ReP USP - Resultado da busca

Trabalho de evento-anais periodico
Valley splitting and g-factor in A1As quantum wells (2009)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf. Acesso em: 14 jun. 2024. , 2009
APA
Duarte, C. A., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
NLM
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Vancouver
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Trabalho de evento-anais periodico
Quantum hall ferromagneti in a double well with vanishing g-factor (2009)
Gomez Armas, Luis Enrique ; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf. Acesso em: 14 jun. 2024. , 2009
APA
Gomez Armas, L. E., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
NLM
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Vancouver
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Trabalho de evento-anais periodico
Magnetoresistance oscillations in double quantum wells under microwave irradiation (2009)
Wiedmann, S; Gusev, Guennadii Michailovich; Raichev, O E; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
WIEDMANN, S et al. Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf. Acesso em: 14 jun. 2024. , 2009
APA
Wiedmann, S., Gusev, G. M., Raichev, O. E., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
NLM
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Vancouver
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Trabalho de evento-anais periodico
Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers (2009)
Diaz, B; Abramof, E; Rappl, P H O; Granado, E; Chitta, Valmir Antonio; Henriques, André Bohomoletz; Oliveira Jr., N. F.
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 14 jun. 2024. , 2009
APA
Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
NLM
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jun. 14 ]
Vancouver
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jun. 14 ]
Trabalho de evento-anais periodico
Magnetic field induced near-band-gap optical properties in EuTe layers (2009)
Hernandez, F G G; Henriques, André Bohomoletz; Rappl, P H O; Abramof, E
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
HERNANDEZ, F G G et al. Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf. Acesso em: 14 jun. 2024. , 2009
APA
Hernandez, F. G. G., Henriques, A. B., Rappl, P. H. O., & Abramof, E. (2009). Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
NLM
Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
Vancouver
Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
Trabalho de evento-anais periodico
Magneto-optical absorption and photomagnetism in Europium chalcogenides (2009)
Henriques, André Bohomoletz; Abramof, E
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HENRIQUES, André Bohomoletz e ABRAMOF, E. Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf. Acesso em: 14 jun. 2024. , 2009
APA
Henriques, A. B., & Abramof, E. (2009). Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
NLM
Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
Vancouver
Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
Trabalho de evento-anais periodico
Transport in a bilayer system at high Landau filling factor (2009)
Gusev, G M
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
GUSEV, G M. Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf. Acesso em: 14 jun. 2024. , 2009
APA
Gusev, G. M. (2009). Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
NLM
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
Vancouver
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 jun. 14 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
Artigo de periodico
Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd) (1999)
Liang, G.; Yi, Y.; Jardim, R. F.; Wang, L. V.
Source: International Journal of Modern Physics B. Unidade: IF
Assunto: FÍSICA
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ABNT
LIANG, G. et al. Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B, v. 13, n. 29, p. 3750-3754, 1999Tradução . . Acesso em: 14 jun. 2024.
APA
Liang, G., Yi, Y., Jardim, R. F., & Wang, L. V. (1999). Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B, 13( 29), 3750-3754.
NLM
Liang G, Yi Y, Jardim RF, Wang LV. Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B. 1999 ; 13( 29): 3750-3754.[citado 2024 jun. 14 ]
Vancouver
Liang G, Yi Y, Jardim RF, Wang LV. Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B. 1999 ; 13( 29): 3750-3754.[citado 2024 jun. 14 ]
Artigo de periodico
Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface (1999)
Baierle, Rogerio Jose; Caldas, Marilia Junqueira
Source: International Journal of Modern Physics B. Unidade: IF
Subjects: FÍSICA, INTERFACE
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ABNT
BAIERLE, Rogerio Jose e CALDAS, Marilia Junqueira. Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B, v. 13, n. 21-22, p. 2733-2757, 1999Tradução . . Acesso em: 14 jun. 2024.
APA
Baierle, R. J., & Caldas, M. J. (1999). Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B, 13( 21-22), 2733-2757.
NLM
Baierle RJ, Caldas MJ. Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B. 1999 ; 13( 21-22): 2733-2757.[citado 2024 jun. 14 ]
Vancouver
Baierle RJ, Caldas MJ. Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B. 1999 ; 13( 21-22): 2733-2757.[citado 2024 jun. 14 ]
Artigo de periodico
Electronic properties of copper-3d transition-metal pairs in silicon (1999)
Justo Filho, João Francisco ; Assali, L. V. C.
Source: International Journal of Modern Physics B. Unidade: IF
Assunto: FÍSICA
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ABNT
JUSTO FILHO, João Francisco e ASSALI, L. V. C. Electronic properties of copper-3d transition-metal pairs in silicon. International Journal of Modern Physics B, v. 13, n. 18, 1999Tradução . . Disponível em: https://doi.org/10.1142/S0217979299002472. Acesso em: 14 jun. 2024.
APA
Justo Filho, J. F., & Assali, L. V. C. (1999). Electronic properties of copper-3d transition-metal pairs in silicon. International Journal of Modern Physics B, 13( 18). doi:10.1142/S0217979299002472
NLM
Justo Filho JF, Assali LVC. Electronic properties of copper-3d transition-metal pairs in silicon [Internet]. International Journal of Modern Physics B. 1999 ; 13( 18):[citado 2024 jun. 14 ] Available from: https://doi.org/10.1142/S0217979299002472
Vancouver
Justo Filho JF, Assali LVC. Electronic properties of copper-3d transition-metal pairs in silicon [Internet]. International Journal of Modern Physics B. 1999 ; 13( 18):[citado 2024 jun. 14 ] Available from: https://doi.org/10.1142/S0217979299002472
Artigo de periodico
Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields (1997)
Takahashi, E K; Lino, A T; Scólfaro, Luisa Maria Ribeiro
Source: International Journal of Modern Physics B. Unidade: IF
Assunto: FÍSICA
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ABNT
TAKAHASHI, E K e LINO, A T e SCÓLFARO, Luisa Maria Ribeiro. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, v. 11, n. 9, p. 1195-1207, 1997Tradução . . Acesso em: 14 jun. 2024.
APA
Takahashi, E. K., Lino, A. T., & Scólfaro, L. M. R. (1997). Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, 11( 9), 1195-1207.
NLM
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 jun. 14 ]
Vancouver
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 jun. 14 ]

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