-101089-11. doi:10.1016/j.photonics.2022.101089
NLM
Patiño CPB, Mattos VS, D'Almeida C de P, Oliveira ÉL de, Oliveira LO de, Castro Neto JC de, Bagnato VS. Light interaction with natural photonic crystal from band gap structure to possible light localization phenomena [Internet]. Photonics and Nanostructures. 2022 ; 52 101089-1-101089-11.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/j.photonics.2022.101089
Vancouver
Patiño CPB, Mattos VS, D'Almeida C de P, Oliveira ÉL de, Oliveira LO de, Castro Neto JC de, Bagnato VS. Light interaction with natural photonic crystal from band gap structure to possible light localization phenomena [Internet]. Photonics and Nanostructures. 2022 ; 52 101089-1-101089-11.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/j.photonics.2022.101089
Artigo de periodico
Experimental and theoretical insights into the structural disorder and gas sensing properties of ZnO (2021)
Lima, Bruno Sanches de; Martínez-Alanis, Paulina R.; Güell, Frank; Silva, Weverton Alison dos Santos ; Bernardi, Maria Inês Basso ; Marana, Naiara Letícia; Longo, Elson ; Sambrano, Julio R. ; Mastelaro, Valmor Roberto
Source: ACS Applied Electronic Materials. Unidades: IFSC, EESC
Subjects: ÁGUA, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA
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ABNT
LIMA, Bruno Sanches de et al. Experimental and theoretical insights into the structural disorder and gas sensing properties of ZnO. ACS Applied Electronic Materials, v. 3, n. 3, p. 1447-1457, 2021Tradução . . Disponível em: https://doi.org/10.1021/acsaelm.1c00058. Acesso em: 05 nov. 2024.
APA
Lima, B. S. de, Martínez-Alanis, P. R., Güell, F., Silva, W. A. dos S., Bernardi, M. I. B., Marana, N. L., et al. (2021). Experimental and theoretical insights into the structural disorder and gas sensing properties of ZnO. ACS Applied Electronic Materials, 3( 3), 1447-1457. doi:10.1021/acsaelm.1c00058
NLM
Lima BS de, Martínez-Alanis PR, Güell F, Silva WA dos S, Bernardi MIB, Marana NL, Longo E, Sambrano JR, Mastelaro VR. Experimental and theoretical insights into the structural disorder and gas sensing properties of ZnO [Internet]. ACS Applied Electronic Materials. 2021 ; 3( 3): 1447-1457.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1021/acsaelm.1c00058
Vancouver
Lima BS de, Martínez-Alanis PR, Güell F, Silva WA dos S, Bernardi MIB, Marana NL, Longo E, Sambrano JR, Mastelaro VR. Experimental and theoretical insights into the structural disorder and gas sensing properties of ZnO [Internet]. ACS Applied Electronic Materials. 2021 ; 3( 3): 1447-1457.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1021/acsaelm.1c00058
Artigo de periodico
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates (2021)
Souza, Daniele de; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Albalawi, Hindi; Kazakov, Igor P.; Klekovkin, Alexey V.; ZinovEv, Sergey A; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Galeti, Helder Vinícius Avanço; Henini, Mohamed
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
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ABNT
SOUZA, Daniele de et al. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/abf3d1. Acesso em: 05 nov. 2024.
APA
Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Albalawi, H., et al. (2021). Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 36( 7), 1-12. doi:10.1088/1361-6641/abf3d1
NLM
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Vancouver
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Artigo de periodico
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Prando, G. A.; Gordo, Vanessa Orsi; Puustinen, J.; Hilska, J.; Alghamdi, H. M.; Som, G; Gunes, M; Akyol, M; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Galeti, Helder Vinícius Avanço; Henini, M; Gobato, Yara Galvao; Guina, Mircea
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: FOTOLUMINESCÊNCIA, EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PRANDO, G. A. et al. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, p. 1-7, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aad02e. Acesso em: 05 nov. 2024.
APA
Prando, G. A., Gordo, V. O., Puustinen, J., Hilska, J., Alghamdi, H. M., Som, G., et al. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33( 8), 1-7. doi:10.1088/1361-6641/aad02e
NLM
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Vancouver
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/1361-6641/aad02e

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